A package structure including at least one semiconductor die, an insulating encapsulant, an insulating layer, conductive pillars, a dummy pillar, a first seed layer and a redistribution layer is provided. The semiconductor die have a first surface and a second surface opposite to the first surface. The insulating encapsulant is encapsulating the semiconductor die. The insulating layer is disposed on the first surface of the semiconductor die and on the insulating encapsulant. The conductive pillars are located on the semiconductor die. The dummy pillar is located on the insulating encapsulant. The first seed layer is embedded in the insulating layer, wherein the first seed layer is located in between the conductive pillars and the semiconductor die, and located in between the dummy pillar and the insulating encapsulant. The redistribution layer is disposed over the insulating layer and is electrically connected to the semiconductor die through the conductive pillars.

A package structure including at least one semiconductor die, an insulating encapsulant, an insulating layer, conductive pillars, a dummy pillar, a first seed layer and a redistribution layer is provided. The semiconductor die have a first surface and a second surface opposite to the first surface. The insulating encapsulant is encapsulating the semiconductor die. The insulating layer is disposed on the first surface of the semiconductor die and on the insulating encapsulant. The conductive pillars are located on the semiconductor die. The dummy pillar is located on the insulating encapsulant. The first seed layer is embedded in the insulating layer, wherein the first seed layer is located in between the conductive pillars and the semiconductor die, and located in between the dummy pillar and the insulating encapsulant. The redistribution layer is disposed over the insulating layer and is electrically connected to the semiconductor die through the conductive pillars.

A display device may include: a substrate including a display area and a non-display area; and pixels provided on the display area, and each including sub-pixels each including an emission area and a non-emission area. Each sub-pixel may include a pixel circuit layer including at least one transistor, and a display element layer including at least one light emitting element configured to emit light and connected to the transistor. The display element layer may include: a first electrode and a second electrode spaced apart from each other with the light emitting element interposed therebetween; the light emitting element connected between the first and second electrodes; and a planarization layer provided on the pixel circuit layer, and coming into contact with at least a portion of each of opposite ends of the light emitting element. The planarization layer may overlap with each of the first electrode and the second electrode.

An electronic sub-assembly (36) comprising at least one electronic component (14) embedded in a sequence of layers, wherein the electronic component (14) is arranged in a recess of an electrically conductive central layer (16) and directly adjoins a resin layer (12, 20) on each side.

A method of making a micro-transfer printed system includes providing a source wafer having a plurality of micro-transfer printable source devices arranged at a source spatial density; providing an intermediate wafer having a plurality of micro-transfer printable intermediate supports arranged at an intermediate spatial density less than or equal to the source spatial density; providing a destination substrate; micro-transfer printing the source devices from the source wafer to the intermediate supports of the intermediate wafer with a source stamp having a plurality of posts at a source transfer density to make an intermediate device on each intermediate support; and micro-transfer printing the intermediate devices from the intermediate wafer to the destination substrate at a destination spatial density less than the source spatial density with an intermediate stamp having a plurality of posts at an intermediate transfer density less than the source transfer density.

A method of printing transferable components includes pressing a stamp including at least one transferable semiconductor component thereon on a target substrate such that the at least one transferable component and a surface of the target substrate contact opposite surfaces of a conductive eutectic layer. During pressing of the stamp on the target substrate, the at least one transferable component is exposed to electromagnetic radiation that is directed through the transfer stamp to reflow the eutectic layer. The stamp is then separated from the target substrate to delaminate the at least one transferable component from the stamp and print the at least one transferable component onto the surface of the target substrate. Related systems and methods are also discussed.

Development of smart objects with electronic functions requires integration of printed components with IC chips or dies. Conventional chip or die bonding including wire bonding, flip chip bonding, and soldering may not be applicable to chip or die attachment on low temperature plastic surfaces used in physical objects. Printing conductive connection traces requires a smooth interface between contact pads of a chip and the surface of the physical object. In order to address this issue of chip/die attachment to a physical object, this disclosure provides embodiments to construct a fixture on a chip or die for attachment and electrical connection onto a physical object by printing operations and/or ACF bonding methods.

Various embodiments provide for a chip package including a carrier; a layer over the carrier; a further carrier material over the layer, the further carrier material comprising a foil; one or more openings in the further carrier material, wherein the one or more openings expose at least one or more portions of the layer from the further carrier material; and a chip comprising one or more contact pads, wherein the chip is adhered to the carrier via the one or more exposed portions of the layer.

The present invention relates to an electrical assembly which has a conformal coating, wherein said conformal coating is obtainable by a method which comprises: (a) plasma polymerization of a compound of formula (I) and a fluorohydrocarbon, wherein the molar ratio of the compound of formula (I) to the fluorohydrocarbon is from 5:95 to 50:50, and deposition of the resulting polymer onto at least one surface of the electrical assembly: wherein: R.sub.1 represents C.sub.1-C.sub.3 alkyl or C.sub.2-C.sub.3 alkenyl; R.sub.2 represents hydrogen, C.sub.1-C.sub.3 alkyl or C.sub.2-C.sub.3 alkenyl; R.sub.3 represents hydrogen, C.sub.1-C.sub.3 alkyl or C.sub.2-C.sub.3 alkenyl; R.sub.4 represents hydrogen, C.sub.1-C.sub.3 alkyl or C.sub.2-C.sub.3 alkenyl; R.sub.5 represents hydrogen, C.sub.1-C.sub.3 alkyl or C.sub.2-C.sub.3 alkenyl; and R.sub.6 represents hydrogen, C.sub.1-C.sub.3 alkyl or C.sub.2-C.sub.3 alkenyl, and (b) plasma polymerization of a compound of formula (I) and deposition of the resulting polymer onto the polymer formed in step (a). ##STR00001##

Various embodiments provide for a chip package consisting of a layer over a carrier, further carrier material over the layer, wherein one or more portions of the further carrier material is removed, and a chip with one or more contact pads, where the chip is adhered to the carrier via the layer. A wafer level package consisting of a plurality of chips adhered to the carrier via a plurality of portions of the layer released from the further carrier material is also provided for.