A substrate processing apparatus includes: a nozzle unit configured to discharge a processing liquid to a substrate; a pipe connected to the nozzle unit and a processing liquid supply unit supplying the processing liquid; a charge amount control unit disposed at the pipe, including a filter unit charged with positive charges or negative charges, and including at least one of a control valve, controlling a flow rate of the processing liquid passing through an inside of the filter unit, and a power supply unit, applying a voltage to the filter unit, to control a charge amount of the processing liquid; and a control unit connected to the charge amount control unit.

A wafer treatment apparatus includes a wafer supporter for supporting and rotating a wafer, a frontside liquid discharger for discharging a liquid toward a frontside of the wafer, a backside liquid discharger for discharging the liquid toward a backside of the wafer, a treatment chamber for accommodating the wafer supporter, and including liquid collecting inlets stacked on each other and receiving the liquid discharged from at least one of the frontside and backside liquid dischargers, and a controller for controlling a height of an upper end of a first liquid collecting inlet of the liquid collecting inlets to have one of a first height in a process of discharging the liquid to the backside of the wafer adjacent to the wafer supporter and a second height, lower than the first height, in a process of discharging the liquid to the frontside of the wafer.

A semiconductor manufacturing apparatus includes an imaging device that images a die; a lighting device having a light source that is a point light source or a line light source; and a controller configured to apply a light beam to a part of the die by the light source to form a bright field area on the die, and repeat moving the bright field area at a predetermined pitch and imaging of the die to inspect an inside of the bright field area.

An advanced process control system including a first process tool, a second process tool, and a measurement tool is provided. The first processing tool is configured to process each of a plurality of wafers by one of a plurality of first masks, and provide a first process timing data. The second processing tool is configured to process the wafer processing by the first process tool by one of a plurality of second masks to provide a plurality of works. The second process tool provides a measurement trigger signal according to the first process timing data. The measuring tool is configured to determine whether to perform a measuring operation on each works in response to the measurement trigger signal, and correspondingly provide a measurement result.

After molding a substrate located between first and second molds of a molding system, a used release film that is in contact with the substrate during molding is removed from the molding system with a gripper assembly, which is reciprocally movable between a retracted position outside the molding system and an extended position in a space between the first and second molds when the first and second molds are opened. A carriage mechanism on which the gripper assembly is mounted moves the gripper assembly towards the first or second mold until the gripper assembly contacts the used release film, before an actuator actuates the gripper assembly to clamp onto a part of the used release film. The carriage mechanism also conveys the gripper assembly away from the first mold or second mold to remove the used release film from the molding system.

Implementations described herein relate to pressure control for vacuum chuck substrate supports. In one implementation, a process chamber defines a process volume and a vacuum chuck support is disposed within the process volume. A pressure controller is disposed on a fluid flow path upstream from the vacuum chuck and a flow restrictor is disposed on the fluid flow path downstream from the vacuum chuck. Each of the pressure controller and flow restrictor are in fluid communication with a control volume of the vacuum chuck.

A device for maintaining cleanliness in a vacuum environment during semiconductor manufacture in a device storing and transferring wafers into etching and other manufacturing processes includes a transferring chamber storing wafers, a vacuum system to extract particles from the transferring chamber, and a thermoelectric device for temperature control. The vacuum system includes an extracting pipe, the thermoelectric device includes a cooling apparatus to cool the transferring chamber, and a monitoring device to detect particle concentrations in the transferring chamber. The cooling apparatus includes Peltier elements arranged on the extracting pipe to cool and thus cause the descent of fumes and particles towards a low-set extraction area.

A lithography system includes a radiation source configured to generate a radiation, a reticle configured to redirect the radiation, a first type injection nozzle proximal to the reticle and configured to generate a first particle shield in a propagation path of the radiation, and a second type injection nozzle proximal to the radiation source and configured to generate a second particle shield in the propagation path of the radiation. The second type injection nozzle and the first type injection nozzle are of different types.

A method for aligning to a pattern on a wafer is disclosed. The method includes the steps of obtaining a first inline image from a first sample wafer, obtaining a first contour pattern of an alignment mark pattern from the first inline image, using the first contour pattern to generate a first synthetic image in black and white pixels, using the first synthetic image as a reference to recognize the alignment mark pattern on a tested wafer, and aligning to a tested pattern on the tested wafer according to a position of the alignment mark pattern on the tested wafer and a coordinate information.

Provided is a charged particle beam device capable of improving the accuracy of measurement and processing. The charged particle beam device includes an electrostatic chuck that adsorbs an inspection object, a voltage generation unit that generates a voltage to be supplied to the electrostatic chuck, and a state determination unit that determines a state of the inspection object. Here, the state determination unit includes a current waveform simulation unit that simulates a time-series change of an electrostatic chuck current flowing through the voltage generation unit when the electrostatic chuck normally adsorbs the inspection object, a difference integration unit that acquires an integration value of a difference between a time-series change of a simulation current generated by the current waveform simulation unit and the time-series change of the electrostatic chuck current flowing through the voltage generation unit, and a difference determination unit that determines an adsorption state of the inspection object and a shape feature of the inspection object based on the integration value of the difference.