A method for preparing a biological material for implanting provides irradiating at least a portion of the surface of the material with an accelerated Neutral Beam.

A method for preparing a biological material for implanting provides irradiating at least a portion of the surface of the material with an accelerated Neutral Beam.

A beam control method is provided that can be implemented with any hardware system for imaging and/or cutting such as SEM/FIB/HIM or charged particle lithography which alleviates the deposited energy overlap between pixels to increase resolution and precision while reducing damage. The method includes scanning a workpiece with e-beam lithography, proton lithography, ion beam lithography, optical lithography, ion beam imaging or FIB in a reduced or sub-sampled pattern, to reduce beam overlap, which can include the step of scanning the beam ensuring that there is the largest difference in time and space between consecutive beam locations.

Electrostatic mirror chromatic aberration (Cc) correctors, according to the present disclosure, comprise an electrostatic electron mirror that itself comprises a multipole. The electrostatic electron mirror is positioned within the corrector such that, when the corrector is in use, an electron beam passing through the corrector is not incident on the electrostatic electron mirror along the optical axis of the mirror. The mirror object distance of the electrostatic mirror is equal to the mirror image distance of the electrostatic mirror, and the electrostatic mirror is configured such that the electrostatic mirror applies no dispersion or coma aberration to the electron beam. The multipole is positioned in the mirror plane of the electrostatic electron mirror, and in some embodiments the multipole is a quadrupole.

An observation apparatus and method that avoids drawbacks of a Lorentz method and observes a weak scatterer or a phase object with in-focus, high resolution, and no azimuth dependency, by a Foucault method observation using a hollow-cone illumination that orbits and illuminates an incident electron beam having a predetermined inclination angle, an electron wave is converged at a position (height) of an aperture plate downstream of a sample, and a bright field condition in which a direct transmitted electron wave of the sample passes through the aperture plate, a dark field condition in which the transmitted electron wave is shielded, and a Schlieren condition in which approximately half of the transmitted wave is shielded as a boundary condition of both of the above conditions are controlled, and a spatial resolution of the observation image is controlled by selecting multiple diameters and shapes of the opening of the aperture plate.

An observation apparatus and method that avoids drawbacks of a Lorentz method and observes a weak scatterer or a phase object with in-focus, high resolution, and no azimuth dependency, by a Foucault method observation using a hollow-cone illumination that orbits and illuminates an incident electron beam having a predetermined inclination angle, an electron wave is converged at a position (height) of an aperture plate downstream of a sample, and a bright field condition in which a direct transmitted electron wave of the sample passes through the aperture plate, a dark field condition in which the transmitted electron wave is shielded, and a Schlieren condition in which approximately half of the transmitted wave is shielded as a boundary condition of both of the above conditions are controlled, and a spatial resolution of the observation image is controlled by selecting multiple diameters and shapes of the opening of the aperture plate.

The present invention relates to a method of forming a plasma resistant oxyfluoride coating layer, including: mounting a substrate on a substrate holder provided in a chamber; causing an electron beam scanned from an electron gun to be incident on an oxide evaporation source accommodated in a first crucible, and heating, melting, and vaporizing the oxide evaporation source as the electron beam is incident on the oxide evaporation source; vaporizing a fluoride accommodated in a second crucible; and advancing an evaporation gas generated from the oxide evaporation source and a fluorine-containing gas generated from the fluoride toward the substrate, and reacting the evaporation gas generated from the oxide evaporation source and the fluorine-containing gas generated from the fluoride to deposit an oxyfluoride on the substrate. According to the present invention, it is possible to form a dense and stable oxyfluoride coating layer having excellent plasma resistance, suppressed generation of contaminant particles, and no cracks.

The present disclosure relates generally to ion implantation, and more particularly, to systems and processes for adjusting a ribbon beam angle of an ion implantation system. An exemplary ion implantation system includes an ion source configured to generate a ribbon beam, a wafer chuck configured to hold a wafer during implantation by the ribbon beam, a dipole magnet disposed between the ion source and the wafer chuck, and a controller. The dipole magnet includes at least two coils configured to adjust a ribbon beam angle of the ribbon beam at one or more locations along a path of the ribbon beam between the ion source and the wafer held in the wafer chuck. The controller is configured to control the ion source, the wafer chuck, and the dipole magnet.

A particle beam system includes: a multi-beam particle source configured to generate a multiplicity of particle beams; an imaging optical unit configured to image an object plane in particle-optical fashion into an image plane and direct the multiplicity of particle beams on the image plane; and a field generating arrangement configured to generate electric and/or magnetic deflection fields of adjustable strength in regions close to the object plane. The particle beams are deflected in operation by the deflection fields through deflection angles that depend on the strength of the deflection fields.

A multi-beam apparatus for observing a sample with high resolution and high throughput is proposed. In the apparatus, a source-conversion unit forms plural and parallel images of one single electron source by deflecting plural beamlets of a parallel primary-electron beam therefrom, and one objective lens focuses the plural deflected beamlets onto a sample surface and forms plural probe spots thereon. A movable condenser lens is used to collimate the primary-electron beam and vary the currents of the plural probe spots, a pre-beamlet-forming means weakens the Coulomb effect of the primary-electron beam, and the source-conversion unit minimizes the sizes of the plural probe spots by minimizing and compensating the off-axis aberrations of the objective lens and condenser lens.