A multilayer ceramic capacitor includes a body a first internal electrode and a second internal electrode disposed with a dielectric layer interposed therebetween, a first connecting electrode connected to the first internal electrode through the body, a second connecting electrode connected to the second internal electrode through the body, a first external electrode disposed on one surface of the body and connected to the first connecting electrode, and a second external electrode disposed on one surface of the body, spaced apart from the first external electrode, and connected to the second connecting electrode, wherein the first and second external electrodes each include a first electrode layer disposed on the body and including ceramics, and a second electrode layer disposed on the first electrode layer and having the content of ceramics smaller than that of the first electrode layer.

A multilayer ceramic capacitor includes a body a first internal electrode and a second internal electrode disposed with a dielectric layer interposed therebetween, a first connecting electrode connected to the first internal electrode through the body, a second connecting electrode connected to the second internal electrode through the body, a first external electrode disposed on one surface of the body and connected to the first connecting electrode, and a second external electrode disposed on one surface of the body, spaced apart from the first external electrode, and connected to the second connecting electrode, wherein the first and second external electrodes each include a first electrode layer disposed on the body and including ceramics, and a second electrode layer disposed on the first electrode layer and having the content of ceramics smaller than that of the first electrode layer.

Methods for fabricating a structure that includes a metal-insulator-metal (MIM) capacitor and structures that include a MIM capacitor. The MIM capacitor includes a layer stack with a first electrode, a second electrode, and a third electrode. The layer stack includes a pilot opening extending at least partially through at least one of the first electrode, the second electrode, and the third electrode. A dielectric layer is arranged over the metal-insulator-metal capacitor, and includes a via opening extending vertically to the pilot opening. A via is arranged in the via opening and the pilot opening. The pilot opening has a cross-sectional area that is less than a cross-sectional area of the via opening.

Methods for fabricating a structure that includes a metal-insulator-metal (MIM) capacitor and structures that include a MIM capacitor. The MIM capacitor includes a layer stack with a first electrode, a second electrode, and a third electrode. The layer stack includes a pilot opening extending at least partially through at least one of the first electrode, the second electrode, and the third electrode. A dielectric layer is arranged over the metal-insulator-metal capacitor, and includes a via opening extending vertically to the pilot opening. A via is arranged in the via opening and the pilot opening. The pilot opening has a cross-sectional area that is less than a cross-sectional area of the via opening.

A multilayer capacitor includes an element, a first external electrode, a second external electrode, and a plurality of internal electrodes. The plurality of internal electrodes include first internal electrodes, second internal electrodes, and a plurality of third internal electrodes. The plurality of third internal electrodes are electrically connected by a connection conductor. First capacity parts are constituted of the first internal electrodes and the third internal electrodes, and second capacity parts are constituted of the second internal electrodes and the third internal electrodes. The first capacity part and the second capacity part are electrically connected in series, and the connection conductor is disposed on at least one of the three lateral surfaces other than the lateral surface that is a mounting surface, among the four lateral surfaces.

In a thin-film capacitor, an electrode terminal layer and an electrode layer of a capacitor portion are connected to electrode terminals by via conductors that is formed to penetrate an insulating layer in a thickness direction thereof, and a short circuit wiring in the thickness direction is realized by the via conductors. In the thin-film capacitor, an increase in the number of terminals in the plurality of electrode terminals is achieved, a decrease in length of a circuit wiring is achieved, and thus a thin-film capacitor with low-ESL has been achieved.

In a thin-film capacitor, an electrode terminal layer and an electrode layer of a capacitor portion are connected to electrode terminals by via conductors that is formed to penetrate an insulating layer in a thickness direction thereof, and a short circuit wiring in the thickness direction is realized by the via conductors. In the thin-film capacitor, an increase in the number of terminals in the plurality of electrode terminals is achieved, a decrease in length of a circuit wiring is achieved, and thus a thin-film capacitor with low-ESL has been achieved.

To provide electronic component in which bonding strength between external electrode and plating layer and bonding strength between external electrode and internal conductor can be increased. Electronic component according to present disclosure includes element body, interlayer connection conductor provided inside element body so as to extend to main surface of element body, external electrode formed on main surface of element body so as to cover interlayer connection conductor, and plating layer covering external electrode. Plating layer includes impregnation part that is impregnated into interlayer connection conductor.

To provide electronic component in which bonding strength between external electrode and plating layer and bonding strength between external electrode and internal conductor can be increased. Electronic component according to present disclosure includes element body, interlayer connection conductor provided inside element body so as to extend to main surface of element body, external electrode formed on main surface of element body so as to cover interlayer connection conductor, and plating layer covering external electrode. Plating layer includes impregnation part that is impregnated into interlayer connection conductor.

An electronic component that includes: a semiconductor substrate; an insulator layer on the semiconductor substrate; a lower electrode and an upper electrode that face the semiconductor substrate across the insulator layer; and a dielectric layer facing the semiconductor substrate across the insulator layer. The lower electrode, the upper electrode, and the dielectric layer configure a passive component. The insulator layer includes a conduction path passing through the insulator layer and electrically connecting the lower electrode and the semiconductor substrate.