A semiconductor device, including an insulated circuit substrate that has a base plate, a resin layer disposed on a front surface of the base plate, and a circuit pattern disposed on a front surface of the resin layer; and a semiconductor chip that is rectangular in a plan view of the semiconductor device and is bonded to a front surface of the circuit pattern in such a manner that a side edge of the semiconductor chip is spaced inwardly from an outer peripheral edge of the circuit pattern by at least a predetermined distance. Both the predetermined distance and a thickness of the circuit pattern are greater than or equal to 0.1 of a length of one side of the semiconductor chip.

A microelectronics package assembly and process of making same are disclosed. The flange has an upper surface and a first coating disposed on the upper surface of the flange. The insulator has a bottom surface for mounting onto the flange and an upper surface opposite the bottom surface. A second coating is disposed on the bottom surface of the insulator and a third coating disposed on the upper surface of the insulator. The first coating, the second coating, and the third coating each have a thickness of less than or equal to 1 micron. At least one of the first coating, the second coating, and the third coating is applied via at least one of physical vapor deposition, atomic deposition, or chemical deposition.

A semiconductor module includes a base member including a circuit board on which a positive electrode pad and a negative electrode pad are provided and on which a semiconductor device is mounted to be electrically coupled to the positive electrode pad and the negative electrode pad, a housing that is attached to the base member so as to surround the positive electrode pad and the negative electrode pad, the housing being formed in a frame shape, a first electrode plate that is electrically coupled to the positive electrode pad, the first electrode plate having a flat plate portion, and a second electrode plate that is electrically coupled to the negative electrode pad, the second electrode plate having a flat plate portion. The flat plate portion of the first electrode plate and the flat plate portion of the second electrode plate are arranged in a parallel-plate configuration within the housing.

A semiconductor module includes a base member including a circuit board on which a positive electrode pad and a negative electrode pad are provided and on which a semiconductor device is mounted to be electrically coupled to the positive electrode pad and the negative electrode pad, a housing that is attached to the base member so as to surround the positive electrode pad and the negative electrode pad, the housing being formed in a frame shape, a first electrode plate that is electrically coupled to the positive electrode pad, the first electrode plate having a flat plate portion, and a second electrode plate that is electrically coupled to the negative electrode pad, the second electrode plate having a flat plate portion. The flat plate portion of the first electrode plate and the flat plate portion of the second electrode plate are arranged in a parallel-plate configuration within the housing.

A circuit assembly includes a plurality of electronic components; a plurality of control terminals electrically connected to the plurality of electronic components; and a holding member having insulating properties and holds the plurality of control terminals, wherein the control terminals serve as insert articles that form one piece with the holding member that is made of a resin, the control terminals each include: in a partial portion of the control terminal, an exposed face that is exposed from the holding member; a contact face that is located opposite to the exposed face and is in contact with the holding member; a first side face located between the exposed face and the contact face; and a second side face located between the exposed face and the contact face, and a first space formed lateral to the first side face, and a second space formed lateral to the second side face.

A semiconductor module includes a base member; a circuit board provided on the base member and including a positive electrode pad, a negative electrode pad, and semiconductor devices; a housing formed in a frame shape and attached to the base member; a first electrode plate electrically coupled to the positive electrode pad and having a first flat plate portion; a second electrode plate electrically coupled to the negative electrode pad and having a second flat plate portion; and a first insulating member. The first flat plate portion and the second flat plate portion are disposed in parallel from the inside to outside of the housing. The first flat plate portion has a first external connection terminal situated outside the housing, and the second flat plate portion has a second external connection terminal situated outside the housing. The first insulating member is sandwiched between the first and the second external connection terminals.

A glass wafer has an internal surface and an opposing external surface separated by a wafer thickness. A hermetic, electrically conductive feedthrough extends through the wafer from the internal surface to the opposing external surface. The feedthrough includes a feedthrough member having an inner face exposed along the internal surface for electrically coupling to an electrical circuit. The feedthrough member extends from the inner face partially through the wafer thickness to an exteriorly-facing outer face hermetically embedded within the wafer.

A glass wafer has an internal surface and an opposing external surface separated by a wafer thickness. A hermetic, electrically conductive feedthrough extends through the wafer from the internal surface to the opposing external surface. The feedthrough includes a feedthrough member having an inner face exposed along the internal surface for electrically coupling to an electrical circuit. The feedthrough member extends from the inner face partially through the wafer thickness to an exteriorly-facing outer face hermetically embedded within the wafer.

The present disclosure relates to a package capable of handling high radio frequency (RF) power, which includes a carrier, a ring structure attached to a top surface of the carrier, an RF die attached to the top surface of the carrier within an opening of the ring structure and electrically connected to the ring structure, a heat spreader attached to a top surface of the ring structure, and an output signal lead configured to send out RF output signals generated by the RF die. Herein, the heat spreader covers a portion of the top surface of the ring structure at an output side of the package, and the output signal lead is attached to a top surface of the heat spreader. As such, the RF output signals are capable of being transmitted from the RF die to the output signal lead through the ring structure and the heat spreader.

A light-emitting device includes: a resin package; and a first light-emitting element and a second light-emitting element. The resin package includes: a resin portion; a first lead having an upper surface and an end surface; a second lead having an upper surface and an end surface; and a recess having lateral surfaces and a bottom surface that includes a portion of the upper surface of the first lead and a portion of the upper surface of the second lead that are exposed from the resin portion. The first light-emitting element and the second light-emitting element are disposed in the recess. The first lead and the second lead are arranged in a first direction. The first light-emitting element and the second light-emitting element are arranged in a second direction perpendicular to the first direction.