A display device with high resolution is provided. A thin display device is provided. A highly reliable display device is provided. The display device includes a display portion having a first display element which is positioned on one surface side of a first insulating layer and a second display element and a third display element which are positioned on the other surface side of the first insulating layer. The display portion has a region in which first display element and the second display element do not overlap with each other, and a region in which the first display element and the third display element partly do not overlap with each other. Furthermore, light emitted by the first display element, light emitted by the second display element, and light emitted by the third display element are released in the same direction.

A display device includes a first switching element including a second electrode and a first gate electrode, a second switching element including a third electrode connected with the first gate electrode, a third switching element including a fifth electrode connected with the second electrode, and sixth electrode, a fourth switching element including a seventh electrode connected with the second electrode, and an eighth electrode, a fifth switching element including a ninth electrode connected with the second electrode, and a tenth electrode, a first light emitting diode connected with the sixth electrode and the eighth electrode, a second light emitting diode connected with the eighth electrode and the sixth electrode, and a switch selectively connecting a common power source line with the sixth electrode or the eighth electrode. The first light emitting diode and the second light emitting diode have different polarities from each other with respect to a same direction.

A display device is provided. The display device includes a substrate, a driving circuit disposed on the substrate, and a light-emitting unit disposed on the driving circuit and electrically connected to the driving circuit. The light-emitting unit includes a first semiconductor layer, a quantum well layer disposed on the first semiconductor layer and a second semiconductor layer disposed on the quantum well layer. The second semiconductor layer includes a first top surface. The display device also includes a first protective layer disposed on the driving circuit and adjacent to the light-emitting unit. The first protective layer includes a second top surface and a plurality of conductive elements formed therein. The elevation of the first top surface is higher than the elevation of the second top surface.

Provided are an ultrasonic fingerprint identification circuit, a driving method thereof, and a display device. The ultrasonic fingerprint identification circuit comprises fingerprint identification units each including an ultrasonic fingerprint identification sensor connected to a first node; a control module connected to a composite signal line, a first control signal line and the first node and configured to provide a reset potential to the first node and to provide a pull-up potential to the first node in response to a first level provided by the composite signal line; a reading module connected to a second control signal line, the first node and a reading signal line, and configured to read a detection signal of the first node. The first control signal line connected to one fingerprint identification unit is reused as the second control signal line connected to another fingerprint identification unit.

Direct-bonded LED arrays and applications are provided. An example process fabricates a LED structure that includes coplanar electrical contacts for p-type and n-type semiconductors of the LED structure on a flat bonding interface surface of the LED structure. The coplanar electrical contacts of the flat bonding interface surface are direct-bonded to electrical contacts of a driver circuit for the LED structure. In a wafer-level process, micro-LED structures are fabricated on a first wafer, including coplanar electrical contacts for p-type and n-type semiconductors of the LED structures on the flat bonding interface surfaces of the wafer. At least the coplanar electrical contacts of the flat bonding interface are direct-bonded to electrical contacts of CMOS driver circuits on a second wafer. The process provides a transparent and flexible micro-LED array display, with each micro-LED structure having an illumination area approximately the size of a pixel or a smallest controllable element of an image represented on a high-resolution video display.

A manufacturing method of a metal bump structure is provided. A driving base is provided. At least one pad and an insulating layer are formed on the driving base. The pad is formed on an arrangement surface of the driving base and has an upper surface. The insulating layer covers the arrangement surface of the driving base and the pad, and exposes a part of the upper surface of the pad. A patterned metal layer is formed on the upper surface of the pad exposed by the insulating layer, and extends to cover a part of the insulating layer. An electro-less plating process is performed to form at least one metal bump on the patterned metal layer. A first extension direction of the metal bump is perpendicular to a second extension direction of the driving base.

A flow guide apparatus includes a columnar flow guide portion, a plurality of connection portions and a loop portion. The columnar flow guide portion includes a first surface and a second surface that are perpendicular to a thickness direction thereof, and a blind hole formed in the second surface. A center line of the columnar flow guide portion is parallel to the thickness direction thereof. The plurality of connection portions are arranged at intervals and are at least connected with an edge of the second surface of the columnar flow guide portion. The loop portion is connected with the plurality of connection portions, and is farther away from the columnar flow guide portion than the plurality of connection portions.

A display apparatus includes substrate a semiconductor layer on the substrate, and having a semiconductor pattern, a first conductive layer on the semiconductor layer, and including a first wiring that extends in a first direction, a second wiring that protrudes from the first wiring in a second direction crossing the first direction, and a driving gate electrode, and a second conductive layer on the first conductive layer, and including a first electrode that overlaps the driving gate electrode, wherein the semiconductor pattern includes a first pattern that extends in the first direction and overlaps the second wiring, and a second pattern that extends in the second direction and overlaps the first wiring, and wherein the first electrode includes a protruding electrode that overlaps at least part of the first pattern and at least part of the second pattern.

There are provided an electrostatic protection circuit, an array substrate, and a display apparatus. The electrostatic protection circuit includes: at least one first transistor and at least one second transistor. Each of the first transistors has a gate and a second electrode both connected to an electrostatic protection line, and a first electrode connected to a signal line; and each of the second transistors has a gate and a second electrode both connected to the signal line, and a first electrode connected to the electrostatic protection line. One resistor is connected in series between a gate and a second electrode of at least one transistor in the electrostatic protection circuit.

To provide a semiconductor device, a liquid crystal display device, and an electronic device which have a wide viewing angle and in which the number of manufacturing steps, the number of masks, and manufacturing cost are reduced compared with a conventional one. The liquid crystal display device includes a first electrode formed over an entire surface of one side of a substrate; a first insulating film formed over the first electrode; a thin film transistor formed over the first insulating film; a second insulating film formed over the thin film transistor; a second electrode formed over the second insulating film and having a plurality of openings; and a liquid crystal over the second electrode. The liquid crystal is controlled by an electric field between the first electrode and the second electrode.