A method, a non-transitory computer readable medium and a device. The method may include (a) introducing a voltage difference between an absolute value of a negative pole of the electrostatic chuck and an absolute value of a positive pole of the electrostatic chuck, the introducing occurs while the wafer is supported by the electrostatic chuck and is contacted by one or more conductive contact pins of the electrostatic chuck; (b) monitoring, by an electrostatic sensor that comprises a sensing element, a charge at a point of measurement located at a front side of the wafer, at different points of time that follow a start of the introducing of the voltage difference, to provide monitoring results; and (c) determining an electrical parameter of the contact between the wafer and the electrostatic chuck, based on the monitoring results.

A multi-beam system includes a light source configured to emit light; a fiber bundle connected to the light source; and a camera configured to capture an image set including images corresponding to each fiber connected to the light source. The fiber bundle includes a central fiber having one end connected to the light source, and N layers of fibers surrounding the central fiber. The first layer of fibers includes M fibers, each having one end connected to the light source, and the Nth layer of fibers includes more than M fibers, but only M fibers in the Nth layer of fibers have one end connected the light source. A processor is configured to determine a centroid of each image in the image set to produce a centroid map and generate a fiber location map comprising fiber locations of all fibers in the fiber bundle based on the centroid map.

The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a process chamber provided with a reaction space and having at least one insulation member exposed to the reaction space; a substrate support member for supporting a substate at the reaction space; a gas supply member for selectively supplying a passivation gas or a process gas to the reaction space; a plasma source for exciting the passivation gas or the process gas to a plasma; and a controller for controlling the gas supply member and the plasma source, and wherein the controller controls the gas supply member and the plasma source so the passivation gas is supplied to the reaction space and a supplied passivation gas is excited to the plasma, in a state at which the substrate is not taken into the reaction space.

There is provided a system for processing a substrate under a depressurized environment. The system comprises: a processing chamber configured to perform desired processing on a substrate; a transfer chamber having a transfer mechanism configured to import or export the substrate into or from the processing chamber; and a controller configured to control a processing process in the processing chamber. The transfer mechanism comprises: a fork configured to hold the substrate on an upper surface; and a sensor provided in the fork and configured to measure an internal state of the processing chamber. The controller is configured to control the processing process in the processing chamber on the basis of the internal state of the processing chamber measured by the sensor.

Embodiments of the present disclosure relate to a method and an apparatus for monitoring plasma behavior inside a plasma processing chamber. In one example, a method for monitoring plasma behavior includes acquiring at least one image of a plasma, and determining a plasma parameter based on the at least one image.

A substrate processing system for treating a substrate includes a manifold and a plurality of injector assemblies located in a processing chamber. Each of the plurality of injector assemblies is in fluid communication with the manifold and includes a valve including an inlet and an outlet. A dose controller is configured to communicate with the valve in each of the plurality of injector assemblies and adjust a pulse width supplied to the valve in each of the plurality of injector assemblies based on at least one of manufacturing differences between the valves in each of the plurality of injector assemblies and non-uniformities of the valves in each of the plurality of injector assemblies to cause a desired dose to be supplied from the valve in each of the plurality of injector assemblies.

A workpiece unit that includes a workpiece, a tape stuck to the workpiece; and an annular frame to which an outer circumferential edge of the tape is stuck and which has an opening defined centrally therein. The workpiece is disposed in the opening in the annular frame and supported on the annular frame by the tape, and at least one of the tape and the annular frame has an irreversible discoloring section that discolors in response to an external stimulus. Such a configuration makes it possible to determine whether or not a process involving an external stimulus has been carried out on the workpiece unit, based on the appearance of the workpiece unit (i.e., based on whether the irreversible discoloring section has been discolored or not).

The device (420) is for supporting substrates in a reaction chamber of an epitaxial reactor; it comprises: a disc-shaped element (422) having a first face (422A) adapted to be upperly positioned when the device (420) is being used and a second face (422B) adapted to be lowerly positioned when the device (420) is being used, said disc-shaped element (422) being adapted to receive a gas flow (F) to rotate the device (420) about an axis (X) thereof, a substrate-supporting element (424) in a single piece with said disc-shaped element (422) and preferably adjacent to said first face (422A), and a shaft (426) coaxial to said disc-shaped element (422), in a single piece with said disc-shaped element (422) and having a first end (426A) at said second face (422B); said shaft (426) has at a second end (426 B) thereof at least a protrusion (428 A, 428B, 428C) whose rotation is adapted to be detected by a pyrometer (430) or a thermographic camera.

A substrate support includes an electrostatic chuck formed of ceramics and holding a substrate by electrostatic attraction, a base supporting the electrostatic chuck, and a flow path through which a heat exchange medium flows. An upper surface of the flow path is formed of ceramics.

The present disclosure describes a method for controlling radiation conditions and an example system for performing the method. The method includes sending a first setting to configure a radiation device to provide radiation to a substrate undergoing a process operation in a process chamber of the radiation device. The method further includes receiving radiation energy data measured at a plurality of locations of the process chamber and receiving measurement data measured on the substrate during the process operation. The method further includes in response to a variance of the radiation energy data being above a first predetermined threshold and in response to a difference between reference data and the measurement data being above a second predetermined threshold, sending a second setting to configure the radiation device to provide radiation to the substrate.