Provided are a device packing facility and method using DEHT and a device processing apparatus utilizing the DEHT. The device packaging facility includes a mounting unit providing bis(2-ethylhexyl) terephthalate (DEHT) between first and second devices to attach the first and second devices to each other, a processing unit thermally processing the first and second devices that are attached to each other to remove the DEHT and fix the first and second devices to each other, and a transfer unit transferring the first and second devices that are attached to each other from the mounting unit to the processing unit.

A mounting method of an electronic device includes providing an electronic device which includes a semiconductor chip body including an upper surface, a lower surface opposite to the upper surface, and side surfaces connecting the upper surface and the lower surface, a plurality of bumps disposed on the lower surface, and an under-fill element disposed on at least one side surface. The method further includes mounting the electronic device on a printed circuit board including connecting pads formed thereon. The bumps of the semiconductor chip body are connected to the connecting pads. The method additionally includes heating the under-fill element to a predetermined temperature to form an under-fill layer between the lower surface of the semiconductor chip body and the printed circuit board.

A packaged assembly is disclosed, including thermal interface material dispensed on an organic package and methods of manufacturing. The method includes dispensing a thermal interface material (TIM) on an electronic assembly. The method further includes removing volatile species of the TIM, prior to lid placement on the electronic assembly. The method further includes placing the lid on the TIM, over the electronic assembly. The method further includes pressing the lid onto the electronic assembly.

A mounting apparatus of a chip including a mechanism configured to arrange a front surface of a chip and a front surface of a substrate to face each other such that a back surface of the chip is attached to a sheet, the sheet having a first portion corresponding to the selected chip and a the second portion arranged at a periphery of the first portion corresponding to the selected chip in the sheet when seen in a direction perpendicular to the front surface of the substrate; a holding mechanism moving in a direction that is not perpendicular to the front surface of the substrate and arranged to hold the second portion of the sheet; and a pushing mechanism for pushing the back surface of the chip through the first portion of the sheet so that the front surface of the chip is brought close to the front surface of the substrate with the first portion deformed in a state where the second portion is held by the holding mechanism, and configured to release the pushing mechanism from the first portion of the sheet to strip the sheet from the back surface of the chip.

A packaged assembly is disclosed, including thermal interface material dispensed on an organic package and methods of manufacturing. The method includes dispensing a thermal interface material (TIM) on an electronic assembly. The method further includes removing volatile species of the TIM, prior to lid placement on the electronic assembly. The method further includes placing the lid on the TIM, over the electronic assembly. The method further includes pressing the lid onto the electronic assembly.

A system of bonded substrates may include a first substrate, a second substrate, and a bonding layer. The first substrate may include a bonding surface, wherein a geometry of the bonding surface of the first substrate includes a plurality of microchannels. The second substrate may include a complementary bonding surface. The bonding layer may be positioned between the first substrate and the second substrate, wherein the bonding layer may fill the microchannels of the first substrate and may contact substantially the entire bonding surface of the first substrate. The bonding layer may include a metal.

In an aspect, a system and method for assembling a semiconductor device on a receiving surface of a destination substrate is disclosed. In another aspect, a system and method for assembling a semiconductor device on a destination substrate with topographic features is disclosed. In another aspect, a gravity-assisted separation system and method for printing semiconductor device is disclosed. In another aspect, various features of a transfer device for printing semiconductor devices are disclosed. In yet another aspect, a method and structure for heat-assisted micro-transfer printing is disclosed.

A first substrate may be bonded to a second substrate in a method that may include providing the first substrate, providing a second substrate, providing a bonding layer precursor, positioning the bonding layer precursor between the first substrate and the second substrate, and bonding the first substrate to the second substrate by heating the bonding layer precursor to form a bonding layer. The first substrate may include a bonding surface, and a geometry of the bonding surface of the first substrate may include a plurality of microchannels. The second substrate may include a complementary bonding surface and the bonding layer precursor may include a metal. The bonding layer may fill the microchannels of the first substrate and may contact substantially the entire bonding surface of the first substrate.

A method for bonding a first substrate to a second substrate including the steps of: making contact of a first contact area of the first substrate with a second contact area of the second substrate, which second area is aligned parallel to the first contact area, as a result of which a common contact area is formed; and producing a bond interconnection between the first substrate and the second substrate outside the common contact area. The invention also relates to a corresponding device and a substrate composite of a first substrate and a second substrate, in which a first contact area of the first substrate with a second contact area of the second substrate, which second area is aligned parallel to the first contact area, forms a common contact area, outside the common contact area there being a bond interconnection between the first substrate and the second substrate.

A method for producing a material-bonding connection between a semiconductor chip and a metal layer is disclosed. For this purpose, a semiconductor chip, a metal layer, which has a chip mounting portion, and also a bonding medium containing a metal powder are provided. The metal powder is sintered in a sintering process. In this case, throughout a prescribed sintering time, the prescribed requirements are met, that the bonding medium is arranged between the semiconductor chip and the metal layer and extends right through from the semiconductor chip to the metal layer, that the semiconductor chip and the metal layer are pressed against one another in a pressing-pressure range that lies above a minimum pressing pressure, that the bonding medium is kept in a temperature range that lies above a minimum temperature and that a sound signal is introduced into the bonding medium.