Embodiments of the disclosure provide a semiconductor structure and a method for forming the same. The method includes: providing a semiconductor substrate including a plurality of active pillars arranged at intervals; etching the active pillar to form an annular groove, in which the annular groove does not expose a top surface and a bottom surface of the active pillar; and forming a first semiconductor layer in the annular groove to form the semiconductor structure; in which a band gap of the first semiconductor layer is smaller than a band gap of the active pillar.

A semiconductor structure and a method for manufacturing a semiconductor structure are provided, which relate to the technical field of semiconductors. The semiconductor structure includes a substrate and a plurality of first conductive layers. The substrate includes a plurality of first trenches extending in a first direction and a plurality of second trenches extending in a second direction. A plurality of active pillars are provided between the plurality of first trenches and the plurality of second trenches. The first direction intersects with the second direction. Each of the plurality of first conductive layers is arranged on each of sidewalls, which are arrayed in the first direction, of a respective one of the plurality of active pillars.

Provided are a semiconductor structure and a method for manufacturing the same. The semiconductor structure includes: a base; a bit line; and a semiconductor channel including a first doped region, a channel region, and a second doped region that are sequentially arranged, where the first doped region contacts the bit line, and the first doped region, the channel region, and the second doped region are doped with first-type doped ions. The channel region is further doped with second-type doped ions, enabling a concentration of majority carriers in the channel region to be less than a concentration of majority carriers in the first doped region and a concentration of majority carriers in the second doped region. The first-type doped ions are one of N-type ions or P-type ions, and the second-type doped ions are the other of N-type ions or P-type ions.

A semiconductor structure includes a substrate, a gate structure, a cover layer and a first sacrificial structure. The substrate includes discrete semiconductor channels arranged at a top of the substrate. The gate structure is disposed in a middle region of a semiconductor channel, and includes a ring structure and a bridge structure. The ring structure encircles the semiconductor channel, and the bridge structure penetrates through the semiconductor channel and extends to an inner wall of the ring structure along a penetrating direction. The cover layer is located between adjacent semiconductor channels, and includes a first communication hole. The first sacrificial structure is located on the cover layer, and includes a second communication hole. An inner sidewall of the second communication hole has an irregular shape.

A semiconductor structure and a method for manufacturing a semiconductor structure are provided. The method for manufacturing the semiconductor structure includes: a substrate is provided: a plurality of semiconductor channels arrayed in a first direction and a second direction are formed on the substrate: a plurality of bit lines extending in the first direction are formed, in which the bit lines is located in the substrate: and a plurality of word lines extending in the second direction are formed, in which two word lines adjacent to each other in the first direction are spaced apart from each other in a direction perpendicular to a surface of the substrate: and a sidewall conductive layer is formed, in which the sidewall conductive layer is located above one of the two word lines adjacent to each other, and is arranged in the same layer as the other of the two word lines.

A semiconductor device includes a substrate having one or more inner surfaces defining trenches that define an active pattern of the substrate, the trenches including a first trench and a second trench which have different widths, a device isolation layer on the substrate such that the device isolation layer at least partially fills the trenches, and a word line intersecting the active pattern. The device isolation layer includes a first isolation pattern covering a portion of the second trench, a second isolation pattern on the first isolation pattern and covering a remaining portion of the second trench, and a filling pattern filling the first trench under the word line. A top surface of the second isolation pattern is located at a higher level than a top surface of the filling pattern.

A semiconductor device and a formation method thereof are provided. The semiconductor device includes: a semiconductor substrate, where a plurality of columnar active areas are formed on the semiconductor substrate, the plurality of columnar active areas are spaced apart by a plurality of first trenches extending along a first direction and a plurality of second trenches extending along a second direction; a plurality of third trenches positioned in the semiconductor substrate at bottoms of the second trenches, where the third trenches are recessed to bottoms of the columnar active areas, and a bottom surface of a given one of the third trenches is higher than a bottom surface of the given first trench; and a plurality of metal silicide bit lines extending along the first direction in the semiconductor substrate positioned at the bottoms of the plurality of third trenches and the bottoms of the plurality of columnar active areas.

A semiconductor structure includes a base, a dielectric layer, a gate structure, and a covering layer. The base includes discrete semiconductor pillars. The semiconductor pillars are disposed at the top of the base and extend in a vertical direction. The dielectric layer covers the sidewall of the semiconductor pillar. The gate structure is disposed in the middle area of the semiconductor pillar. The gate structure includes a gate-all-around structure, the gate-all-around surrounding the semiconductor pillar. A first part of the dielectric layer is disposed between the gate structures and the semiconductor pillars. The covering layer covers the top of the semiconductor pillar and part of the sidewall close to the top. The material of the covering layer includes a boron-containing compound.

A semiconductor structure and a method for manufacturing the same are provided. The semiconductor structure includes a substrate, a gate structure and a dielectric layer. Herein, the substrate includes discrete semiconductor pillars. The semiconductor pillars are arranged at the top of the substrate and extend in a vertical direction. The substrate further includes a capacitor structure located at the top of the semiconductor pillar. The gate structure is arranged at the middle area of the semiconductor pillar and surrounds the semiconductor pillar. The dielectric layer is located between the gate structure and the semiconductor pillar, and covers the sidewall of the semiconductor pillar.

A method for fabricating a semiconductor device includes providing a substrate; forming a bit line conductive layer on the substrate and a bit line inner capping layer on the bit line conductive layer to form a bit line structure; a bit line structure; forming a bit line spacer capping layer covering the bit line structure; forming a cell contact adjacent to the bit line structure; forming a blanket pad layer on the bit line spacer capping layer and the cell contact; forming a plurality of pad openings along the blanket pad layer and extending to the bit line spacer capping layer and the bit line inner capping layer to turn the blanket pad layer into a plurality of landing pads; and selectively forming a sealing layer to form a plurality of air gaps between the bit line conductive layer and the plurality of landing pads.