A control device includes a calculation unit generating control information for an epitaxial growth apparatus; and a storage unit storing measurement values for an epitaxial film formed by the epitaxial growth apparatus and measurement values for epitaxial films formed by a plurality of other epitaxial growth apparatuses that are provided in the same production line as the epitaxial growth apparatus that needs new control. The calculation unit generates and outputs information for controlling at least one of the supply time of a source gas and the flow rate of a dopant gas in the epitaxial growth apparatus based on the measurement values for the epitaxial film formed by the epitaxial growth apparatus that needs new control and the measurement values of the epitaxial films formed by the other epitaxial growth apparatuses in the same production line that are in operation concurrently with the epitaxial growth apparatus.

An exemplary method of monitoring a bath process includes processing a first wafer by submerging the first wafer within a bath solution; capturing a video of the bath solution containing the first wafer during a first time interval; analyzing the video based on intensity of light captured in a frame of the video; and based on analyzing the video, determining a first metric of the bath solution during the first time interval.

There is provided a method of inspecting a substrate in an etching system including an imaging device, the method comprising: (A) imaging a substrate after plasma etching with the imaging device to acquire image data; and (B) calculating, based on the image data of the substrate after plasma etching, at least one selected from a group consisting of a dimension of a pattern on the substrate after plasma etching, information on a defect on the substrate after plasma etching, a thickness of a film on the substrate after plasma etching, and information on an appearance of the substrate after plasma etching.

The disclosure provides a substrate cleaning device and a substrate processing device capable of suppressing erroneous rotation detection of an optical sensor due to adhesion of droplets or mist. A substrate cleaning device includes a substrate cleaning part for cleaning a substrate, a drive roller for rotating the substrate, a driven roller rotated by the substrate, and a rotation detection part for detecting rotation of the driven roller. The rotation detection part includes a detected part provided on the driven roller, an optical sensor for detecting rotation of the detected part by irradiation with detection light, and a liquid filling part for filling an optical path forming space in which an optical path of the detection light is formed with a liquid having transmittance.

A substrate processing apparatus includes a polishing member having a polishing surface configured to perform a polishing of a main surface of a substrate; a first dressing member having a first dressing surface configured to perform a dressing of the polishing surface; a second dressing member having a second dressing surface configured to perform a dressing of the first dressing surface; a holding member configured to hold the polishing member and the second dressing member; and a driving unit configured to, by moving the holding member, switch a first state in which the first dressing surface and the polishing surface come into contact with each other to perform the dressing of the polishing surface and a second state in which the first dressing surface and the second dressing surface come into contact with each other to perform the dressing of the first dressing surface.

Various embodiments of the teachings herein include a device for detecting process parameters during a pass through an assembly line for assembling electronic components and/or for applying joining materials. The device may include: a carrier for transport by a conveying system of the assembly line and configured to receive a test plate; a sensor for measuring a process parameter during the pass; and a force sensor arranged to detect a force acting on the test plate during the pass.

An operation accuracy measuring method for measuring the operation accuracy of a linear motion mechanism includes the steps of placing on a support table a measuring jig having a flat lower surface, a parallel surface opposite and parallel to the lower surface, and a slanted surface joined to the parallel surface through a straight boundary line, adjusting the position of the measuring jig to allow the white light interferometer to observe the parallel surface and the slanted surface simultaneously, capturing images of the parallel surface and the slanted surface with the white light interferometer and observing changes in interference fringes appearing in image sections of the captured images that represent the parallel surface and the slanted surface while the support table is being linearly moved, and the step of deducing the operation accuracy of the linear motion mechanism on the basis of the observed changes in the interference fringes.

A substrate processing apparatus includes processing units, an exhaust path, a gas processing apparatus and a controller. Each processing unit is configured to process a substrate by using a chemical. A gas exhausted from the processing units flows through the exhaust path. The gas processing apparatus is provided in the exhaust path to remove a target component contained in the gas. The gas processing apparatus includes a duct, a partition plate and a liquid supply. The duct has therein a flow path. The partition plate divides the flow path into spaces, and is formed of a porous material, through which the gas passes, configured to retain a liquid. The liquid supply is configured to supply a dissolving liquid configured to dissolve the target component to the partition plate. The controller adjusts a flow rate of the dissolving liquid according to operation information indicating an operational status of the processing units.

An etching method includes: accommodating a substrate having a recess formed by a sidewall, which is a germanium-containing film, into a processing container; etching the sidewall by supplying an etching gas including a first fluorine-containing gas and a second fluorine-containing gas into the processing container; and controlling a shape of the sidewall after etching by, in the etching the sidewall, adjusting a partial pressure of the first fluorine-containing gas in the processing container, or a ratio of a flow rate of the second fluorine-containing gas to a flow rate of the first fluorine-containing gas supplied into the processing container.

Methods and systems for detection of an endpoint of a substrate process are provided. A set of machine learning models are trained to provide a metrology measurement value associated with a particular type of metrology measurement for a substrate based on spectral data collected for the substrate. A respective machine learning model is selected to be applied to future spectral data collected during a future substrate process for a future substrate in view of a performance rating associated with the particular type of metrology measurement. Current spectral data is collected during a current process for a current substrate and provided as input to the respective machine learning model. An indication of a respective metrology measurement value corresponding to the current substrate is extracted from one or more outputs of the trained machine learning model. In response to a determination that the respective metrology measurement satisfies a metrology measurement criterion, an instruction including a command to terminate the current process is generated.