A display device includes a display panel, a first insulating layer on the display panel and having a first refractive index, and a second insulating layer on the first insulating layer and having a second refractive index. The display panel includes a pixel definition layer in which a plurality of emission openings are defined, and a plurality of light emitting elements that respectively correspond to the plurality of emission openings. The first insulating layer has a plurality of openings that correspondingly overlap the plurality of emission openings. Each of the plurality of emission openings extends in an extending direction. Each of the plurality of openings extends in a direction that intersects an extending direction of an overlapped emission opening.

A display device includes: a substrate including a first area, a second area, and a bending area between the first area and the second area; a display layer disposed on the first area of the substrate; a display driving unit disposed on the second area of the substrate; and a cover member including a first surface and a second surface and extending to cover a portion of the second area of the substrate, the bending area of the substrate, and a portion of the first area of the substrate, the cover member including a separation area in which the cover member is partially separated on the first surface opposite to the second surface facing the substrate.

A display device includes a base layer, a first electrode on the base layer, a pixel-defining layer in which an opening exposing an upper surface of the first electrode is defined, a protective layer overlapping the pixel-defining layer and between the pixel-defining layer and the first electrode, a functional layer on the first electrode in the opening, an auxiliary electrode on an upper surface of the pixel-defining layer, and a second electrode on the functional layer and the auxiliary electrode.

Provided is an organometallic compound of Chemical Formula 1: ##STR00001## wherein, in Chemical Formula 1: X is O, S, NH, or Se; R.sub.1 is —Si(R.sub.a)(R.sub.b)(R.sub.c), where R.sub.a, R.sub.b, and R.sub.c are hydrogen, deuterium, or a substituted or unsubstituted C.sub.1-10 alkyl; R.sub.2, R.sub.3 and R.sub.4 are each independently hydrogen, deuterium, halogen, cyano, amino, a substituted or unsubstituted C.sub.1-60 alkyl, a substituted or unsubstituted C.sub.1-60 haloalkyl, a substituted or unsubstituted C.sub.1-60 alkoxy, a substituted or unsubstituted C.sub.1-60 haloalkoxy, a substituted or unsubstituted C.sub.3-60 cycloalkyl, a substituted or unsubstituted c.sub.2-60 alkenyl, a substituted or unsubstituted C.sub.6-60 aryl, a substituted or unsubstituted C.sub.6-60 aryloxy, or a substituted or unsubstituted C.sub.2-60 heterocyclic group containing one or more heteroatoms selected from the group consisting of N, O and S; a and b are each 0 and 1, or 1 and 0, respectively; and n is 1 or 2,
and an organic light emitting device including the same.

A semiconductor device includes: a substrate (10); a semiconductor layer (20) disposed on a main surface of this substrate (10); and a first main electrode (30) and a second main electrode (40), which are disposed on the substrate (10) separately from each other with the semiconductor layer (20) sandwiched therebetween and are individually end portions of a current path of a main current flowing in an on-state. The semiconductor layer (20) includes: a first conductivity-type drift region (21) through which a main current flows; a second conductivity-type column region (22) that is disposed inside the drift region (21) and extends in parallel to a current path; and an electric field relaxation region (23) that is disposed in at least a part between the drift region (21) and the column region (22) and is either a low-concentration region in which an impurity concentration is lower than in the same conductivity-type adjacent region or a non-doped region.

A device including a III-N material is described. The device includes a transistor structure having a first layer including a first group III-nitride (III-N) material, a polarization charge inducing layer above the first layer, the polarization charge inducing layer including a second III-N material, a gate electrode above the polarization charge inducing layer and a source structure and a drain structure on opposite sides of the gate electrode. The device further includes a plurality of peripheral structures adjacent to transistor structure, where each of the peripheral structure includes the first layer, but lacks the polarization charge inducing layer, an insulating layer above the peripheral structure and the transistor structure, wherein the insulating layer includes a first dielectric material. A metallization structure, above the peripheral structure, is coupled to the transistor structure.

Disclosed is a metal source/drain-based field effect transistor having a structure that replaces a portion of a semiconductor of a source/drain with a metal and a method of manufacturing the same. By replacing the source/drain region with the source/drain metal region, increase of the parasitic resistance of a conventional three-dimensional MOSFET of several tens of nanometers, lattice mismatch of the source/drain during selective epitaxial growth, and self-heating effect can be fundamentally solved. Further, since the metal is deposited after the partial etching of the source/drain region or the selective epitaxial growth is partially performed under the conventional CMOS process, the process can be performed without using any additional mask.

A vertical high-blocking III-V bipolar transistor, which includes an emitter, a base and a collector. The emitter has a highly doped emitter semiconductor contact region of a first conductivity type and a first lattice constant. The base has a low-doped base semiconductor region of a second conductivity type and the first lattice constant. The collector has a layered low-doped collector semiconductor region of the first conductivity type with a layer thickness greater than 10 μm and the first lattice constant. The collector has a layered highly doped collector semiconductor contact region of the first conductivity type. A first metallic connecting contact layer is formed in regions being integrally connected to the emitter. A second metallic connecting contact layer is formed in regions being integrally connected to the base. A third metallic connecting contact region is formed at least in regions being arranged beneath the collector.

A method for forming a doped layer is disclosed. The doped layer may be used in a NMOS or a silicon germanium application. The doped layer may be created using an n-type halide species in a n-type dopant application, for example.

A light-emitting device includes a light-emitting layer, an electron transport layer provided on the light-emitting layer, and a cathode provided on the electron transport layer. A main component of the cathode is a metal boride. With the above configuration, a work function of the cathode is reduced and electron injection efficiency is improved. As a result, luminous efficiency of the light-emitting device is improved.