A substrate treatment line is disclosed. The substrate treatment line may include a chamber portion including a plurality of treatment chambers stacked in a vertical direction, and a vertical return robot, including a plurality of gripping portions, to transfer a plurality of substrates in a vertical direction simultaneously and load or unload the substrates to the treatment chambers.

A substrate cleaning line and a substrate cleaning system including the same are disclosed. The substrate cleaning line may include a chamber portion including a plurality of cleaning chambers to clean a substrate, and a first return robot to load, unload, or transfer the substrate from or to the plurality of cleaning chambers, wherein the cleaning chambers may be stacked on each other in a vertical direction.

A semiconductor process system includes a process chamber. The process chamber includes a wafer support configured to support a wafer. The system includes a bell jar configured to be positioned over the wafer during a semiconductor process. The interior surface of the bell jar is coated with a rough coating. The rough coating can include zirconium.

The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a chamber having an entrance for taking in and taking out a substrate at a side wall; a support unit provided inside of the chamber and supporting the substrate; an imaging unit for imaging a substrate being taken in by a transfer robot through the entrance; and a controller is configured to control a position of the transfer robot based on an image data from the imaging unit.

This invention relates to a substrate processing technique for performing a pressure increasing step, a pressure keeping step and a pressure reducing step in this order in a processing container. A flow rate of a processing fluid in a processing space is suppressed to a second flow rate lower than a first flow rate while maintaining the processing space at a first pressure between the pressure increasing step and the pressure keeping step or in an initial stage of the pressure keeping step. In this way, the mutual diffusion between the processing fluid and a liquid in the processing space is promoted. After this diffusion proceeds, the substrate is dried by the discharge of the processing fluid from the processing space.

A substrate processing apparatus includes a processing chamber; a rotary table that is rotatably provided in the processing chamber; a heater provided below the rotary table; a partition, provided between the rotary table and the heater with a gap with respect to a lower surface of the rotary table, configured to partition the processing chamber into a first region in which the rotary table is provided and a second region in which the heater is provided; a first processing region in which a first processing gas is supplied to an upper surface of the rotary table; a second processing region in which a second processing gas is supplied to the upper surface of the rotary table; and a separation region in which a separation gas for separating the first and second processing gas is supplied to the upper surface of the rotary table.

The present disclosure provides a substrate treating apparatus having improved efficiency and productivity. The substrate treating apparatus of the present disclosure comprises a process chamber having a treating space therein, a transfer robot comprising a robot hand for loading and unloading a substrate into and out of the treating space and gripping the substrate, and a teaching buffer for aligning the robot hand, wherein the teaching buffer comprises a teaching plate for providing a reference point, and at least one camera looking at the teaching plate, wherein the camera captures the reference point of the teaching plate, wherein the transfer robot aligns the robot hand with the reference point using the camera.

A method and apparatus for performing post-exposure bake cooling operations is described herein. The method begins by post exposure baking a substrate disposed on heated substrate support in a process chamber, the process chamber having a showerhead. The heated substrate support is moved to increase a distance between the heated substrate support and a cooled plate of the showerhead. The substrate is separated from the heated substrate support using a substrate lifting device. The substrate is moved into a close proximity to the cooled showerhead. The substrate is cooled until the substrate is less than about 70 degrees Celsius. The substrate is spaced away from the cooled showerhead using the substrate lifting device and aligning the substrate with a substrate transfer passage of the processing chamber for removal by a robot.

A teaching apparatus includes a chamber; an electrostatic chuck in the chamber, the electrostatic chuck including a sidewall surrounding a loading area; an aligner configured to be loaded onto the loading area of the electrostatic chuck; a vision sensor configured to obtain measurement data by measuring separation distances of separation regions between the aligner and the sidewall of the electrostatic chuck and to transmit the measurement data; a transfer robot configured to load the aligner onto a reference position of the loading area and to position the vision sensor above the electrostatic chuck; and controller configured to reset the reference position and to equalize the separation distances based on the measurement data transmitted from the vision sensor.

Systems and methods are described for integrated decomposition and scanning of a semiconducting wafer, where a single chamber is utilized for decomposition and scanning of the wafer of interest.