The present disclosure provides a power supply module and a manufacture method thereof, belonging to the technical field of power electronics. According to the present disclosure, a unibody conductive member is employed to connect a conductive part in a passive element to a conductive layer in a substrate. This is advantageous in simplifying the structure of the passive element, and enabling a structurally compact power supply module at a reduced cost. Additionally, stacking the passive element with the substrate may allow for a further compact structure for the power supply module, improving the space utilization rate for the power supply module, while enhancing the external appearance of the power supply module with tidiness, simplicity and aesthetics.

A battery disconnect unit including a housing, an electronic relay module installed on a charge/discharge line of a battery within the housing and including electronic switch devices capable of a switching operation of selectively blocking the flow of a current in the charge/discharge line, a heat dissipation cover provided with a structure surrounding at least a portion of the electronic relay module and formed of a material capable of heat exchange with the electronic relay module, and a cooling plate disposed in contact with the heat dissipation cover and provided to allow a refrigerant to flow in the cooling plate.

An object of the present invention is to provide a semiconductor device whose surfaces on both sides can be cooled and which has a function of insulating, on both the surfaces, the internal structure of a semiconductor package from the outside. The semiconductor device includes a first semiconductor package and a second semiconductor package. The second semiconductor package is joined on the first semiconductor package in such a manner that a first exposed surface of the first semiconductor package and a fourth exposed surface of the second semiconductor package are connected so as to face each other, and a second exposed surface of the first semiconductor package and a third exposed surface of the second semiconductor package are connected so as to face each other.

A diode pack housing for a rotating rectifier assembly can include a body having an interior surface defining an interior cavity open on a first end and configured to contain a diode pack and a plurality of bus bar channels defined axially on or in the inner surface in the interior cavity. The plurality of bus bar channels can be five or less bus bar channels.

A power conversion apparatus includes a semiconductor element, a plurality of lead frames, a flow-passage formation body, an insulating portion, a metal joining material, and a resin sealing portion. The plurality of lead frames are electrically connected to the semiconductor element. The flow-passage formation body forms a coolant flow passage in which a coolant flows. The insulating portion is arranged between the lead frame and the flow-passage formation body to provide insulation between the lead frame and the flow-passage formation body. The metal joining material joins the insulating portion and the flow-passage formation body. The resin sealing portion seals the semiconductor element and the lead frames. The semiconductor element and the lead frames are integrated with the flow-passage formation body to form a semiconductor cooling assembly by the resin sealing portion.

In an electric power conversion apparatus, a semiconductor module-cooler unit includes a semiconductor module and a cooler that has cooling pipes stacked with the semiconductor module in a stacking direction. A flow path forming component includes an electronic component main body and has an in-component flow path formed therein. A case receives both the semiconductor module-cooler unit and the flow path forming component therein. A pressure-applying member is arranged in the case to apply pressure to the semiconductor module-cooler unit from a rear side toward a front side in the stacking direction. Moreover, the flow path forming component is fixed to the case. The pressure-applying member, the semiconductor module-cooler unit and the flow path forming component are arranged in alignment with each other in the stacking direction. An in-cooler flow path formed in the cooler and the in-component flow path are fluidically connected with each other in the stacking direction.

Embodiments of mechanisms for forming a package are provided. The package includes a substrate and a contact pad formed on the substrate. The package also includes a conductive pillar bonded to the contact pad through solder formed between the conductive pillar and the contact pad. The solder is in direct contact with the conductive pillar.

A circuit assembly that includes a plurality of FETs that include source terminals and gate terminals. The circuit assembly includes a substrate portion to which the source terminals and the gate terminals are connected, and through-holes that are formed in the substrate portion for each FET and pass through the substrate portion in the thickness direction thereof.

A power electronics module includes a substrate with a substrate metallization layer, which is separated into conducting areas for providing conducting paths for the power electronics module; a semiconductor switch chip bonded with a first power electrode to a first conducting area of the substrate metallization layer; a conductor plate bonded to a second power electrode of the semiconductor switch chip opposite to the first power electrode.

An integrated circuit packaging structure and method are provided, the integrated circuit packaging structure includes: a substrate, the substrate being provided with a circuit layer and fine wiring; a chip, the chip being provided with a fine pin and a chip pin; the substrate is provided with at least two of said chips, a chip pin of at least one of said chips being electrically connected to the circuit layer; an insulation patch, the fine wiring being provided on the insulation patch, while the fine pin of the chip is electrically connected to the fine wiring, at least two of said chips being directly electrically connected by means of the fine wiring.