Methods and systems for reducing substrate particle scratching using machine learning are provided. A machine learning model is trained to predict process recipe settings for a substrate temperature control process to be performed for a current substrate at a manufacturing system. First training data and second training data are generated for the machine learning model. The first training data includes historical data associated with prior process recipe settings for a prior substrate temperature control process performed for a prior substrate at a prior process chamber. The second training data is associated with a historical scratch profile of one or more surfaces of the prior substrate after performance of the prior substrate temperature control process according to the prior process recipe settings. The first training data and the second training data are provided to train the machine learning model to predict which process recipe settings for the substrate temperature control process to be performed for the current substrate correspond to a target scratch profile for one or more surfaces of the current substrate.

A vaporizer includes a tank in which liquid material is heated to generate gas, a cabinet which houses the tank, and a conduit which supplies the gas to the outside of the cabinet. The vaporizer also includes a flow rate measuring means which measures a flow rate of the gas flowing through said conduit, and a heater plate which heats the conduit. The cabinet comprises a detachable panel that is a panel which can be removed. A first support member is fixed directly or indirectly to said cabinet at a position other than said detachable panel, the flow rate measuring means is supported by said first support member, and the heater plate is supported between said flow rate measuring means and said detachable panel by said first support member.

A controller for adjusting a height of an edge ring in a substrate processing system includes an edge ring wear calculation module configured to receive at least one input indicative of one or more erosion rates of the edge ring, calculate at least one erosion rate of the edge ring based on the at least one input, and calculate an amount of erosion of the edge ring based on the at least one erosion rate. An actuator control module is configured to adjust the height of the edge ring based on the amount of erosion as calculated by the edge ring wear calculation module.

A transfer printing method and a transfer printing apparatus. The transfer method includes: transferring a plurality of devices formed on an original substrate to a transfer substrate; obtaining first position information of positions of the plurality of devices on the transfer substrate; obtaining second position information of corresponding positions, on a target substrate, of devices to be transferred; comparing the first position information with the second position information to obtain first target position information recording a first transfer position; and aligning the transfer substrate with the target substrate and performing a site-designated laser irradiation on at least part of devices on the transfer substrate corresponding to the first transfer position, simultaneously, according to the first target position information, so as to transfer the at least part of the devices from the transfer substrate to the target substrate.

A processing method of a workpiece used when the workpiece is processed is provided. The processing method of a workpiece includes a disposing step of disposing the workpiece in a gas containing a substance that generates an active species that reacts with the workpiece, a measurement step of measuring the distribution of the thickness of the workpiece disposed in the gas, and a laser beam irradiation step of irradiating the workpiece in the gas with a laser beam of which the power is adjusted based on the distribution of the thickness measured in the measurement step. In the laser beam irradiation step, the removal amount by which a region irradiated with the laser beam in the workpiece is removed by the active species is controlled by irradiating the workpiece with the laser beam of which the power is adjusted.

According to one embodiment, a polishing apparatus includes a holder for holding a polishing pad for polishing a surface of a substrate. A plurality of pressing members are configured to press a back surface side of the polishing pad while held by the holder. A driving unit is configured to selectively move pressing members in a direction towards the surface of the substrate so as to press the back surface side of the polishing pad.

A cleaning device includes: a plurality of rollers that hold a peripheral edge part of a substrate; a rotation driving unit that rotates the substrate by rotationally driving the plurality of rollers; a cleaning member that abuts on the substrate and cleans the substrate; a cleaning liquid supply nozzle that supplies a cleaning liquid to the substrate; a microphone that detects a sound generated when a notch of the peripheral edge part of the substrate hits the plurality of rollers; and a rotation speed calculation unit that calculates a rotation speed of the substrate on the basis of the sound detected by the microphone.

An apparatus for inspecting a semiconductor substrate includes a rotatable base configured to support a substrate, and a nozzle arm includes a nozzle and a light monitoring device. The light monitoring device includes a laser transmitter and an array of light sensors arranged in the nozzle arm and facing the substrate. The light monitoring device is configured to transmit a laser pulse towards the substrate, wherein the laser pulse impinges on the substrate, receive a reflected laser pulse from the substrate, calculate whether one or more light sensors received the laser pulse, and calculate a distance between the light monitoring device and the substrate using the turnaround time for determining a process quality on the substrate.

The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a chamber providing an inner space; a fluid supply unit configured to supply a treating fluid to the inner space; and a fluid exhaust unit configured to exhaust the treating fluid from the inner space, and wherein the fluid exhaust unit includes: an exhaust line connected to the chamber; and a pressure adjusting member installed at the exhaust line and configured to maintain a pressure of the inner space to a set pressure, and wherein the fluid supply unit includes: a fluid supply source; and a supply line provided between the fluid supply source and the chamber, and wherein at the supply line or the exhaust line a flow rate measuring member configured to measure a flow rate per unit time of the treating fluid flowing at the inner space is installed.

A temperature correction information calculating device for use with a semiconductor manufacturing apparatus is provided. The semiconductor manufacturing apparatus is configured to correct a preset temperature in accordance with an accumulated film thickness on an inner wall of the semiconductor manufacturing apparatus, control a temperature by using a heater such that the temperature approaches the corrected preset temperature, and perform a deposition process on an object. The temperature correction information calculating device includes a memory, and a processor coupled to the memory and configured to store a temperature correction value for correcting the preset temperature, obtain first heater power applied to the heater, predict second heater power by adding, to the first heater power, a variation of heater power due to a preset temperature change, and correct the temperature correction value based on the predicted second heater power. The first heater power is included in log information.