A gate-all around fin double diffused metal oxide semiconductor (DMOS) devices and methods of manufacture are disclosed. The method includes forming a plurality of fin structures from a substrate. The method further includes forming a well of a first conductivity type and a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures. The method further includes forming a source contact on an exposed portion of a first fin structure. The method further comprises forming drain contacts on exposed portions of adjacent fin structures to the first fin structure. The method further includes forming a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type.

A composite film having a high dielectric permittivity engineered particles dispersed in a high breakdown strength polymer material to achieve high energy density.

Provided is a capacitor that has good bonding between the dielectric layer and the conductive layer, has a characteristic of low ESR, and keeps leak current suppressed. The capacitor contains a dielectric layer and a conductive film and is characterized in that the dielectric layer contains an organic compound and a metal compound and that the conductive film contains a conductive material and an organic compound.

An aerogel capacitor includes: a substrate including a capacitor structure including an aerogel, a dielectric layer and a conductive layer, and a support surrounding the capacitor structure; and an electrode unit including a first electrode and a second electrode provided on the substrate. The first electrode is connected to the aerogel and the second electrode is connected to the conductive layer.

A gate-all around fin double diffused metal oxide semiconductor (DMOS) devices and methods of manufacture are disclosed. The method includes forming a plurality of fin structures from a substrate. The method further includes forming a well of a first conductivity type and a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures. The method further includes forming a source contact on an exposed portion of a first fin structure. The method further comprises forming drain contacts on exposed portions of adjacent fin structures to the first fin structure. The method further includes forming a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type.

A nanoparticle composition comprising a substrate comprising a metal oxide component and an aluminum oxide component; and a metallocene olefin polymerization catalyst component coupled to the substrate is disclosed. The metal oxide component is homogenously dispersed throughout the nanocomposite composition.

A gate-all around fin double diffused metal oxide semiconductor (DMOS) devices and methods of manufacture are disclosed. The method includes forming a plurality of fin structures from a substrate. The method further includes forming a well of a first conductivity type and a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures. The method further includes forming a source contact on an exposed portion of a first fin structure. The method further comprises forming drain contacts on exposed portions of adjacent fin structures to the first fin structure. The method further includes forming a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type.

A gate-all around fin double diffused metal oxide semiconductor (DMOS) devices and methods of manufacture are disclosed. The method includes forming a plurality of fin structures from a substrate. The method further includes forming a well of a first conductivity type and a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures. The method further includes forming a source contact on an exposed portion of a first fin structure. The method further comprises forming drain contacts on exposed portions of adjacent fin structures to the first fin structure. The method further includes forming a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type.

The present invention is a film capacitor comprising a dielectric film and a metal layer, the dielectric film being a resin film obtained by stretching an unstretched film produced using a crystalline hydrogenated dicyclopentadiene ring-opening polymer, and heating the resulting stretched film, and the resin film having a softening point of 250 to 320 C., a thermal shrinkage ratio of 0.01 to 5.0% when heated at 200 C. for 10 minutes, a loss tangent (tan ) of 0.0001 to 0.0010, and a coefficient of static friction of 0.01 to 1.00. The present invention provides a film capacitor that includes a resin film as a dielectric film, the resin film exhibiting excellent heat resistance, excellent withstand voltage properties, and excellent workability.

A resin composition for use in a dielectric layer of a capacitor device or a capacitor-embedded printed circuit board is provided in which the resin composition can improve stability in capacitance and insulation properties of the capacitor device under high temperature and high humidity and ensures high adhesion of the dielectric layer to the device. The resin composition comprises a resin component and a dielectric filler. The resin component comprises an epoxy resin, an active ester resin, and an aromatic polyamide resin.