A semiconductor device includes: a semiconductor chip; a case having a frame portion that has an inner wall portion surrounding an housing area in which the semiconductor chip is disposed; a buffer member provided on at last part of the inner wall portion of the case on a side of the housing area; a low expansion member provided on said at least part of the inner wall portion with the buffer member interposed therebetween on the side of the housing area; and a sealing member that seals the housing area, wherein the buffer member has a smaller elastic modulus than the case and the sealing member, and wherein the low expansion member has a smaller linear expansion coefficient than the case and the sealing member.

A semiconductor device includes: a semiconductor chip; a case having a frame portion that has an inner wall portion surrounding an housing area in which the semiconductor chip is disposed; a buffer member provided on at last part of the inner wall portion of the case on a side of the housing area; a low expansion member provided on said at least part of the inner wall portion with the buffer member interposed therebetween on the side of the housing area; and a sealing member that seals the housing area, wherein the buffer member has a smaller elastic modulus than the case and the sealing member, and wherein the low expansion member has a smaller linear expansion coefficient than the case and the sealing member.

A semiconductor device includes: an insulating substrate; a first semiconductor element connected to the insulating substrate; a conductive member disposed on the insulating substrate, and including a first opposing portion and a second opposing portion located opposite each other with respect to the first semiconductor element in plan view; a first wire connected to the first semiconductor element and the first opposing portion; and a second wire connected to the first semiconductor element and the second opposing portion, and located opposite the first wire with respect to a connection point where the first wire and the first semiconductor element are connected to each other in plan view.

A semiconductor device includes: an insulating substrate; a first semiconductor element connected to the insulating substrate; a conductive member disposed on the insulating substrate, and including a first opposing portion and a second opposing portion located opposite each other with respect to the first semiconductor element in plan view; a first wire connected to the first semiconductor element and the first opposing portion; and a second wire connected to the first semiconductor element and the second opposing portion, and located opposite the first wire with respect to a connection point where the first wire and the first semiconductor element are connected to each other in plan view.

A semiconductor device includes a substrate including a first main surface and having a circuit pattern, a semiconductor chip disposed on the circuit pattern, a frame body extending in a direction intersecting the first main surface and surrounding an outer periphery of the substrate, and a resin portion arranged in a space surrounded by the frame body and covering the substrate and the semiconductor chip. The resin portion includes a first region located on the semiconductor chip in contact with the semiconductor chip, and a second region located on a side of the first region opposite from the side where the semiconductor chip is located, the second region having a same volume as the first region and having a projection plane projected in a same shape as the first region as viewed in a thickness direction of the substrate. The amount of air bubbles contained in the resin portion arranged in the first region is smaller than the amount of air bubbles contained in the resin portion arranged in the second region.

A semiconductor device includes a substrate including a first main surface and having a circuit pattern, a semiconductor chip disposed on the circuit pattern, a frame body extending in a direction intersecting the first main surface and surrounding an outer periphery of the substrate, and a resin portion arranged in a space surrounded by the frame body and covering the substrate and the semiconductor chip. The resin portion includes a first region located on the semiconductor chip in contact with the semiconductor chip, and a second region located on a side of the first region opposite from the side where the semiconductor chip is located, the second region having a same volume as the first region and having a projection plane projected in a same shape as the first region as viewed in a thickness direction of the substrate. The amount of air bubbles contained in the resin portion arranged in the first region is smaller than the amount of air bubbles contained in the resin portion arranged in the second region.

A power semiconductor module includes a carrier comprising a first side and an opposite second side, a power semiconductor die arranged at the first side of the carrier, and a housing arranged at least partially on the second side of the carrier and forming a joining site for a cooler on the second side. The joining site completely surrounds an inner portion of the second side of the carrier. The inner portion is configured to be in direct contact with a cooling fluid within the cooler.

A power semiconductor module includes a carrier comprising a first side and an opposite second side, a power semiconductor die arranged at the first side of the carrier, and a housing arranged at least partially on the second side of the carrier and forming a joining site for a cooler on the second side. The joining site completely surrounds an inner portion of the second side of the carrier. The inner portion is configured to be in direct contact with a cooling fluid within the cooler.

The present disclosure provides a semiconductor device. The semiconductor device includes a substrate, amounting layer, switching elements, a moisture-resistant layer and a sealing resin. The substrate has a front surface facing in a thickness direction. The mounting layer is electrically conductive and disposed on the front surface. Each switching element includes an element front surface facing in the same direction in which the front surface faces along the thickness direction, a back surface facing in the opposite direction of the element front surface, and a side surface connected to the element front surface and the back surface. The switching elements are electrically bonded to the mounting layer with their back surfaces facing the front surface. The moisture-resistant layer covers at least one side surface. The sealing resin covers the switching elements and the moisture-resistant layer. The moisture-resistant layer is held in contact with the mounting layer and the side surface so as to be spanned between the mounting layer and the side surface in the thickness direction.

The present disclosure provides a semiconductor device. The semiconductor device includes a substrate, amounting layer, switching elements, a moisture-resistant layer and a sealing resin. The substrate has a front surface facing in a thickness direction. The mounting layer is electrically conductive and disposed on the front surface. Each switching element includes an element front surface facing in the same direction in which the front surface faces along the thickness direction, a back surface facing in the opposite direction of the element front surface, and a side surface connected to the element front surface and the back surface. The switching elements are electrically bonded to the mounting layer with their back surfaces facing the front surface. The moisture-resistant layer covers at least one side surface. The sealing resin covers the switching elements and the moisture-resistant layer. The moisture-resistant layer is held in contact with the mounting layer and the side surface so as to be spanned between the mounting layer and the side surface in the thickness direction.