A semiconductor device comprises a semiconductor die and an integrated capacitor formed over the semiconductor die. The integrated capacitor is configured to receive a high voltage signal. A transimpedance amplifier is formed in the semiconductor die. An avalanche photodiode is disposed over or adjacent to the semiconductor die. The integrated capacitor is coupled between the avalanche photodiode and a ground node. A resistor is coupled between a high voltage input and the avalanche photodiode. The resistor is an integrated passive device (IPD) formed over the semiconductor die. A first terminal of the integrated capacitor is coupled to a ground voltage node. A second terminal of the integrated capacitor is coupled to a voltage greater than 20 volts. The integrated capacitor comprises a plurality of interdigitated fingers in one embodiment. In another embodiment, the integrated capacitor comprises a plurality of vertically aligned plates.

According to the present invention, a semiconductor device includes a substrate having a metallic pattern formed on a top surface of the substrate, a semiconductor chip provided on the metallic pattern, a back surface electrode terminal in flat plate form connected to the metallic pattern with a wire, a front surface electrode terminal in flat plate form, the front surface electrode terminal being in parallel to the back surface electrode terminal above the back surface electrode terminal, extending immediately above the semiconductor chip, and being directly joined to a top surface of the semiconductor chip, a case surrounding the substrate and a seal material for sealing an inside of the case.

According to the present invention, a semiconductor device includes a substrate having a metallic pattern formed on a top surface of the substrate, a semiconductor chip provided on the metallic pattern, a back surface electrode terminal in flat plate form connected to the metallic pattern with a wire, a front surface electrode terminal in flat plate form, the front surface electrode terminal being in parallel to the back surface electrode terminal above the back surface electrode terminal, extending immediately above the semiconductor chip, and being directly joined to a top surface of the semiconductor chip, a case surrounding the substrate and a seal material for sealing an inside of the case.

According to the present invention, a semiconductor device includes a substrate having a metallic pattern formed on a top surface of the substrate, a semiconductor chip provided on the metallic pattern, a back surface electrode terminal in flat plate form connected to the metallic pattern with a wire, a front surface electrode terminal in flat plate form, the front surface electrode terminal being in parallel to the back surface electrode terminal above the back surface electrode terminal, extending immediately above the semiconductor chip, and being directly joined to a top surface of the semiconductor chip, a case surrounding the substrate and a seal material for sealing an inside of the case.

According to the present invention, a semiconductor device includes a substrate having a metallic pattern formed on a top surface of the substrate, a semiconductor chip provided on the metallic pattern, a back surface electrode terminal in flat plate form connected to the metallic pattern with a wire, a front surface electrode terminal in flat plate form, the front surface electrode terminal being in parallel to the back surface electrode terminal above the back surface electrode terminal, extending immediately above the semiconductor chip, and being directly joined to a top surface of the semiconductor chip, a case surrounding the substrate and a seal material for sealing an inside of the case.

A header for an electronic component including a base body, a thermoelectric cooler, a carrier and first and second conductor track arrangements. The thermoelectric cooler is thermally attached to the base body. The carrier is coupled to the thermoelectric cooler and is cooled thereby. The first and second conductor track arrangements each have a signal conductor, at least one grounding conductor and an end. The second conductor track arrangement is on the carrier and connected to the electronic component. The first and second conductor track arrangements are separated by a gap that is bridged by bonding wire connections electrically connecting the first and second signal conductors and electrically connecting the two grounding conductors, the ends facing each other across the gap, at least one of the ends having a capacitive structural feature that increases the capacitance of the first and/or the second conductor track arrangement.

The present disclosure relates to components, such as base bodies, for feed-through elements including a metallic base body, at least one through-opening for receiving a functional element in a fixing material, such as an electrically insulating fixing material, and at least one conductor, which is connected electrically conductively to the base body by a soldered connection. The soldered connection includes a metallic solder material that covers a surface region of the base body and thus forms a soldering region on a surface of the base body. The base body has, at least in the soldering region, a microstructuring that includes at least depressions in the surface of the base body. The present disclosure similarly relates to methods for producing such base bodies and to applications thereof.

A packaged power transistor device includes a Direct-Bonded Copper (DBC) substrate. Contact pads of a first lead are attached with solderless welds to a metal layer of the DBC substrate. In a first example, the solderless welds are ultrasonic welds. In a second example, the solderless welds are laser welds. A single power transistor realized on a single semiconductor die is attached to the DBC substrate. In one example, a first bond pad of the die is wire bonded to a second lead, and a second bond pad of the die is wire bonded to a third lead. The die, the wire bonds, and the metal layer of the DBC substrate are covered with an amount of plastic encapsulant. Lead trimming is performed to separate the first, second and third leads from the remainder of a leadframe, the result being the packaged power transistor device.

A device (2) is provided on an upper surface of the device substrate (1). A sealing frame (16) made of a non-electrolytic plating reactive catalyst metal is provided on the upper surface of the device substrate (1) and surrounds the device (2). An upper surface of the device substrate (1) and a lower surface of the cap substrate (10) are joined in a hollow state through the sealing frame (16). A plurality of electrodes (8, 11, 12) are connected to the device (2) and extended out of the device substrate (1) and the cap substrate (10). A metal film (20) is provided on an outer surface of the sealing frame (16) and not provided on the device substrate (1) and the cap substrate (10).

A package encloses a power semiconductor die and has a package body with a package top side, package footprint side and package sidewalls. The die has first and second load terminals for blocking a blocking voltage. A lead frame structure electrically and mechanically couples the package to a support and includes an outside terminal extending out of the package footprint side and/or the sidewalls, and is electrically connected with the first load terminal. A top layer arranged at the package top side is electrically connected with the second load terminal. A creepage length between the electrical potential of the outside terminal and the electrical potential of the top layer is defined by a package body surface contour. The surface contour is formed at least by the package top side and package sidewall. At least one structural feature also forms the surface contour is configured to increase the creepage length.