Implementations of semiconductor packages may include: a first substrate having a first dielectric layer coupled between a first metal layer and a second metal layer; a second substrate having a second dielectric layer coupled between a third metal layer and a fourth metal layer. A first die may be coupled with a first electrical spacer coupled in a space between and coupled with the first substrate and the second substrate and a second die may be coupled with a second electrical spacer coupled in a space between and coupled with the first substrate and the second substrate.

A carrier substrate having a plurality of receptacles each for receiving and carrying a semiconductor chip is provided. Semiconductor chips are arranged in the receptacles, and metal is plated in the receptacles to form a metal structure on and in contact with the semiconductor chips. The carrier substrate is cut to form separate semiconductor devices.

A carrier substrate having a plurality of receptacles each for receiving and carrying a semiconductor chip is provided. Semiconductor chips are arranged in the receptacles, and metal is plated in the receptacles to form a metal structure on and in contact with the semiconductor chips. The carrier substrate is cut to form separate semiconductor devices.

A semiconductor device includes first and second semiconductor elements and first and second conductive members. A first electrode on the first semiconductor element is bonded to a first stack part of the first conductive member by a first bonding layer. A second electrode on the second semiconductor element is bonded to a second stack part of the second conductive member by a second bonding layer. A first joint part of the first conductive member is bonded to a second joint part of the second conductive member by an intermediate bonding layer. A first surface of the first joint part facing the second joint part, a side surface of the first joint part continuous from the first surface, a second surface of the second joint part facing the first joint part, and a side surface of the second joint part continuous from the second surface are covered by nickel layers.

A power module includes a power semiconductor element, an interconnection material, a circuit board, an external terminal, a joining material, and a sealing resin. A clearance portion is continuously formed between the sealing resin and each of an end surface of the joining material and a surface of the interconnection material so as to extend from the end surface of the joining material to the surface of the interconnection material, the end surface of the joining material being located between the power semiconductor element and the interconnection material, the surface of the interconnection material being located between the end surface and a predetermined position of the interconnection material separated by a distance from the end surface.

A semiconductor device includes: a semiconductor element having a first electrode and a second electrode on a first surface, and a third electrode on a second surface, wherein continuity between the second electrode and the third electrode is controlled by a voltage applied to the first electrode; a conductive first lead that is electrically connected to the first electrode and extends beyond a periphery of the first surface; and a conductive second lead that is electrically connected to the second electrode and extends beyond the periphery of the first surface. At least one edge of the periphery of the first surface faces neither the first lead nor the second lead, and portions of the first lead and the second lead that face the periphery of the first surface are provided with respective grooves.

A semiconductor device, including a case that has a first power terminal including a first bonding area and a second power terminal including a second bonding area, and an insulating unit located between the first power terminal and the second power terminal, and having a shape of a flat plate, the insulating unit being bonded to the case. The insulating unit has a first insulating portion in a sheet form, and a second insulating portion which covers an upper surface, a lower surface, or both the upper and lower surfaces, of the first insulating portion. The first bonding area and the second bonding area are exposed from the insulating unit and from the case.

A power module of the invention includes a power semiconductor element mounted on a circuit board, and an adapter connected to a front-surface main electrode of the element, wherein the adapter includes a main-electrode wiring member which is connected to the front-surface main electrode of the element; and wherein the main-electrode wiring member includes: an element connection portion connected to the front-surface main electrode of the element; a board connection portion which is placed outside the element connection portion and connected to the circuit board; and a connector connection portion which is placed outside the element connection portion and connected to an external electrode through a connector.

A signal block and a double-faced cooling power module that uses the signal block is provided. The signal block includes a plurality of signal clips that are formed in a ribbon shape to connect a first signal pad formed on a semiconductor chip and a second signal pad formed on a signal lead frame. An insulator fixes the position of the plurality of signal clips while spacing the signal clips apart from each other.

A semiconductor device includes: a housing; a substrate inside the housing; first and second semiconductor circuits on the substrate; and first and second planar terminals electrically connected to the first and second semiconductor circuits, respectively, the first and second planar terminals stacked on top of each other, wherein each of the first and second planar terminals extends away from the housing.