A method of wafer dicing includes singulating dies from a semiconductor wafer. The method further includes depositing a metal layer on back sides of the singulated dies, wherein a portion of the metal layer continues beyond the backs sides of the singulated dies to deposit at least partially on lateral sides of the singulated dies. A packaged die includes a semiconductor die and a metal outer layer deposited on the back side of the semiconductor die and on a portion of the lateral side of the semiconductor die nearest the back side. The packaged die further includes a substrate mounted to the back side of the semiconductor die a die attach material that bonds the substrate to the metal outer layer deposited on the semiconductor die, wherein the metal outer layer and the die attach material surround the back edge of the semiconductor die.

A wafer-to-wafer semiconductor device includes a first wafer substrate having a first bonding layer formed on a first bulk substrate layer. A second wafer substrate includes a second bonding layer formed on a second bulk substrate layer. The second bonding layer is bonded to the first bonding layer to define a bonding interface. At least one of the first wafer substrate and the second wafer substrate includes a crack-arresting film layer configured to increase a bonding energy of the bonding interface.

A method for manufacturing connection structure, the method includes arranging conductive particles and a first composite on a first electrode located on a first surface of a first member, arranging a second composite on the first electrode and a region other than the first electrode of the first surface, arranging the first surface and a second surface of a second member where a second electrode is located, so that the first electrode and the second electrode are opposed to each other, pressing the first member and the second member, and curing the first composite and the second composite.

A device is disclosed which includes at least one integrated circuit die, at least a portion of which is positioned in a body of encapsulant material, and at least one conductive via extending through the body of encapsulant material.

A device with thermal control is presented. In some embodiments, the device includes a plurality of die positioned in a stack, each die including a chip, interconnects through a thickness of the chip, metal features of electrically conductive composition connected to the interconnects on a bottom side of the chip, and adhesive or underfill layer on the bottom side of the chip. At least one thermally conducting layer, which can be a pyrolytic graphite layer, a layer formed of carbon nanotubes, or a graphene layer, is coupled between a top side of one of the plurality of die and a bottom side of an adjoining die in the stack. A heat sink can be coupled to the thermally conducting layer.

A method for manufacturing connection structure, the method includes arranging conductive particles and a first composite on a first electrode located on a first surface of a first member, arranging a second composite on the first electrode and a region other than the first electrode of the first surface, arranging the first surface and a second surface of a second member where a second electrode is located, so that the first electrode and the second electrode are opposed to each other, pressing the first member and the second member, and curing the first composite and the second composite.

A bonding method of a first member includes arranging an activated front surface of a first member and an activated front surface of a second member so as to face each other with a back surface of the first member attached to a sheet, pushing a back surface of the first member through the sheet to closely attach the activated front surface of the first member and the activated front surface of the second member, and stripping the sheet from the back surface of the first member while maintaining a state in which the activated front surface of the first member is closely attached to the activated front surface of the second member.

A device and method of manufacture is provided that utilize a dummy pad feature adjacent contact pads. The contact pads may be contact pads in an integrated fan-out package in which a molding compound is placed along sidewalls of a die and the contact pads extend over the die and the molding compound. The contact pads are electrically coupled to the die using one or more redistribution layers. The dummy pad features are electrically isolated from the contact pads. In some embodiments, the dummy pad features partially encircle the contact pads and are located in a corner region of the molding compound, a corner region of the die, and/or an interface region between an edge of the die and the molding compound.

A bonding member (10) includes surface-processed silver surfaces (11a, 11b).

A bonding member (10) includes surface-processed silver surfaces (11a, 11b).