An integrated circuit (IC) package includes a first die with a first surface overlaying a substrate. The first die includes a first metal pad at a second surface opposing the first surface. The IC package also includes a dielectric layer having a first surface contacting the second surface of the first die. The IC package further includes a second die with a surface that contacts a second surface of the dielectric layer. The second die includes a second metal pad aligned with the first metal pad of the first die. A plane perpendicular to the second surface of the first die intersects the first metal pad and the second metal pad.

A semiconductor module may include a plurality of semiconductor elements; and a first power terminal, a second power terminal and a third power terminal electrically connected to the plurality of semiconductor elements. The plurality of semiconductor elements may include at least one upper arm switching element electrically connected between the first power terminal and the second power terminal; and at least one lower arm switching element electrically connected between the second power terminal and the third power terminal. A number of the at least one upper arm switching element may be different from a number of the at least one lower arm switching element.

A manufacturing method of an electronic-component-mounted module includes a step of forming a laminate of: a ceramic substrate board, a circuit layer made of aluminum or aluminum alloy on the ceramic substrate board, a first silver paste layer between the circuit layer and one surface of an electronic component, the electronic component, a lead frame made of copper or copper alloy, and a second silver paste layer between the other surface of the electronic component and the lead frame; and a step of batch-bonding bonding the circuit layer, the electronic component, and the lead frame at one time by heating the laminate to a heating temperature of not less than 180° C. to 350° C. inclusive with adding a pressure of 1 MPa to 20 MPa inclusive in a laminating direction on the laminate, to sinter the first and second silver paste layers and form first and second silver-sintered bonding layers.

A double-side cooling-type semiconductor device includes a first circuit board and a second circuit board, a semiconductor element bonded to a control electrode of the first circuit board, a first spacer disposed between the first circuit board and the semiconductor element, bonded to the first circuit board, and bonded to the semiconductor element, and a second spacer disposed between the second circuit board and the semiconductor element, bonded to the second circuit board, and bonded to the semiconductor element.

In a general aspect, an apparatus can include an inner package including a first silicon carbide die having a die gate conductor coupled to a common gate conductor, and a second silicon carbide die having a die gate conductor coupled to the common gate conductor. The apparatus can include an outer package including a substrate coupled to the common gate conductor, and a clip coupled to the inner package and coupled to the substrate.

A semiconductor package includes an encapsulant body; a first electrically conductive element having an outwardly exposed metal surface; a first carrier substrate having a first electrically conductive layer, a second electrically conductive layer having an outwardly exposed surface, and an electrical insulation layer; a first electrically conductive spacer between the first electrically conductive element and the first electrically conductive layer; a power semiconductor chip between the first electrically conductive element and the first electrically conductive layer; and a second electrically conductive spacer between the first electrically conductive element and the power semiconductor chip, a first carrier region of the first electrically conductive layer is connected to a first power terminal, a second carrier region of the first electrically conductive layer is alongside the first carrier region and is connected to a second power terminal, a first region of the first electrically conductive element is connected to a third power terminal.

An electronic device module includes a first board including a first side and a second side facing in opposite directions, the first side of the first board being configured to have a first electronic device mounted thereon; a second board adhered to the second side of the first board, and including a device accommodating portion that is a space formed by removing a central portion of the second board; a second electronic device disposed in the device accommodating portion and mounted on the second side of the first board so that the second electronic device is adjacent to an internal edge side of the second board defining a boundary of the device accommodating portion; and a bonding layer disposed in a gap between the first board and the second board and extending into a gap between the second side of the first board and the second electronic device, the bonding layer bonding the second board and the second electronic device to the first board.

An electronic device module includes a first board including a first side and a second side facing in opposite directions, the first side of the first board being configured to have a first electronic device mounted thereon; a second board adhered to the second side of the first board, and including a device accommodating portion that is a space formed by removing a central portion of the second board; a second electronic device disposed in the device accommodating portion and mounted on the second side of the first board so that the second electronic device is adjacent to an internal edge side of the second board defining a boundary of the device accommodating portion; and a bonding layer disposed in a gap between the first board and the second board and extending into a gap between the second side of the first board and the second electronic device, the bonding layer bonding the second board and the second electronic device to the first board.

Implementations of semiconductor packages may include: a first substrate having a first dielectric layer coupled between a first metal layer and a second metal layer; a second substrate having a second dielectric layer coupled between a third metal layer and a fourth metal layer. A first die may be coupled with a first electrical spacer coupled in a space between and coupled with the first substrate and the second substrate and a second die may be coupled with a second electrical spacer coupled in a space between and coupled with the first substrate and the second substrate.

A semiconductor device includes first and second semiconductor elements and first and second conductive members. A first electrode on the first semiconductor element is bonded to a first stack part of the first conductive member by a first bonding layer. A second electrode on the second semiconductor element is bonded to a second stack part of the second conductive member by a second bonding layer. A first joint part of the first conductive member is bonded to a second joint part of the second conductive member by an intermediate bonding layer. A first surface of the first joint part facing the second joint part, a side surface of the first joint part continuous from the first surface, a second surface of the second joint part facing the first joint part, and a side surface of the second joint part continuous from the second surface are covered by nickel layers.