A doped organic semiconductor is produced using the method of providing an organic semiconductor solution, contacting the organic semiconductor solution with CO.sub.2; and irradiating the organic semiconductor solution with ultraviolet light. A composition is described, the composition comprising an organic semiconductor; and a metal salt having the formula M.sup.+X.sup.− wherein X.sup.− is a monoanionic species; and wherein the ratio of M.sup.+ to X.sup.− in the hole transport material is less than about 1.00. An additional composition is described, the composition comprising an organic semiconductor; a metal salt having the formula M.sup.+X.sup.− wherein X.sup.− is a monoanionic species; and a metal carbonate; wherein the total metal content of the composition is approximately equal to the X.sup.− content of the composition.

A device includes a first substrate, a silicon layer supported by the first substrate, and an active glass layer with a layer including a crystal material with a chemical formula ABX.sub.3 supported by a glass substrate. The active glass layer is stacked on the first substrate such that the layer including the crystal material with a chemical formula ABX.sub.3 and silicon layer are arranged between the first substrate and the glass substrate.

The present disclosure relates to a photovoltaic (PV) device that includes a color-conversion layer that includes at least one of a color-tuning layer and/or an intermediate layer and a photovoltaic layer where the color-conversion layer changes the appearance of the PV device when compared to a similar PV device constructed without the color-conversion layer, the color-conversion layer increases a power output of the PV device by at least one of reflecting light to the PV layer or emitting light which is redirected to the PV layer, and the device is at least partially transparent to light in the visible spectrum.

An electronic device, such as, without limitation, a perovskite solar cell or a light emitting diode, includes an assembly including at least one electronic portion or component, and a composite coating layer covering at least part of the assembly including the at least one electronic portion or component. The composite coating layer includes a polymer material, such as, without limitation, PMMA or PMMA-PU, having nanoparticles, such as, without limitation, reduced graphene oxide or SiO.sub.2, embedded therein. The electronic device may further include a second coating layer including a second polymer material (such as, without limitation, PMMA or PMMA-PU without nanoparticles) positioned between the coating layer and the assembly.

The present disclosure may provide semiconductor perovskite layers and method of making thereof. In some cases, the perovskite layer may comprise a composition of MA.sub.n1FA.sub.n2Cs.sub.n3PbX.sub.3. MA may be methylammonium, FA may be formamidinium, n1, n2, and n3 may independently be greater than 0 and less than 1, and n1 + n2 + n3 may equal 1.

The present inventive concept relates to a method of manufacturing a thin film of a perovskite compound, including a process of reacting at least one compound selected from among an amine-based compound and an amidine-based compound, an organic metal compound including a divalent positive ion, and at least one hydrogen halide, and a method of manufacturing a solar cell using the same, and

According to the present inventive concept, because a perovskite compound is manufactured by performing a reaction through a chemical vapor deposition (CVD) process and an atomic layer deposition (ALD) process, step coverage may be enhanced, and thus, it may be possible to form a thin film having a uniform thickness and a problem where a solvent remains may also be solved.

A solar cell according to the present disclosure includes a first electrode, a second electrode, a photoelectric conversion layer located between the first electrode and the second electrode, and a semiconductor layer located between the first electrode and the photoelectric conversion layer, in which at least one selected from the group consisting of the first electrode and the second electrode is translucent, and the semiconductor layer contains a compound containing Na, Zn, and O.

A semi-translucent photovoltaic device is described having a translucent substrate with a photovoltaic stack interrupted in spatially distributed openings filled with a translucent polymer. Also disclosed is a method of manufacturing the device. The method comprises providing the substrate at a first side with the photovoltaic stack; removing material from the stack in spatially distributed regions, therewith forming openings within these regions; blanket-wise depositing a protective layer over the substrate with the photovoltaic stack; blanket-wise depositing a layer of a radiation-curable precursor for the translucent polymer over the protective layer; irradiating the substrate from a second side opposite its first side to therewith selectively cure the radiation-curable precursor within and in front of the spatially distributed openings, the radiation-curable precursor being converted therewith into said translucent polymer; removing an uncured remainder of the layer of the radiation-curable precursor.

Disclosed are a solar cell cutting and passivation integrated processing method and a solar cell prepared using the method. The solar cell includes a substrate (1), a front electrode layer (2), a light absorption layer (3) and a back electrode layer (4) from bottom to top. Before laser structured cutting is performed for the back electrode layer (4), a protective layer (5) is disposed on a surface of the back electrode layer (4), and then laser structured cutting is performed for the back electrode layer (4), or the back electrode layer (4) and the light absorption layer (3) simultaneously through the protective layer (5) to obtain a corresponding structured trench (P3) while the protective layer (5) is kept from being cut by laser, and a material of the protective layer (5) is partially molten due to a localized high temperature generated by the laser processing in a laser structured cutting process and infiltrates into an underlying corresponding structured trench (P3). In this method, at the time of performing laser cutting processing, passivation is performed for newly-processed trench at the same time, reducing production costs, saving processing time. Further, the trench edges after cutting are repaired to improve the morphology of the processed trench, improving the stability of the cell and extending the service life of the cell.

In accordance with a method of forming a halide perovskite thin film, a first halide perovskite material is chosen from which a halide perovskite thin film is to be formed. An epitaxial substrate formed from a second halide perovskite material is also chosen. The halide perovskite thin film is epitaxially formed on the substrate from the first halide perovskite material. The substrate is chosen such that the halide perovskite thin film formed on the substrate has a selected value of at least one property. The property is selected from the group including crystal structure stability, charge carrier mobility and band gap.