A semiconductor device has a resistance element including a metal block, a resin layer disposed on the metal block, and a resistance film disposed on the resin layer and an insulated circuit board including an insulating plate and a circuit pattern disposed on the insulating plate and having a bonding area on a front surface thereof to which a back surface of the metal block of the resistance element is bonded. The area of the circuit pattern is larger in plan view than that of a front surface of the resistance element. The metal block has a thickness greater than that of the circuit pattern in a direction orthogonal to the back surface of the metal block. As a result, the metal block properly conducts heat generated by the resistance film of the resistance element to the circuit pattern.

An electronic device having a unitary housing is disclosed. The device can include a first housing component having an open cavity, an internal electronic part disposed within the cavity, a second housing component disposed across the cavity, and a support feature disposed within the cavity and arranged to support the second housing component. The first housing component can be formed from metal, while the second housing component can be formed from a plurality of laminated foil metal layers. The second housing component can be attached to the first housing component via one or more ultrasonic welds, such that a fully enclosed housing is created. The fully enclosed housing can be hermetically sealed, and the outside surfaces thereof can be machined or otherwise finished after the ultrasonic welding.

An electronic device having a unitary housing is disclosed. The device can include a first housing component having an open cavity, an internal electronic part disposed within the cavity, a second housing component disposed across the cavity, and a support feature disposed within the cavity and arranged to support the second housing component. The first housing component can be formed from metal, while the second housing component can be formed from a plurality of laminated foil metal layers. The second housing component can be attached to the first housing component via one or more ultrasonic welds, such that a fully enclosed housing is created. The fully enclosed housing can be hermetically sealed, and the outside surfaces thereof can be machined or otherwise finished after the ultrasonic welding.

According to one embodiment, a ceramic metal circuit board is a ceramic metal circuit board formed by bonding metal circuit plates to at least one surface of a ceramic substrate. At least one of the metal circuit plates has an area of not less than 100 mm.sup.2 and includes a concave portion having a depth of not less than 0.02 mm within a range of 1% to 70% of a surface of the at least one of the metal circuit plates. The concave portion is provided not less than 3 mm inside from an end of the metal circuit plate.

A semiconductor package including at least one functional die; at least one dummy die free of active circuit, wherein the dummy die comprises at least one metal-insulator-metal (MIM) capacitor; and a redistribution layer (RDL) structure interconnecting the MIM capacitor to the at least one functional die.

A semiconductor package including a lid having one or more heat pipes located on and/or within the lid to provide improved thermal management. A lid for a semiconductor package having one or more heat pipes thermally integrated with the lid may provide more uniform heat loss from the semiconductor package, reduce the risk of damage to the package due to excessive heat accumulation, and may enable the lid to be fabricated using less expensive materials, thereby reducing the costs of a semiconductor package.

A semiconductor package including a lid having one or more heat pipes located on and/or within the lid to provide improved thermal management. A lid for a semiconductor package having one or more heat pipes thermally integrated with the lid may provide more uniform heat loss from the semiconductor package, reduce the risk of damage to the package due to excessive heat accumulation, and may enable the lid to be fabricated using less expensive materials, thereby reducing the costs of a semiconductor package.

A semiconductor device is extremely reliable because a sealant thereof is difficult to deteriorate even when a SiC semiconductor element is energized. The semiconductor device is produced by sealing a SiC semiconductor element 11 mounted on a multilayer substrate 12 and electrically conductive connection members 14 and 18 with a sealant 20 containing an ultraviolet light absorbent.

A number of different sealed interfaces for power modules are described. In one example, a sealed interface includes a printed circuit board including a contact pad for power conduction to a bus bar of the printed circuit board, a semiconductor module including at least one power transistor, a terminal pin electrically coupled to the power module, and a housing for the power module. The housing includes an open terminal aperture that extends through the housing. The printed circuit board is seated upon the open terminal aperture, to close and seal the open terminal aperture, with the contact pad positioned within the open terminal aperture. The terminal pin contacts the contact pad of the printed circuit board within the open terminal aperture, and the open terminal aperture comprises a transitional feature to abate electric field intensity around an interface between the open terminal aperture and the printed circuit board.

A semiconductor package includes a substrate, a package structure, and a lid structure. The package structure is disposed on the substrate. The lid structure is disposed over substrate, wherein the lid structure includes a main body covering and surrounding the package structure and a plurality of rib portions protruded from the main body and extended toward the package structure.