An inductively coupled plasma (ICP) generator includes a torch, an induction device, and an ignition system. The induction device is configured to be supplied with radio-frequency electric current to inductively energize a plasma gas flowed through the torch to produce a plasma. The ignition system includes a high voltage source. The ignition system is configured to: direct a flow of an ignition gas onto the torch; and generate an ignition electric arc in the ignition gas flow using the high voltage source; whereby the ignition electric arc is transmitted to the torch through the ignition gas flow to ionize the plasma gas in the torch.

An inductively coupled plasma (ICP) generator includes a torch, an induction device, and an ignition system. The induction device is configured to be supplied with radio-frequency electric current to inductively energize a plasma gas flowed through the torch to produce a plasma. The ignition system includes a high voltage source. The ignition system is configured to: direct a flow of an ignition gas onto the torch; and generate an ignition electric arc in the ignition gas flow using the high voltage source; whereby the ignition electric arc is transmitted to the torch through the ignition gas flow to ionize the plasma gas in the torch.

A method, apparatus and system for initiating a plasma with a low pressure inductively coupled RF plasma to dissociate one or more gases, the method including supplying one or more gases from a source to an inductively coupled plasma discharge chamber; applying RF power to the plasma discharge chamber by capacitive coupling to dissociate the one or more gases and create a plasma; preventing increased contamination from the capacitive electrodes by confining the plasma with at least one constriction acting as an improved power density device; and withdrawing the dissociated one or more gases from the plasma discharge chamber through at least one constriction.

A molecular beam epitaxy apparatus includes a radical generator for generating a radical species, a molecular beam cell for generating a molecular beam or an atomic beam, and a vacuum chamber for accommodating a substrate therein, in use, the substrate being irradiated with the radical species and the molecular beam or the atomic beam in vacuum, to thereby form, on the substrate, a crystal of a compound derived from the element of the radical species and the element of the molecular beam or the atomic beam.

A molecular beam epitaxy apparatus includes a radical generator for generating a radical species, a molecular beam cell for generating a molecular beam or an atomic beam, and a vacuum chamber for accommodating a substrate therein, in use, the substrate being irradiated with the radical species and the molecular beam or the atomic beam in vacuum, to thereby form, on the substrate, a crystal of a compound derived from the element of the radical species and the element of the molecular beam or the atomic beam.

A modified deposit-and-etch Bosch process of cyclic anisotropic etching and film deposition by gas switching. The modification of which includes depositing nucleated silicon layers as liquefied droplets of silicon instead of by passivation, and using a bias discharge to decelerate an otherwise ballistic deposition instead into a nuclei-generation cloud at the deposition site. Such is then useful in the refurbishment of gas distribution plates made of silicon.

The present invention provides an energy-efficient method and apparatus that can achieve exhaust gas abatement with a minimum use of diluent nitrogen gas. More specifically, the present invention is directed to a method and apparatus for exhaust gas abatement under reduced pressure, in which an exhaust gas supplied from an exhaust gas source via a vacuum pump is decomposed by heat of a high-temperature plasma under a reduced pressure.

Plasma spray systems comprise multiple zones wherein the energy required for different processes within the systems can be controlled independently. In some embodiments, a plasma spray system comprises a first zone wherein ionic species are generated from the target material using a first energy input, and the ionic species either combine to form a plurality of particles in the first zone, or form coatings on a plurality of input particles input into the first zone. The plasma spray system can further comprise a second zone, comprising a chamber coupled to a microwave energy source, which ionizes the plurality of particles to form a plurality of ionized particles and form a plasma jet. The plasma spray system can further comprise a third zone, comprising an electric field to accelerate the plurality of ionized particles and form a plasma spray.

Plasma spray systems comprise multiple zones wherein the energy required for different processes within the systems can be controlled independently. In some embodiments, a plasma spray system comprises a first zone wherein ionic species are generated from the target material using a first energy input, and the ionic species either combine to form a plurality of particles in the first zone, or form coatings on a plurality of input particles input into the first zone. The plasma spray system can further comprise a second zone, comprising a chamber coupled to a microwave energy source, which ionizes the plurality of particles to form a plurality of ionized particles and form a plasma jet. The plasma spray system can further comprise a third zone, comprising an electric field to accelerate the plurality of ionized particles and form a plasma spray.

A method utilising microwave plasma chemical vapour deposition (MPCVD) process of producing electronic device grade single crystal diamond comprising of: (a) selecting a diamond seed or substrate having a pre-determined orientation, (b) cleaning and/or etching of non-diamond phases and other induced surface damages from the diamond seed or substrate, whereby this step can be performed one or more times, (c) growing a layer of extremely low crystal defect density diamond surface on the cleaned/etched diamond seed or substrate, whereby this step can be performed one or more times, and (d) growing electronics device grade single crystal diamond on top of the layer of the low crystal defect density diamond surface.