A developing device and a developing method of substrate are provided. The developing device comprises: a conveying platform and a spraying mechanism disposed above the conveying platform; the spraying mechanism comprising a spraying pipe; a plurality of first nozzles and a plurality of second nozzles disposed on the spraying pipe. The conveying platform is used for conveying a substrate, and tilting the substrate with respect to the horizontal direction during a conveying process. The first nozzles are used for spraying a chemical solution onto the substrate continuously; the second nozzles are used for starting or ending spraying the chemical solution onto the substrate according to a predetermined spray density.

The present disclosure reduces deviation in the position and inclination of a stage due to the deformation of a processing container. A vacuum processing apparatus includes a processing container configured to be capable of maintaining an inside thereof in a vacuum atmosphere, a stage provided in the processing container such that a substrate is placed thereon, a support member passing through a hole in the bottom of the processing container to support the stage from the bottom side, a base member engaged with an end portion of the support member located outside the processing container to be movable integrally with the stage, and a plurality of actuators provided in parallel with each other between the bottom of the processing container and the base member and configured to adjust a position and an inclination of the stage by moving the base member relative to the bottom of the processing container.

An electronics manufacturing system includes a first substrate transfer via having position detection sensors to detect a position of a substrate in the first substrate transfer via and flow-controlled valves to inject inert gas through a floor and move the substrate in a predetermined direction with reference to the position within the first substrate transfer via by adjusting a pressure of the inert gas underneath the substrate. A processing chamber is coupled to the first substrate transfer via and having a pedestal with apertures and flow-controlled devices to inject inert gas through the apertures to receive the substrate from the first substrate transfer via and move the substrate into a second substrate transfer via after processing of the substrate.

Embodiments disclosed herein generally include annealing chambers. The annealing chambers allow for high throughput without sacrificing wafer-to-wafer and within wafer uniformity. The annealing chamber includes a transport system, a substrate carrier, and a plurality of thermal sources. The transport system is magnetically coupled to the substrate carrier. The transport system moves the substrate carrier along a path. A substrate supported by the substrate carrier is annealed by the thermal sources. The annealing chamber described herein allows for a higher throughput of substrate (alternatively referred to as a wafer) annealing compared to furnace annealing chambers.

To provide an automated apparatus for conveying a rectangular substrate. According to one embodiment, there is provided a substrate conveying apparatus for conveying the rectangular substrate. The substrate conveying apparatus includes a plurality of conveyance rollers, a plurality of roller shafts, a motor, and a pusher. The plurality of conveyance rollers are configured to support a lower surface of the substrate. To the plurality of roller shafts, the plurality of conveyance rollers are mounted. The motor is configured to rotate the plurality of roller shafts. The pusher is for lifting the substrate on the plurality of conveyance rollers such that the substrate is separated away from the plurality of conveyance rollers. The pusher includes a stage configured to pass through a clearance between the plurality of roller shafts.

Some embodiments of the present disclosure relate to a processing tool. The tool includes a housing enclosing a processing chamber, and an input/output port configured to pass a wafer through the housing into and out of the processing chamber. A back-side macro-inspection system is arranged within the processing chamber and is configured to image a back side of the wafer. A front-side macro-inspection system is arranged within the processing chamber and is configured to image a front side of the wafer according to a first image resolution. A front-side micro-inspection system is arranged within the processing chamber and is configured to image the front side of the wafer according to a second image resolution which is higher than the first image resolution.

There are provided a method for producing a photovoltaic element with stabilised efficiency, and a device which may be used to carry out the method, for example in the form of a specially adapted continuous furnace. A silicon substrate to be provided with an emitter layer and electrical contacts is thereby subjected to a stabilisation treatment step. In that step, hydrogen, for example from a hydrogenated silicon nitride layer, is introduced into the silicon substrate, for example within a zone (2) of maximum temperature. The silicon substrate may then purposively be cooled rapidly in a zone (3) in order to avoid hydrogen effusion. The silicon substrate may then purposively be maintained, for example in a zone (4), within a temperature range of from 230° C. to 450° C. for a period of, for example, at least 10 seconds. The previously introduced hydrogen may thereby assume an advantageous bond state. At the same time or subsequently, a regeneration may be carried out by generating excess minority charge carriers in the substrate at a temperature of at least 90° C., preferably at least 230° C. Overall, with the proposed method, a regeneration process in the production of a photovoltaic element may be accelerated significantly so that it may be carried out, for example, in a suitably modified continuous furnace.

A method for forming at least one alkali metal or alkaline earth metal electrode, said method comprising: a) providing a metal foil; b) cutting the metal foil to form at least one electrode; c) placing an electrode on a carrier; d) applying one or more protection layers to one or both sides of the electrode; and e) removing the electrode from the carrier.

A drying device contains an upper drying head and a lower drying head. The upper drying head is arranged above a transport plane, in which objects to be dried can be transported in a transport direction through the drying device. The lower drying head is arranged below the transport plane. The upper drying head and the lower drying head contain in each case at least one air outlet slot and the longitudinal directions of the air outlet slots essentially extending parallel to the transport plane and transversely to the transport direction, and in which slot planes, in which the air outlet slots extend, intersect the transport plane at angles which are greater than 0° and less than 90°.

An organic layer deposition apparatus and a method of manufacturing an organic light-emitting display device by using the apparatus. In particular, an organic layer deposition apparatus that is more easily manufactured and is suitable for use in mass production of large substrates while performing high-definition patterning thereon, as well as a method of manufacturing an organic light-emitting display device by using such an apparatus.