Waveguides and electromagnetic cavities fabricated in hyperuniform disordered materials with complete photonic bandgaps are provided. Devices comprising electromagnetic cavities fabricated in hyperuniform disordered materials with complete photonic bandgaps are provided. Devices comprising waveguides fabricated in hyperuniform disordered materials with complete photonic bandgaps are provided. The devices include electromagnetic splitters, filters, and sensors.

A layered heterostructure, comprising alternating layers of different semiconductors, wherein one of the atom species of one of the semiconductors has a faster diffusion rate along an oxidizing interface than an atom species of the other semiconductor at an oxidizing temperature, can be used to fabricate embedded nanostructures with arbitrary shape. The result of the oxidation will be an embedded nanostructure comprising the semiconductor having slower diffusing atom species surrounded by the semiconductor having the higher diffusing atom species. The method enables the fabrication of low- and multi-dimensional quantum-scale embedded nanostructures, such as quantum dots (QDs), toroids, and ellipsoids.

A light-emitting device and a method of manufacturing the device are disclosed in this invention. The light-emitting device includes a molded body having metal leads and a plane surface for mounting a light-emitting element. The light-emitting device also includes a lens having one central portion, one edge portion surrounding the central portion, and one base portion supporting the central portion and the edge portion. The central portion has a dome-shaped top surface. The edge portion has one inner top surface and one outer top surface, and the inner top surface of the edge portion connects with the dome-shaped top surface of the central portion to form a valley-shaped groove. The base portion is attached onto the molded body to form a sealed chamber to enclose the light-emitting element.

A light emitting device includes an LED chip, a light-transmissible member and a light-reflecting member. The LED chip has a plurality of interconnecting side surfaces having a roughened structure and a plurality of corners. The light-transmissible member covers the side surfaces and the corners and includes a light-transmissible material layer having a breadth value W(A) of a viscosity coefficient (A) range of the light-transmissible material, which satisfies a relation of W(A)B*D/C: where B represents a thickness of the light-transmissible material layer, represents a thickness of the LED chip measured from the first surface to the second surface, and D represents a roughness of the roughened structure. A method for manufacturing the light emitting device is also provided.

A light-emitting device and a method of manufacturing the device are disclosed in this invention. The light-emitting device includes a molded body having metal leads and a plane surface for mounting a light-emitting element. The light-emitting device also includes a lens having one central portion, one edge portion surrounding the central portion, and one base portion supporting the central portion and the edge portion. The central portion has a dome-shaped top surface. The edge portion has one inner top surface and one outer top surface, and the inner top surface of the edge portion connects with the dome-shaped top surface of the central portion to form a valley-shaped groove. The base portion is attached onto the molded body to form a sealed chamber to enclose the light-emitting element.

An apparatus includes a flexible silicon (Si) substrate, such as a crystalline n-type substrate, and a heterostructure structure formed on the silicon substrate. The heterojunction structure includes a first layered structured deposited on a first side of the silicon substrate. The first layered structured includes a first amorphous intrinsic silicon layer, an amorphous n-type or p-type silicon layer, and a transparent conductive layer. The second layered structure includes a second amorphous intrinsic silicon layer, an amorphous p-type or n-type silicon layer, and a transparent conductive layer. The heterostructure structure is configured to operate as a photovoltaic cell and an infrared light emitting diode.

An indirect band gap light emitting device comprises a first body of non-monocrystalline indirect band gap semiconductor material. In this first body, two regions are formed: a first region with a first doping kind and a first doping concentration and a second region with a second doping kind and a second doping concentration. A junction is formed between the first region and the second region with a terminal arrangement connected to the first body and arranged to reverse bias the junction so as to emit light. The first body is formed from a deposited layer of semiconductor to form an integral part of a substrate. An integrated circuit can include the light emitting device and a second body of monocrystalline indirect band gap semiconductor material. A third body may separate and galvanically isolate the first and second bodies from each other.

The invention provides an article of manufacture, and methods of designing and making the article. The article permits or prohibits waves of energy, especially photonic/electromagnetic energy, to propagate through it, depending on the energy band gaps built into it. The structure of the article may be reduced to a pattern of points having a hyperuniform distribution. The point-pattern may exhibit a crystalline symmetry, a quasicrystalline symmetry or may be aperiodic. In some embodiments, the point pattern exhibits no long-range order. Preferably, the point-pattern is isotropic. In all embodiments, the article has a complete, TE- and TM-optimized band-gap. The extraordinary transmission phenomena found in the disordered hyperuniform photonic structures of the invention find use in optical micro-circuitry (all-optical, electronic or thermal switching of the transmission), near-field optical probing, thermophotovoltaics, and energy-efficient incandescent sources.

A light-emitting device and a method of manufacturing the device are disclosed in this invention. The light-emitting device includes a molded body having metal leads and a plane surface for mounting a light-emitting element. The light-emitting device also includes a lens having one central portion, one edge portion surrounding the central portion, and one base portion supporting the central portion and the edge portion. To produce the device in mass scale, a first sheet of molded structure comprising a plurality of molded bodies having metal leads is provided, then a second sheet of molded structure comprising a plurality of lenses is placed on top of the first sheet of molded structure. The two sheets of molded structures are bonded together with adhesives and by a heat-pressing process to create a bonded structure. Finally, the bonded structure is cut to create individual light emitting devices.

Provided are a method of manufacturing a quantum-dot photoactive-layer including: alternately depositing an amorphous silicon compound layer and a silicon-rich compound layer containing conductive impurities and an excess of silicon based on a stoichiometric ratio on a silicon substrate to form a composite multi-layer; and heat treating the composite multi-layer to form a plurality of silicon quantum-dots in a matrix corresponding to a silicon compound, wherein an amorphous silicon layer containing the conductive impurities is formed at least one time instead of the silicon-rich compound layer, and a quantum-dot photoactive-layer manufactured using the method as described above.