A semiconductor device includes: a semiconductor element having a first main electrode and a second main electrode; a first heat dissipation member and a second heat dissipation member; and a lead frame including a first main terminal connected to the first heat dissipation member and a second main terminal connected to the second main electrode. The second main terminal includes a connection portion connected with the second main electrode, a facing portion extending from the connection portion and facing the first heat dissipation member, and a non-facing portion. The non-facing portion and the first main terminal are arranged in a direction orthogonal to a thickness direction. A side surface of the first main terminal and a side surface of the non-facing portion of the second main terminal face each other.

A semiconductor module includes: a semiconductor element having a first main electrode and a second main electrode; a first conductive member and a second conductive member connected to the first main electrode and the second main electrode, respectively, and placed to sandwich the semiconductor element; and a main terminal including a first main terminal continuous from the first conductive member and a second main terminal continuous from the second conductive member. The main terminal has a facing portion, a non-facing portion, a first connection portion, and a second connection portion. In a width direction, a formation position of the second connection portion overlaps with a formation position of the first connection portion.

The semiconductor device includes a semiconductor element having first and second main electrodes, first and second substrates connected to the first and second main electrodes, respectively, first and second main terminals connected to the first and second main electrodes via the first and second substrates, respectively, and a bonding member. The bonding member is interposed between the first and second main electrodes and between the first and second substrates, respectively. At least one of the first and second main terminals includes a plurality of terminals. The first and second main terminals are alternately arranged in one direction orthogonal to the thickness direction of the semiconductor element. The first and second main terminals are directly bonded to the first and second substrates without the bonding member.

A semiconductor device includes: multiple semiconductor elements each having a one surface and a rear surface in a plate thickness direction; a first member that sandwiches the multiple semiconductor elements and is electrically connected to an electrode on the one surface; a second member electrically connected to an electrode on the rear surface; and multiple terminals that are continuous from the first or second member. An area of the second member is smaller than that of the first member. Semiconductor elements are arranged in a longitudinal direction of the second member. The semiconductor device further includes a first joint portion that electrically connects each semiconductor element and the second member and a second joint portion that electrically connects a terminal and the second member. The multiple solder joint portions are symmetrically placed.

A semiconductor module 900 includes a semiconductor device 300 that includes first and second fin bases 800 having first and second connecting portions 810 and a resin 850 for sealing the outer peripheral side surfaces of first to fourth conductors 410 to 413, and a flow path forming body 600 connected to the first and second connecting portions 810 of the first and second fin bases 800. A first elastically deformed portion 801, which is elastically deformed, is provided such that a distance in a thickness direction between the outer peripheral ends 810a of the first and second connecting portions 810 becomes smaller than a distance in a thickness direction between intermediate portions 804 of the first and second connecting portions 810. The resin 850 is filled between the first and second connecting portions 810 of the first and second fin bases 800 are filled with the resin 850 therebetween.

A power semiconductor device includes a semiconductor wafer having a junction and a junction termination laterally surrounding the junction. A protection layer covers the lateral side of the semiconductor wafer and covers the second main side at least in an area of the junction termination. A first metal disk is arranged on the first main side to cover the first main side of the semiconductor wafer. An interface between the first metal disk and the semiconductor wafer is a free floating interface. A metal layer sandwiched between the first metal disk and the semiconductor wafer.

A power semiconductor device includes a semiconductor wafer having a junction and a junction termination laterally surrounding the junction. A protection layer covers the lateral side of the semiconductor wafer and covers the second main side at least in an area of the junction termination. A first metal disk is arranged on the first main side to cover the first main side of the semiconductor wafer. An interface between the first metal disk and the semiconductor wafer is a free floating interface. A metal layer sandwiched between the first metal disk and the semiconductor wafer.

We disclose herein a semiconductor device sub-assembly comprising: a plurality of semiconductor units laterally spaced to one another; a semiconductor unit locator comprising a plurality of holes, wherein each semiconductor unit is located in each hole of the semiconductor unit locator; a plurality of pressure means for applying pressure to each semiconductor unit, and a conductive malleable layer located between the plurality of pressure means and the semiconductor unit locator.

A power module includes a spacer block, a thermally conductive substrate coupled to one side of the spacer block, and a semiconductor device die coupled to an opposite side of the spacer block. The spacer block includes a solid spacer block and an adjacent flexible spacer block. An inner portion of the device die is coupled to the solid spacer block, and an outer portion of the semiconductor device die is coupled to the adjacent flexible spacer block.

Claims 3 and 10 are objected to as being dependent upon a rejected base claim, but would be allowable if rewritten in independent form including all of the limitations of the base claim and any intervening claims.

An object is to improve the productivity of a power semiconductor device. A power semiconductor device according to the invention includes a circuit portion having a conductor for transmitting a current and a power semiconductor element, a first base portion and a second base portion facing each other with the circuit portion interposed therebetween, and a transfer mold member which is in contact with the conductor and the power semiconductor element and is filled in a space between the first base portion and the second base portion. The first base portion includes a first flat portion that is connected to a peripheral edge of the first base portion, and a first bent portion that connects the first flat portion and another portion of the first base portion and is plastically deformed. The transfer mold member is integrally configured in contact with the first flat portion.