An ion generator includes an arc chamber which has a plasma generating region therein, a cathode configured to emit a thermoelectron toward the plasma generating region, a repeller which faces the cathode in an axial direction in a state where the plasma generating region is interposed between the cathode and the repeller, and a cage which is disposed to partially surround the plasma generating region at a position between an inner surface of the arc chamber and the plasma generating region.

A system and method for varying the temperature of a faceplate for an ion source is disclosed. The faceplate is held against the chamber walls of the ion source by a plurality of fasteners. These fasteners may include tension springs or compression springs. By changing the length of the tension spring or compression spring when under load, the spring force of the spring can be increased. This increased spring force increases the compressive force between the faceplate and the chamber walls, creating improved thermal conductivity. In certain embodiments, the length of the spring is regulated by an electronic length adjuster. This electronic length adjuster is in communication with a controller that outputs an electrical signal indicative of the desired length of the spring. Various mechanisms for adjusting the length of the spring are disclosed.

A system and method for varying the temperature of a faceplate for an ion source is disclosed. The faceplate is held against the chamber walls of the ion source by a plurality of fasteners. These fasteners may include tension springs or compression springs. By changing the length of the tension spring or compression spring when under load, the spring force of the spring can be increased. This increased spring force increases the compressive force between the faceplate and the chamber walls, creating improved thermal conductivity. In certain embodiments, the length of the spring is regulated by an electronic length adjuster. This electronic length adjuster is in communication with a controller that outputs an electrical signal indicative of the desired length of the spring. Various mechanisms for adjusting the length of the spring are disclosed.

A collision ionization source is disclosed herein. An example source includes an ionization region arranged to receive a gas and a charged particle beam, the charged particle beam to ionize at least some of the gas, and a supply duct arranged to provide the gas to the ionization region, the supply duct having a non-uniform height decreasing from an input orifice to an output orifice, the output orifice arranged adjacent to the ionization region.

An ion source with a crucible is disclosed. In some embodiments, the crucible is disposed in one of the ends of the ions source, opposite the cathode. In other embodiments, the crucible is disposed in one of the side walls. A feed material, which may be in solid form is disposed in the crucible. In certain embodiments, the feed material is sputtered by ions and electrons in the plasma. In other embodiments, the feed material is heated so that it vaporizes. The ion source may be oriented so that the crucible is disposed in the lowest wall so that gravity retains the feed material in the crucible.

Ion generators for ion implanters are provided. The ion generator for an ion implanter includes an ion source arc chamber including an arc chamber housing and a thermal electron emitter coupled to the arc chamber housing. In addition, the thermal electron emitter includes a filament and a cathode, and the cathode has a solid top portion made of a work function modified conductive material including tungsten (W) and a work function modification metal.

An assembly present in an ion source for supporting an arc chamber upon a base plate includes a first arc support plate, a first screw, and a second screw. The first screw passes through a smooth through-hole in an arm of the first arc support plate and extends into a bore in the base plate. The second (or adjustable) screw passes through a threaded through-hole in an arm of the first arc support plate and engages an upper surface of the base plate itself, and can be used to change the altitude and angle of the first arc support plate relative to the base plate. This adjustment ability improves the beam quality of the ion source.

To provide an ion gun of a penning discharge type capable of achieving a milling rate which is remarkably higher than that in the related art, an ion milling device including the same, and an ion milling method. An ion generation unit includes a cathode that emits electrons, an anode that is provided within the ion generation unit and has an inner diameter of 5.2 mm or less, and magnetic-field generation means using a permanent magnet of which a maximum energy product ranges from 110 kJ/m.sup.3 to 191 kJ/m.sup.3.

A filament includes first and second end portions between which a connecting portion is arranged. The first and second end portions are electrically connected to a power supply device. The first end portion is bent with respect to the second end portion through the connecting portion. A cross-sectional dimension of the bent connecting portion is the same as cross-sectional dimensions of the first and second end portions. Also disclosed are an ionization chamber and an ion-implantation apparatus. The cross-sectional dimension of the filament is uniform. The resistance of respective portions of the filament is the same. The number of the hot electrons generated at respective portions by powering the filament is the same. The hot electrons and ion-source gas collide to generated plasma. The plasma concentration around the filament is uniform, to avoid the emergence of corrosion of the filament at certain portion caused by an over high plasma concentration.

The invention relates to a novel ion source, which uses method for the production of highly charged ions in the local ion traps created by an axially symmetric electron beam in the thick magnetic lens. The highly charged ions are produced in the separate local ion traps, which are created as a sequence of the focuses (F.sub.1, F.sub.2, and F.sub.3) of the electron beam (EB) rippled in the magnetic field (B(z)). Since the most acute focus is called the main one, the ion source is classified as main magnetic focus ion source (MaMFIS/T), which can also operate in the trapping regime. The electron current density in the local ion traps can be much greater than that in the case of Brillouin flow. For the ion trap with length of about 1 mm, the average electron current density of up to the order of 100 kA/cm.sup.2 can be achieved. Thus it allows one to produce ions in any charge state for all elements of the Periodic Table. In order to extract the ions, geometry of the electron beam is changed to a relatively smooth electron beam by setting the potential of the focusing electrode (W) of the electron gun negative with respect to the potential of the cathode (C).