A multi-spray RRC process with dynamic control to improve final yield and further reduce resist cost is disclosed. In one embodiment, a method, includes: dispensing a first layer of solvent on a semiconductor substrate while spinning at a first speed for a first time period; dispensing the solvent on the semiconductor substrate while spinning at a second speed for a second time period so as to transform the first layer to a second layer of the solvent; dispensing the solvent on the semiconductor substrate while spinning at a third speed for a third time period so as to transform the second layer to a third layer of the solvent; dispensing the solvent on the semiconductor substrate while spinning at a fourth speed for a fourth time period so as to transform the third layer to a fourth layer of the solvent; and dispensing a first layer of photoresist on the fourth layer of the solvent while spinning at a fifth speed for a fifth period of time.

An imprint apparatus that forms a pattern of an imprint material on a substrate using a mold having a pattern formation area. The imprint apparatus includes a mold measurement unit configured to measure a position of the pattern formation area of the mold, a light modulation element configured to control an intensity distribution of irradiation light applied to the substrate, an irradiation light measurement unit configured to measure a position of the irradiation light, and a control unit configured to control the position of the irradiation light with respect to the position of the pattern formation area based on a measurement result of the position of the pattern formation area by the mold measurement unit and a measurement result of the position of the irradiation light by the irradiation light measurement unit.

Photoresist pattern trimming compositions comprise a polymer, an aromatic sulfonic acid, and an organic-based solvent system, wherein the polymer comprises polymerized units of general formulas (I) and (II): ##STR00001##
wherein: X independently represents a halogen atom; Q represents a single bond, —O—, or —C(O)O—; R.sub.1 independently represents hydrogen, a halogen atom, C1-C12 alkyl or C1-C12 fluoroalkyl; R.sub.2 represents C1-C3 alkyl or C1-C3 fluoroalkyl; and m is an integer from 0 to 4; and wherein the polymerized units of general formula (I) are present in the polymer in an amount of 10 to 90 mol % and the polymerized units of general formula (II) are present in the polymer in an amount from 10 to 60 mol %, based on total polymerized units of the polymer. The photoresist pattern trimming compositions and their use in pattern formation methods find particular applicability in the manufacture of semiconductor devices.

The present disclosure provides a method for forming semiconductor structure and a semiconductor structure. The method for forming semiconductor structure includes: providing a semiconductor base with a substrate and a first oxide material layer; wherein the first oxide material layer is arranged on the substrate, the first oxide material layer includes a first region and a second region located at edge of the first region; patterning and etching the first oxide material layer; wherein oxide line structures are formed, and an annular empty slot structure is formed; refilling a second material; wherein the second material in the first region forms a plurality of isolation line structures, and the second material in the second region forms an annular dummy isolation layer; removing the oxide line structure by patterning and etching, and forming through hole structures; and forming a conductive material layer in the through hole structures.

Embodiments disclosed herein include a lithographic patterning system and methods of using such a system to form a microelectronic device. In an embodiment, the lithographic patterning system includes an actinic radiation source, a stage where a major surface of the stage is for supporting a substrate with a resist layer, and a first prism over the stage, where the first prism comprises a first face that is substantially parallel to the major surface of the stage. In an embodiment, the lithographic patterning system further comprises a second prism, where the second prism comprises a first surface that is substantially parallel to a second surface of the first prism, and where a second surface of the second prism has a reflective coating.

A method for manufacturing a semiconductor device includes obtaining a first image of a fluid dispense nozzle using a first camera, the fluid dispense nozzle configured to dispense fluid on a semiconductor substrate, obtaining a second image of the fluid dispense nozzle using a second camera, the second image having a higher resolution than the first image, determining a width of the fluid dispense nozzle at multiple intervals along the fluid dispense nozzle and a width of a spray pattern of a fluid being dispensed from the fluid dispense nozzle at multiple intervals along the spray pattern, fitting a first straight line to a series of data points representing a plurality of widths of the intervals along the fluid dispense nozzle and a plurality of widths of the intervals along the spray pattern, determining a first slope of the first straight line, and determining a condition of the spray pattern and the fluid dispense nozzle based on the first slope.

A bubble detection method includes flowing a fluid through a conduit containing at least one bipolar electrode, applying an electric field across the fluid in the conduit, and detecting a presence of a bubble in the fluid when the bubble flows around or through the bipolar electrode by detecting a current or voltage output from the at least one bipolar electrode.

A device package and a method of forming a device package are described. The device package includes a dielectric on a conductive pad, and a first via on a first seed on a top surface of the conductive pad. The device package further includes a conductive trace on the dielectric, and a second via on a second seed layer on the dielectric. The conductive trace connects to the first via and the second via, where the second via connects to an edge of the conductive trace opposite from the first via. The dielectric may include a photoimageable dielectric or a buildup film. The device package may also include a seed on the dielectric prior to the conductive trace on the dielectric, and a second dielectric on the dielectric, the conductive trace, and the first and second vias, where the second dielectric exposes a top surface of the second via.

There are provided a lithography method capable of selecting best resist and a semiconductor device manufacturing method and exposure equipment based on the lithography method. The lithography method includes estimating a shape of a virtual resist pattern based on a multi-scale simulation for resist, forming a test resist pattern by performing exposure on selected resist based on the simulation result, comparing the test resist pattern with the virtual resist pattern, and forming a resist pattern on an object to be patterned by using the resist when an error between the test resist pattern and the virtual resist pattern is in an allowable range.

An adhesion promoter composition comprising at least one of the following compounds: (a) a cyclic compound having the formula: ##STR00001##
(b) a non-cyclic compound having the formula: ##STR00002##
wherein R.sub.1 and R.sub.2 each independently represents a non-photoactive phenyl, a photoactive phenyl or a C.sub.1-C.sub.4 alkyl; R.sub.3 represents a non-photoactive phenyl; R.sub.4 represents a photoactive phenyl; W represents Si or Ge; n represents an integer of value greater than 1;
m represents an integer between 0 and 1.