Patent classifications
H01L23/041
Semiconductor device
A semiconductor device according to the present invention includes: a substrate; a heat generating portion provided on the substrate; a cap substrate provided above the substrate so that a hollow portion is provided between the substrate and the cap substrate; and a reflection film provided above the heat generating portion and reflecting a medium wavelength infrared ray. The reflection film reflects the infrared ray radiated to the cap substrate side through the hollow portion due to the temperature increase of the heat generating portion, so that the temperature increase of the cap substrate side can be suppressed. Because of this function, even if mold resin is provided on the cap substrate, increase of the temperature of the mold resin can be suppressed.
SEMICONDUCTOR PACKAGE
A semiconductor package includes a support frame, and including a cavity, a semiconductor chip disposed in the cavity and having an active surface on which contact pads are arranged, and a connection member on the support frame and on the active surface of the semiconductor chip. The semiconductor chip includes a first insulating film disposed on the active surface and exposing the contact pads, a second insulating film disposed on the first insulating film and including a first opening exposing connection regions of the contact pads, and a conductive crack preventing layer disposed on the connection regions and having an outer peripheral region extending to a portion of the second insulating film around the first opening. The connection member includes an insulating layer including a second opening exposing the connection regions; and a redistribution layer connected to the contact pads through the second opening.
SUBSTRATE BONDING STRUCTURE AND SUBSTRATE BONDING METHOD
A device (2) is formed on a main surface of a substrate (1). The main surface of the substrate (1) is bonded to the undersurface of the counter substrate (14) via the bonding member (11,12,13) in a hollow state. A circuit (17) and a bump structure (26) are formed on the top surface of the counter substrate (14). The bump structure (26) is positioned in a region corresponding to at least the bonding member (11,12,13), and has a higher height than that of the circuit (17).
Power semiconductor module with heat dissipation plate
An object of the present invention is to provide a structure, particularly, a power semiconductor module, which suppresses a bypass flow of a cooling medium and improves cooling efficiency. A structure according to the present invention includes a heat dissipation plate thermally connected to a heating element, and a resin region having a resin material that fixes the heating element and the heat dissipation plate, wherein the heat dissipation plate includes a fin portion including a plurality of fins protruding from a heat dissipation surface of the heat dissipation plate and formed to be exposed from the sealing resin material, and a wall portion formed to protrude from the heat dissipation surface to a same side as the fin and which separates the fin portion and the resin region.
Semiconductor package
A semiconductor package includes a semiconductor chip including a body, a connection pad, a passivation film, a first connection bump disposed, and a first coating layer; an encapsulant covering at least a portion of the semiconductor chip; and a connection structure including an insulating layer, a redistribution layer, and a connection via. The first connection bump includes a low melting point metal, the redistribution layer and the connection via include a conductive material, and the low melting point metal has a melting point lower than a melting point of the conductive material.
Low stress integrated device packages
An integrated device package is disclosed. The integrated device package can include a packaging structure defining a cavity. An integrated device die can be disposed at least partially within the cavity. A gel can be disposed within the cavity surrounding the integrated device. A portion of the gel can be disposed between a lower surface of the integrated device die and an upper surface of the packaging structure within the cavity.
TIM strain mitigation in electronic modules
A heat spreading lid, including a lid body, a wing portion, where the wing portion flexibly moves independently from the lid body.
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A semiconductor device includes: a semiconductor chip; a case storing the semiconductor chip; a wire bonded to the semiconductor chip; a cover fixed inside the case and including a concave portion disposed above the semiconductor chip and the wire; and a sealing resin potted inside the case and sealing the semiconductor chip, the wire and the cover, wherein the sealing resin is not filled in the concave portion so that a cavity is provided.
Packaged power device having improved heat dissipation capacity and better thermal performances
A packaged device, having a package, including a first dissipative region, a second dissipative region, a first connection element and a second connection element. A die of semiconductor material is arranged within the package, carried by the first dissipative region. The first and second dissipative regions extend at a distance from each other, and the first and second connection elements extend at a distance from each other between the first and second dissipative regions. The first dissipative region, the second dissipative region, the first connection element, and the second connection element are hollow and form a circuit containing a cooling liquid.
Semiconductor package
A semiconductor package includes a support frame, and including a cavity, a semiconductor chip disposed in the cavity and having an active surface on which contact pads are arranged, and a connection member on the support frame and on the active surface of the semiconductor chip. The semiconductor chip includes a first insulating film disposed on the active surface and exposing the contact pads, a second insulating film disposed on the first insulating film and including a first opening exposing connection regions of the contact pads, and a conductive crack preventing layer disposed on the connection regions and having an outer peripheral region extending to a portion of the second insulating film around the first opening. The connection member includes an insulating layer including a second opening exposing the connection regions; and a redistribution layer connected to the contact pads through the second opening.