Methods for selective deposition, and structures thereof, are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. A passivation layer is selectively formed from vapor phase reactants on the first surface while leaving the second surface without the passivation layer. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the passivation layer. The first surface can be metallic while the second surface is dielectric, or the second surface is dielectric while the second surface is metallic. Accordingly, material, such as a dielectric, can be selectively deposited on either metallic or dielectric surfaces relative to the other type of surface using techniques described herein. Techniques and resultant structures are also disclosed for control of positioning and shape of layer edges relative to boundaries between underlying disparate materials.

Included are forming, on a semiconductor substrate, an insulation film having an opening section where an opening is formed, forming a first resist on the insulation film while avoiding the opening section and the semiconductor substrate exposed via the opening section, forming a first metal on the opening section, the semiconductor substrate exposed via the opening section, and the first resist by a vapor deposition method or a sputtering method, removing, by a lift-off method, the first resist and the first metal on the first resist, forming, on the insulation film, a second resist allowing the first metal to be exposed, causing the first metal to grow a second metal by an electroless plating method, and removing the second resist, where these processings are included in the listed order.

A semiconductor device manufacturing method includes: forming an electrode including an Ni layer and an Au layer successively stacked on a semiconductor layer; forming a Ni oxide film by performing heat treatment to the electrode at a temperature of 350° C. or more to deposit Ni at least at a part of a surface of the Au layer and to oxidize the deposited Ni; and forming an insulating film in contact with the Ni oxide film and containing Si.

A method of manufacturing a backplane for a display device includes forming an insulation layer on a substrate, forming a pad electrode layer on the insulation layer, forming a photoresist pattern on the pad electrode layer in the pad region, etching the pad electrode layer and a portion of the insulation layer by the photoresist pattern as an etch-stop layer so as to simultaneously form a pad electrode and a side protection layer, the side protection layer covering a sidewall of the pad electrode, and stripping the photoresist pattern.

A hard mask structure includes a tungsten-based conductive layer, a carbon-based hard mask layer and a nitride layer. The carbon-based hard mask layer is formed over the Tungsten-based conductive layer. The nitride layer is formed between the tungsten-based conductive layer and the carbon-based hard mask layer to enhance adhesion therebetween.

A field effect transistor includes: a semiconductor region including a first inactive region, an active region, and a second inactive region arranged side by side in a first direction; a gate electrode, a source electrode, and a drain electrode on the active region; a gate pad on the first inactive region; a gate guard on and in contact with the semiconductor region, the gate guard being apart from the gate pad and located between an edge on the first inactive region side of the semiconductor region and the gate pad; a drain pad on the second inactive region; a drain guard on and in contact with the semiconductor region, the drain guard being apart from the drain pad and located between an edge on the second inactive region side of the semiconductor region and the drain pad; and a metal film electrically connected to the gate guard.

A semiconductor device is formed by providing a semiconductor package including a shielding layer and forming a slot in the shielding layer using a laser. The laser is turned on and exposed to the shielding layer with a center of the laser disposed over a first point of the shielding layer. The laser is moved in a loop while the laser remains on and exposed to the shielding layer. Exposure of the laser to the shielding layer is stopped when the center of the laser is disposed over a second point of the shielding layer. A distance between the first point and the second point is approximately equal to a radius of the laser.

A gallium oxide Schottky barrier diode with negative beveled angle terminal and a production method thereof are provided. The production method includes four steps. In the first step, a photoresist layer with a preset pattern is formed on a gallium oxide epitaxial layer, where the gallium oxide epitaxial layer is formed on an upper surface of a gallium oxide substrate. In the second step, first electrode layer is formed on the gallium oxide epitaxial layer. In the third step, the gallium oxide substrate is rotated and the gallium oxide epitaxial layer is etched. In the fourth step, a second electrode layer is formed on the lower surface of the gallium oxide substrate.

A method of manufacturing a semiconductor device includes: forming, on or above a GaN-based semiconductor layer, an electron beam resist containing chlorine; forming, in the electron beam resist, a first opening that exposes a portion of a surface of the semiconductor layer; forming a film of a shrink agent that covers a sidewall surface of the first opening; and forming, in a state in which the sidewall surface is covered by the film of the shrink agent, a Ni film that contacts the semiconductor layer through the first opening.

A semiconductor device is formed by providing a semiconductor package including a shielding layer and forming a slot in the shielding layer using a laser. The laser is turned on and exposed to the shielding layer with a center of the laser disposed over a first point of the shielding layer. The laser is moved in a loop while the laser remains on and exposed to the shielding layer. Exposure of the laser to the shielding layer is stopped when the center of the laser is disposed over a second point of the shielding layer. A distance between the first point and the second point is approximately equal to a radius of the laser.