According to one embodiment, a method for manufacturing a semiconductor device includes forming a hole extending in a first direction in a workpiece. The method includes forming a first film on an upper surface of the workpiece and an upper portion of a side wall of the hole. The method includes forming a second film on the first film. The method includes removing portions of the first and second films from the upper surface of the workpiece so that at least a part of the first and second films formed on the upper portion remain. The method includes removing at least a part of a portion of the workpiece which is exposed through the hole using a second etchant. An etching rate of the first etchant for the first film is higher than an etching rate of the first etchant for the second film.

Methods and systems for selective silicon anti-reflective coating (SiARC) removal are described. An embodiment of a method includes providing a substrate in a process chamber, the substrate comprising: a resist layer, a SiARC layer, a pattern transfer layer, and an underlying layer. Such a method may also include performing a pattern transfer process configured to remove the resist layer and create a structure on the substrate, the structure comprising portions of the SiARC layer and the pattern transfer layer. The method may additionally include performing a modification process on the SiARC layer of the structure, the modification converting the SiARC layer into a porous SiARC layer. Further, the method may include performing a removal process of the porous SiARC layer of the structure, wherein the modification and removal processes of the SiARC layer are configured to meet target integration objectives.

This disclosure teaches a method for producing a nano metal mesh. A brittle layer can be deposited onto a flexible substrate, the brittle layer having a thickness on the flexible substrate. The flexible substrate can be bent to produce a plurality of gaps on the brittle material. A material can be deposited at the surface of the flexible substrate filling the gaps of the brittle layer. Then, the brittle layer can be etched from the flexible substrate using an etchant, a nano metal mesh formed by the material previously in the gaps. The disclosure also teaches a nano metal mesh made using this method.

Provided are a cleaning method and cleaning device for cleaning with micro/nano-bubbles, with which a simple method of spraying a treatment solution containing micro/nano-bubbles onto a substrate to be processed makes it possible to efficiently and reliably peel off residual resist or remove contaminants from the substrate, while reducing an environmental load. This cleaning method is characterized in that, with respect to a substrate to be treated to which a resist film has adhered onto the substrate or a substrate to be treated to which the surface thereof has been contaminated with a metal or metal compounds, the resist film is peeled off or the metals or metal compounds are removed by spraying onto the substrate to be treated a treatment solution containing gaseous micro/nano-bubbles and having a temperature maintained at 30 C. to 90 C., the mean particle size of the micro/nano-bubbles when measured by an ice embedding method using a cryo-transmission electron microscope being 100 nm or smaller, preferably 30 nm or smaller, and also preferably the density of such bubbles being 10.sup.8 or more bubbles per 1 mL.

An array substrate and a manufacturing method. The method includes: patterning the first metal layer through a first mask to form a gate electrode and a first conductive layer which are disposed at an interval; patterning the semiconductor and the gate insulation layer through a second mask to form a through hole for revealing the first conductive layer; patterning the semiconductor layer through the gate electrode and the first conductive layer to form a first channel and a second channel region which are disposed at an interval; patterning the second metal layer through a third mask to form a source electrode, a drain electrode and a second conductive layer which are disposed at intervals; wherein, the second conductive layer is contacted with the first conductive layer through the through hole. Accordingly, the gate insulation and the semiconductor layer are patterned through one mask to reduce the production cost.

Laser lift-off methods are described in which optical flatness is provided on the back side of a temporary substrate using either an optical layer or optical liquid. A laser is directed through the optical layer or optical liquid and a back side of the temporary substrate to decompose a portion of a process layer supported on a front side of the temporary substrate, followed by separation of the process layer and the temporary substrate.

A method of manufacturing a semiconductor device, the method may include: forming a SOG film on a wafer, the wafer including a semiconductor substrate and a polyimide film exposed on a surface of the wafer, and the SOG film being formed so as to cover the polyimide film; applying a protection tape on a surface of the SOG film; processing the wafer on which the protection tape is applied; and peeling the protection tape from the wafer.

Flexible electrical devices comprising electrode layers on softening polymers and methods of manufacturing such devices, including lift-off processes for forming electrodes on softening polymers, processes for forming devices with a patterned double softening polymer layer, and solder reflow processes for forming electrical contacts on softening polymers.

A III-nitride-based semiconductor device is provided. The III-nitride semiconductor device includes a silicon substrate having a surface with a periodic array of recesses formed therein. A discontinuous insulating layer is formed within each recess of the periodic array of recesses such that a portion of the silicon substrate surface between adjacent recesses is free from coverage of the discontinuous insulating layer. A first epitaxial III-nitride semiconductor layer is formed over the silicon substrate with the periodic array of recesses and discontinuous insulating layer formed thereon. A second III-nitride semiconductor layer is disposed over the first III-nitride semiconductor layer and has a bandgap greater than a bandgap of the first III-nitride semiconductor layer. At least one source and at least one drain are disposed over the second III-nitride semiconductor layer. A gate is also disposed over the second III-nitride semiconductor layer between the source and the drain.

This disclosure teaches a method for producing a nano metal mesh. A brittle layer can be deposited onto a flexible substrate, the brittle layer having a thickness on the flexible substrate. The flexible substrate can be bent to produce a plurality of gaps on the brittle material. A material can be deposited at the surface of the flexible substrate filling the gaps of the brittle layer. Then, the brittle layer can be etched from the flexible substrate using an etchant, a nano metal mesh formed by the material previously in the gaps. The disclosure also teaches a nano metal mesh made using this method.