A substrate processing apparatus can suppress particle generation on a substrate, and can reduce a consumption amount of a processing liquid. A substrate processing apparatus 1 includes a processing chamber 30 having a processing space 31 in which a substrate W is processed; a vaporizing tank 60, configured to store the processing liquid therein, having a vaporization space 61 in which the stored processing liquid is allowed to be vaporized; a decompression driving unit 70 configured to decompress the vaporization space 61; and a control unit 18. The control unit 18 vaporizes the processing liquid into the processing gas by decompressing the vaporization space 61 without through the processing space 31, and then, vaporizes the processing liquid into the processing gas by decompressing the vaporization space 61 through the processing space 31, and supplies an inert gas into the vaporization space 61.

A liquid processing apparatus includes: a tank configured to store a processing liquid supplied from a processing liquid supply source; a circulation passage connected to the tank; a pump installed at the circulation passage; a plurality of liquid processors configured to perform liquid processing on a substrate; and a plurality of supply passages configured to supply the processing liquid to the plurality of liquid processors respectively, wherein the circulation passage includes a main passage portion provided with the pump, and a first branch passage portion and a second branch passage portion branching from the main passage portion, and the processing liquid flowing out from the tank passes through the main passage portion, then flows into the first branch passage portion and the second branch passage portion, and then returns to the tank through the first branch passage portion and the second branch passage portion.

Embodiments of the present disclosure provide a temperature change rate control device, applied to a process chamber of a semiconductor process apparatus, including a temperature monitor unit, a controller, a gas inflation mechanism, and a gas extraction mechanism. The temperature monitor unit is configured to obtain a temperature of a wafer in the process chamber in real time. The controller is configured to calculate a temperature change rate of the wafer according to the temperature obtained by the temperature monitor unit. The gas inflation mechanism communicates with the process chamber. The gas extraction mechanism communicates with the process chamber. When the temperature change rate is outside a predetermined temperature change rate range, a first control signal is sent to the gas inflation mechanism, and/or a second control signal is sent to the gas extraction mechanism to control the temperature change rate within the temperature change rate range.

A gas processing furnace according to the present invention includes: a heater body filled with an electric heating element; and a tubular gas passage passing through the heater body. The gas processing furnace includes: a block-like heater body extending in the up-down direction and filled with the electric heating element; gas passages passing through the heater body in the up-down direction, the gas passages being consecutively disposed or extended in the front-back direction, the gas passages being arranged so as to form a plurality of arrays parallel to each other in the right-left direction, in a plan view; and a headbox mounted at an upper end portion of the heater body and configured to allow the gas passages to communicate with each other via a communication space formed inside the headbox.

Gas boxes for providing semiconductor processing gases are provided that incorporate a cross-flow ventilation system that may effectively remove potentially leaking gases from within the gas box at significantly lower volumetric flow rates than are possible with conventional gas box ventilation systems.

A system includes a plurality of spindle arms located above a plurality of stations in a processing chamber to transport a semiconductor substrate between the stations. The spindle arms reside in the processing chamber during processing of the semiconductor substrate. The system comprises first gas lines arranged below the stations to supply a purge gas. The system comprises second gas lines extending upwards from the first gas lines to supply the purge gas to the spindle arms during the processing of the semiconductor substrate in the processing chamber.

Described herein is a technique capable of suppressing generation of particles by removing by-products in a groove of a high aspect ratio. According to one aspect of the technique, there is provided a substrate processing apparatus including: a process chamber in which a substrate is processed; and a substrate support provided in the process chamber and including a plurality of supports where the substrate is placed, wherein the process chamber includes a process region where a process gas is supplied to the substrate and a purge region where the process gas above the substrate is purged, and the purge region includes a first pressure purge region to be purged at a first pressure and a second pressure purge region to be purged at a second pressure higher than the first pressure.

According to one aspect of a technique the present disclosure, there is provided a processing apparatus including: an inner tube provided with a substrate accommodating region in which substrates are accommodated along an arrangement direction; an outer tube provided outside the inner tube; gas supply ports provided on a side wall of the inner tube along the arrangement direction; first exhaust ports provided on the side wall of the inner tube along the arrangement direction; a second exhaust port provided at a lower end portion of the outer tube; and a gas guide for controlling a flow of gas in an annular space between the inner tube and the outer tube and including a first fin near a lowermost first exhaust port among the first exhaust ports that is closest to the second exhaust port in a space between the lowermost first exhaust port and the second exhaust port.

A fluid supply device and a fluid supply method capable of stably supplying a supercritical fluid includes a fluid supply device for supplying a fluid in a liquid state before being changed to a supercritical fluid toward a processing chamber. The fluid supply device comprises a condenser that condenses and liquefies a fluid in a gas state, a tank that stores the fluid condensed and liquefied by the condenser, a pump that pressure-feeds the liquefied fluid stored in the tank toward the processing chamber, and a heating means provided to a flow path communicating with a discharge side of the pump and for partially changing the liquid in the flow path to a supercritical fluid.

The present disclosure describes a wafer cooling/heating system that includes a load-lock and a thermo module. The load-lock uses a level stream design to improve temperature uniformity across one or more wafers during a cooling/heating process. The load-lock can include (i) a wafer holder configured to receive wafers at a front side of the load-lock; (ii) a gas diffuser with one or more nozzles along a back side of the load-lock, a side surface of the load-lock, or a combination thereof; and (iii) one or more exhaust lines. Further, the thermo module can be configured to control a temperature of a gas provided to the load-lock.