The present invention provides an organic electroluminescent device, a display panel, and a display apparatus. A light-emitting layer comprises a first compound, a second compound, a third compound, and a fourth compound; the first compound and the second compound form a first exciplex under optical excitation and electric excitation; excitonic energy compounded by the first exciplex can be transferred to the third compound; then the third compound and the second compound are compounded to form a second exciplex; and excitonic energy compounded by the second exciplex can be transferred to the fourth compound. In the excitonic energy transfer process, triplet excitons improve a reverse intersystem crossing process and are converted into singlet excitons to radiate and emit fluorescence when an exciplex is formed by means of compounding; the singlet excitons are effectively used for Forster energy transfer, and Dexter energy transfer is inhibited, such that energy loss is avoided, the excitonic energy is effectively used, and the device efficiency is improved.

A hole transport material, a manufacturing method thereof, and an electroluminescent device are provided. A main chain of a molecular structure of the hole transport material includes spiro aromatic amine, and a branch chain of the molecular structure of the hole transport material includes an aryl group or a heteroaryl group. The hole transport material can effectively improve performance of hole injection and hole transport, thereby balancing electrons and holes in electroluminescent devices and realizing relatively low voltage and relatively high efficiency.

The present disclosure provides an organic light emitting device comprising a hole injection layer including a cured product of a compound represented by the following Chemical Formula 1, and a hole transport layer including a polymer containing a repeating unit represented by the following Chemical Formula 2:

##STR00001## wherein all the variables a10-re described herein.

An organic electroluminescent device having high efficiency and high driving stability, and a material suitable for the organic electroluminescent device are provided. The material for organic electroluminescent devices comprises an indolocarbazole compound represented by a general formula (1). In the formula, the ring a is represented by a formula (1a), X is NR, S, O or CR.sub.2, and Ar.sup.1 and Ar.sup.2 are an aromatic heterocyclic group represented by a formula (1b). Y is N or CR, and at least one is N. L.sup.1 is an aromatic hydrocarbon group. The material for the organic electroluminescent devices is suitable as material for the host of the light emitting layer or the hole blocking layer of organic EL devices.

##STR00001##

A near-infrared organic EL device with favorable efficiency is provided. A light-emitting device including a first electrode, a second electrode, and an EL layer is provided; in which the EL layer is positioned between the first electrode and the second electrode; in which the EL layer emits light having a peak of an emission spectrum in a wavelength range of greater than or equal to 750 nm and less than or equal to 1000 nm; in which one of the first electrode and the second electrode is an electrode having a transmitting property with respect to light with a peak wavelength of the emission spectrum of the EL layer; in which a first layer is provided in contact with a surface of the electrode having a transmitting property, which is opposite to a surface facing the EL layer; in which the first layer contains an organic compound; and in which the first layer has the local maximum value of an extinction coefficient k in the visible light region.

The present technology relates to an imaging element, a manufacturing method, and an electronic apparatus capable of forming a photoelectric conversion part in a steep impurity profile. Laminated first and second photoelectric conversion parts are provided between a first surface of a semiconductor substrate and a second surface opposite to the first surface, an impurity profile of the first photoelectric conversion part is a profile having a peak on the first surface side, and an impurity profile of the second photoelectric conversion part is a profile having a peak on the second surface side. A side on which an impurity concentration of the first photoelectric conversion part is low and a side on which an impurity concentration of the second photoelectric conversion part is low face each other. The present technology can be applied to, for example, an imaging element in which a plurality of photoelectric conversion parts are laminated in a semiconductor substrate.

An opto-electronic device having a plurality of layers, comprising a first capping layer (CPL) comprising a first CPL material and disposed in a first emissive region configured to emit photons having a first wavelength spectrum that is characterized by a first onset wavelength; and a second CPL comprising a second CPL material and disposed in a second emissive region configured to emit photons having a second wavelength spectrum that is characterized by a second onset wavelength; wherein at least one of the first CPL and the first CPL material (CPL(m)1) exhibits a first absorption edge at a first absorption edge wavelength that is shorter than the first onset wavelength; and at least one of the second CPL and the second CPL material (CPL(m)2) exhibits a second absorption edge at a second absorption edge wavelength that is shorter than the second onset wavelength.

A resin substrate layer and a first inorganic insulating film on the resin substrate layer are provided. A notch is provided to an end portion of the resin substrate layer. A first inorganic-insulating-film-free region is provided along the notch. From the first inorganic-insulating-film-free region, the first inorganic insulating film is removed.

In order to realize a light-emitting element having high luminous efficiency in a light-emitting device with quantum dots, the light-emitting element including a hole transport layer and a light-emitting layer including a quantum dot luminescent body, the hole transport layer and the light-emitting layer being layered on each other is provided. The hole transport layer includes a compound of one or more of Cu.sup.+, Ag.sup.+, and Au.sup.+, and one or more of I.sup.−, SCN.sup.−, SeCN.sup.−, and CN.sup.−.

A vertical-structure field-effect transistor comprises: a gate electrode, which is formed on a substrate and has a horizontal plane extending in the planar direction and a vertical plane extending in the height direction; a gate insulating layer for covering the gate electrode; a vertical channel which is formed on the gate insulating layer and has a channel formed in the height direction; a source electrode formed to make contact with one end of the vertical channel; and a drain electrode formed to make contact with the other end of the vertical channel and formed at a height level different from that of the source electrode, wherein channel on/off of the vertical channel is controlled by means of an electric field formed from the vertical plane of the gate electrode to the vertical channel, and the source electrode and/or the drain electrode can be non-overlapping on the gate electrode in the height direction of the gate electrode.