Provided is a multiplexing signal processing device based on a passive element including a plurality of signal converters that respectively process a plurality of input signals and are arranged in a matrix consisting of N rows and M columns and include N signal converter blocks respectively connected to N row unit output terminals; and M signal converter blocks respectively connected to M column unit output terminals. The signal converters each include a first diode having an input terminal connected to an input signal node, a second diode having an input terminal connected to the input signal node, and a ground resistor coupled to the input signal node.

Provided are a method of manufacturing a terahertz detection device including detectors and lenses arranged in an array and a terahertz detection apparatus. An example method includes forming detectors in a first area of a first surface of a base substrate through a double-sided photoetching process to form a detector array, and providing at least one first alignment mark in a second area of the first surface of the base substrate. A plurality of lens mounting parts are formed in a third area of a second surface of the base substrate through the double-sided photoetching process, and at least one second alignment mark is provided in a fourth area of the second surface of the base substrate. The lenses are mounted to the lens mounting parts to form the detection device. The first alignment mark is aligned with the second alignment mark by using a double-sided photoetching machine.

A detection component is provided for detecting electromagnetic radiation, the detection component comprising a mask arranged to block the electromagnetic radiation for at least one detector. The opaque mask comprises a successive stack of a first metal layer, a second metal layer, a third transparent layer having a low optical index, and an assembly of metal components. The second metal layer, the transparent layer, and the assembly of components form MIM structures in the wavelength range. The invention further relates to a method for manufacturing such a detection component.

A light-receiving device includes a light-receiving element formed on a main surface of a substrate, a light incidence surface formed on a side portion of the substrate at an acute angle or an obtuse angle with respect to the plane of the substrate and having an inclined surface forming one plane, and a lens for focusing light incident on the light-receiving element. The lens is disposed at a position where the light incident from the light incidence surface is reflected on a side of a back surface of the substrate.

To provide a ranging device having improved quantum efficiency and resolution. The present disclosure provides a ranging device including: a semiconductor layer having a first surface and a second surface opposite to the first surface; a lens on the second surface side; first and second charge storage sections in the semiconductor layer on the first surface side; a photoelectric conversion section that is in contact with the semiconductor layer on the first surface side, the photoelectric conversion section including a material different from a material of the semiconductor layer; first and second voltage application sections that apply a voltage to the semiconductor layer between the first and second charge storage sections and the photoelectric conversion section; and a waveguide provided in the semiconductor layer so as to extend from the second surface to the photoelectric conversion section, the waveguide including a material different from the material of the semiconductor layer.

The silicon-based photomultiplier device comprises a substrate (1), a first layer (2) of a first conductivity type, a second layer (3) of a second conductivity type formed on the first layer, wherein the first layer (2) and the second layer (3) form a p-n junction, wherein the first layer (2) and the second layer (3) are disposed on or above the substrate (1). A material layer (15) between the substrate (1) and the first layer (2) fulfills the function of a light absorber, thereby efficiently suppressing crosstalk between adjacent cells of the device. Material layer (15) may further serve as an electrode for readout of electrical signals from the device.

An optical sensing device is provided. The optical sensing device includes a substrate, a housing, a light receiver, and an optical structure. The housing is disposed on an upper surface of the substrate, and the housing and the substrate collectively define a cavity. The light receiver is disposed in the cavity, and the housing surrounds the light receiver. The optical structure is disposed on an upper surface of the light receiver, and the optical structure includes a plurality of concave portions and a plurality of convex portions. The concave portions and the convex portions are alternately arranged to form an array, and a light transmittance of the concave portions is greater than a light transmittance of the convex portions.

A light receiver (50) is provided having a plurality of avalanche photodiode elements (10) that are each biased by a bias above a breakdown voltage and that are thus operated in a Geiger mode to trigger a Geiger current on light reception, wherein the avalanche photodiode elements (10) have a first connector (20, 22, 28a-b) and a second connector (20, 22, 28a-b); and wherein a first signal tapping circuit (12) for reading out the avalanche photodiode elements is connected to one of the connectors (20, 22, 28a-b). In this respect, a second signal tapping circuit (12) for reading out the avalanche photodiode elements (10) is connected to the other connector (20, 22, 28a-b).

In one embodiment, a photo detector is provided with a semiconductor layer having a first light receiving surface and a second light receiving surface opposite to the first light receiving surface, and a diffraction grating which is provided on the first light, receiving surface side of the semiconductor layer and has convex portions. The convex portions are arranged in one direction at a predetermined cycle.

A semiconductor crystal substrate includes a crystal substrate that is formed of a material including one of GaSb and InAs, a first buffer layer that is formed on the crystal substrate and formed of a material including GaSb, and a second buffer layer that is formed on the first buffer layer and formed of a material including GaSb. The first buffer layer has a p-type conductivity, and the second buffer layer has an n-type conductivity.