A semiconductor device includes at least one semiconductor element having a first terminal side and a second terminal side connected by an outer periphery portion, a first terminal on the first terminal side, and a second terminal on the second terminal side. The device includes a frame surrounding the outer periphery portion of the semiconductor element. A first electrode is on the first terminal side and is electrically connected to the first terminal. The first electrode includes a first body portion and a first projection protruding outwardly therefrom around the circumference of the first body portion. A second electrode is on the second terminal side and is electrically connected to the second terminal, and a metal plate is over the first electrode. The first projection of the first electrode is spaced from and extends along a peripheral portion of the metal plate.

In order to efficiently cool a heat-generating semiconductor element, it is desirable to cool a power semiconductor element from both surfaces. Therefore, in order to cool multiple power semiconductor elements, it is an effective way to alternately arrange a semiconductor component having the incorporated semiconductor element and a cooling device. A power conversion device for handling a high-power voltage needs to ensure pressure resistance between semiconductor elements or circuits inside the device. It is an effective way to seal the semiconductor component with a sealing material such as a silicone gel. Therefore, it is necessary to install the semiconductor component or the circuit having the incorporated semiconductor element, in a case from which a liquid silicone gel prior to curing does not leak even if the gel is injected. For these reasons, an object to be achieved by the invention is that the semiconductor element can be cooled from both surfaces by alternately arranging the semiconductor component having the incorporated semiconductor element and the cooling device. The above-described object can be achieved as follows. A substantially rectangular thin plate is subjected to mountain bending and valley bending so as to form a shape having as many recesses as the number of the mounted semiconductor components having the incorporated semiconductor element. Concurrently, a lateral side in a direction orthogonal to the above-described bending direction is bent so as to dispose the case in which all edges configuring an outer shape of the thin plate are arranged on substantially the same plane. The semiconductor component having the incorporated semiconductor element is arranged at a position serving as the recess of the case. The cooling devices are arranged so as to interpose the semiconductor component having the incorporated semiconductor element via the case. The semiconductor component having the incorporated semiconductor element is sealed with a silicone gel. In addition, preferably, the case is configured to include metal which has high heat conductivity. More preferably, the case is configured to include aluminum, copper, or an alloy whose principal components are both of these.

One aspect of the invention relates to a method for producing a chip assemblage. Two or more chip assemblies are produced in each case by cohesively and electrically conductively connecting an electrically conductive first compensation lamina to a first main electrode of a semiconductor chip. A control electrode interconnection structure is arranged in a free space between the chip assemblies. Electrically conductive connections are produced between the control electrode interconnection structure and control electrodes of the semiconductor chips of the individual chip assemblies. The chip assemblies are cohesively connected by means of a dielectric embedding compound.

A double-facing cooling-type power module has coolers on both sides. The power module includes: a first switch having the coolers on both sides; a second switch disposed independently from the first switch and having the coolers on both sides; and a common electrode coupled to both the first switch and the second switch.

Provided is a semiconductor device including: a first external electrode which includes a circular outer peripheral portion; a MOSFET chip; a control circuit chip which receives voltages of a drain electrode and a source electrode of the MOSFET and supplies a signal to a gate electrode to control the MOSFET on the basis of the voltage; a second external electrode which is disposed on an opposite side of the first external electrode with respect to the MOSFET chip and includes an external terminal on a center axis of the circular outer peripheral portion of the first external electrode; and an isolation substrate which isolates the control circuit chip from the external electrode. The first external electrode, the drain electrode and the source electrode of the MOSFET chip, and the second external electrode are disposed to be overlapped in a direction of the center axis. The drain electrode of the MOSFET chip and the first external electrode are connected. The source electrode of the MOSFET chip and the second external electrode are connected.

A semiconductor device includes a semiconductor chip, a metal member, and a terminal. The semiconductor chip has an electrode. The metal member is electrically connected to the electrode. The terminal extends from the metal member to be connected to an external connection member. The terminal has a width-increased portion in a predetermined area beginning from a first end of the terminal that connects to the metal member.

A semiconductor device includes a semiconductor chip, a metal member, and a terminal. The semiconductor chip has an electrode. The metal member is electrically connected to the electrode. The terminal extends from the metal member to be connected to an external connection member. The terminal has a width-increased portion in a predetermined area beginning from a first end of the terminal that connects to the metal member.

A rectifier package is provided, which comprises a first rectifier die having an anode and a cathode conductively bonded to a first conductive film on a first surface. The rectifier package also comprises a second rectifier die having an anode and a cathode conductively bonded to the first conductive film on a second surface, which is opposite to the first surface. The first conductive film is in contact with both anodes or both cathodes of the first rectifier die and the second rectifier die.

A power semiconductor package includes a reference voltage terminal, a supply voltage terminal, a phase terminal, a first power transistor and a second power transistor. The first power transistor and the second power transistor are connected in series and form a low side switch and a high side switch of a half bridge circuit.

A semiconductor device package may include a leadframe having a first portion with first extended portions and a second portion with second extended portions. Mold material may encapsulate a portion of the leadframe and a portion of a semiconductor die mounted to the leadframe. A first set of contacts of the semiconductor die may be connected to a first surface of the first extended portions, while a second set of contacts may be connected to a first surface of the second extended portions. A mold-locking cavity having the mold material included therein may be disposed in contact with a second surface of the first extended portions opposed to the first surface of the first extended portions, a second surface of the second extended portions opposed to the first surface of the second extended portions, the first portion of the leadframe, and the second portion of the leadframe.