H01L23/053

POWER SEMICONDUCTOR MODULE HAVING PROTRUSIONS AS FIXING STRUCTURES
20220415730 · 2022-12-29 ·

A power semiconductor module includes: an electrically insulative frame having opposite first and second mounting sides, and a border that defines a periphery of the electrically insulative frame; a first substrate seated in the electrically insulative frame; a plurality of power semiconductor dies attached to the first substrate; a plurality of signal pins attached to the first substrate and electrically connected to the power semiconductor dies; a plurality of busbars attached to the first substrate and extending through the border of the electrically insulative frame; a plurality of fixing positions at the first mounting side of the electrically insulative frame; and a plurality of electrically insulative protrusions jutting out from the second mounting side of the electrically insulative frame, wherein the protrusions are vertically aligned with the fixing positions. Methods of producing the power semiconductor module and power electronic assemblies that incorporate the power semiconductor module are also described.

SEMICONDUCTOR PACKAGING

Disclosed is a semiconductor packaging. The semiconductor packing comprises a substrate on which a semiconductor device is arranged on a front surface; a channel member disposed on a rear surface of the substrate and forming a cooling flow path through which a refrigerant moves; and a porous diamond layer covering an outer surface of the channel member.

SEMICONDUCTOR PACKAGING

Disclosed is a semiconductor packaging. The semiconductor packing comprises a substrate on which a semiconductor device is arranged on a front surface; a channel member disposed on a rear surface of the substrate and forming a cooling flow path through which a refrigerant moves; and a porous diamond layer covering an outer surface of the channel member.

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
20220415749 · 2022-12-29 · ·

A semiconductor device includes a baseplate and a case which includes an external wall surrounding an internal space and a dividing wall extending in a first direction and separating the space into compartments. The dividing wall has a lower end fixed to the principal surface and includes, on a sidewall, a terrace positioned further away from the principal surface than the lower end and hanging out toward the space compared to the lower end in a second direction parallel to the principal surface and perpendicular to the first direction. A terminal's bonding part, to which a wire is bonded, is disposed on the terrace. A ratio of the wire's diameter to the bonding part's width in the first direction is set to ≤0.15, which prevents a situation where bonding power is not sufficiently applied to the bonding part during ultrasonic bonding of the wire, thus increasing the bonding strength.

SEMICONDUCTOR MODULE

There is provided a semiconductor module capable of preventing the peeling of a sealing resin on the side where connection sections used for the connection to semiconductor elements are arranged. A semiconductor module includes: an outer frame; sealing resins; gate signal output terminals, and partition sections laid across the outer flame to partition a space into a plurality of housing sections, in the partition sections which the gate signal output terminals with connection sections exposed are arranged. The partition sections have first surface sections on the side where the connection sections are arranged and second surface sections formed, on the side where the connection sections are not arranged, such that the peeling strength to the sealing resins is lower than that of the first surface sections.

LID, ELECTRONIC COMPONENT-HOUSING PACKAGE, AND ELECTRONIC DEVICE
20220406727 · 2022-12-22 · ·

Provided is a lid of an electronic component-housing package. The lid includes a conductor layer and a dielectric layer. The conductor layer includes at least one opening and a first part surrounding the at least one opening. The dielectric layer includes a second part, a first dielectric layer, and a second dielectric layer. The second part is located in the at least one opening. The first dielectric layer lies on the top of the conductor layer. The second part lies on the underside of the conductor layer.

PRESSING DEVICE FOR DIRECTLY OR INDIRECTLY APPLYING PRESSURE TO POWER-SEMICONDUCTOR COMPONENTS OF A POWER-SEMICONDUCTOR MODULE
20220406674 · 2022-12-22 ·

A pressing device for indirectly or directly applying pressure to power-semiconductor components of a power-semiconductor module, having a pressing plate, having a pressing nub element which is formed from an elastic material and which has a pressing nub plate and pressing nubs projecting therefrom, and having a receiving device for receiving the pressing nub element, which receiving device has a base plate provided with recesses, wherein the recesses run through the base plate, wherein the pressing nub plate is arranged on the base plate and the pressing nubs run through the recesses and, on the main side of the base plate facing away from the pressing nub plate, project beyond this main side of the base plate, and wherein the pressing nub plate is arranged between the pressing plate and the base plate.

PACKAGE ASSEMBLY INCLUDING LIQUID ALLOY THERMAL INTERFACE MATERIAL AND METHODS OF FORMING THE SAME

A package assembly includes an interposer module on a package substrate, a liquid alloy thermal interface material (TIM) on the interposer module, a seal ring surrounding the liquid alloy TIM, and a package lid on the liquid alloy TIM and seal ring, wherein the seal ring, interposer module and package lid seal the liquid alloy TIM.

PACKAGE ASSEMBLY INCLUDING LIQUID ALLOY THERMAL INTERFACE MATERIAL AND METHODS OF FORMING THE SAME

A package assembly includes an interposer module on a package substrate, a liquid alloy thermal interface material (TIM) on the interposer module, a seal ring surrounding the liquid alloy TIM, and a package lid on the liquid alloy TIM and seal ring, wherein the seal ring, interposer module and package lid seal the liquid alloy TIM.

Power semiconductor module and a method for producing a power semiconductor module

A method for producing a power semiconductor module arrangement includes: arranging a semiconductor substrate in a housing, the housing including a through hole extending through a component of the housing; inserting a pin or bolt into the through hole such that an upper end of the pin/bolt is not inserted into the through hole; arranging a printed circuit board on the housing; arranging the housing on a heat sink having a hole, the housing being arranged on the heat sink such that the through hole is aligned with the hole in the heat sink; and by way of a first pressing tool, exerting a force on a defined contact area of the printed circuit board and pressing the pin/bolt into the hole in the heat sink, wherein the defined contact area is arranged directly above the pin/bolt.