Various implementations of a method of forming a semiconductor package may include forming a plurality of notches into the first side of a semiconductor substrate; applying a permanent coating material into the plurality of notches; forming a first organic material over the first side of the semiconductor substrate and the plurality of notches; thinning a second side of the semiconductor substrate opposite the first side one of to or into the plurality of notches; and singulating the semiconductor substrate through the permanent coating material into a plurality of semiconductor packages.

Implementations of a semiconductor device may include a semiconductor die including a first largest planar surface, a second largest planar surface and a thickness between the first largest planar surface and the second largest planar surface; and one of a permanent die support structure, a temporary die support structure, or any combination thereof coupled to one of the first largest planar surface, the second largest planar surface, the thickness, or any combination thereof where the semiconductor die may be coupled with one of a substrate, a leadframe, an interposer, a package, a bonding surface, or a mounting surface. The thickness may be between 0.1 microns and 125 microns.

A method of forming a package includes providing a die, which includes a substrate having a circuit, a first passivation layer on the substrate, a plurality of pads on the first passivation layer, and a second passivation layer disposed on the first passivation layer and covering the plurality of pads. The method also includes forming one or more trenches by etching the second passivation layer that overlies a portion of the first passivation layer on the outside of the plurality of pads, and forming an organic polymer overlying the die after the one or more trenches are formed, thereby forming the package.

A structure and method of forming are provided. The structure includes a dielectric layer disposed on a substrate. The structure includes a cavity in the dielectric layer, and a plurality of contacts positioned in the cavity and bonded to the substrate. A component is bonded to the plurality of contacts. Underfill is disposed in the cavity between the dielectric layer and the component. A plurality of connectors is on the dielectric layer, the connectors being connected through the dielectric layer to a conductor that is at a same level of metallization as the plurality of contacts.

A semiconductor package includes a lower package including a lower package substrate, a lower semiconductor chip disposed on the lower package substrate, and a lower mold layer disposed on the lower package substrate, and an upper package disposed on the lower package. The upper package includes an upper package substrate and an upper semiconductor chip disposed on the upper package substrate. The semiconductor package additionally includes connection terminals disposed between the lower and upper package substrates. The connection terminals comprise outermost connection terminals and inner connection terminals. The inner connection terminals are disposed between the lower semiconductor chip and outermost connection terminals. The semiconductor package further includes a first under-fill layer disposed between the lower package substrate and the upper package substrate. At least one of the outermost connection terminals is disposed outside of the lower mold layer.

Disclosed herein is a packaged wafer manufacturing method including the steps of forming a groove along each division line on the front side of a wafer, each groove having a depth greater than the finished thickness of the wafer, next removing a chamfered portion from the outer circumference of the wafer to thereby form a step portion having a depth greater than the depth of each groove, next setting a die of a molding apparatus on the bottom surface of the step portion of the wafer in the condition where a space is defined between the die and the wafer, and next filling a mold resin into this space. Accordingly, the device area of the wafer is covered with the mold resin and each groove of the wafer is filled with the mold resin to thereby obtain a packaged wafer.

A package is manufactured by placing a substrate (10), for example a lead frame, in a mold (30) with a protection flange (38) extending into a notch (14) in the substrate (10) around a contact surface (12). The protection flange (38) impedes molding compound from reaching the contact surface reducing the need for a deflash step.

A semiconductor device 100 includes a semiconductor element 12 having an electrode on a front surface, a wire 15 bonded to the electrode of the semiconductor element 12, a resin layer 22b covering a bonding portion of the wire 15 on the front surface of the semiconductor element 12, and a gel filler material 23 that seals the semiconductor element 12, the wire 15, and the resin layer 22b. By protecting the bonding portion of the wire 15 with the resin layer 22b, degradation of the wire 15 is ameliorated and the reliability of the semiconductor device 100 is improved.

A chip part includes a substrate that has an upper surface, a lower surface positioned on an opposite side of the upper surface, and a sidewall by which the upper surface and the lower surface are connected together and that has a plurality of concavo-convex portions formed on the sidewall from a side of the upper surface toward a side of the lower surface, a functional element formed at the side of the upper surface of the substrate, a first external electrode and a second external electrode that are arranged at the upper surface of the substrate so as to be electrically connected to the functional element, and a sidewall insulating film with which the sidewall of the substrate is coated so as to fill the plurality of concavo-convex portions formed on the sidewall of the substrate with the sidewall insulating film.

A method of forming a semiconductor structure includes forming first semiconductor devices over a first substrate, forming a first dielectric material layer over the first semiconductor devices, forming vertical recesses in the first dielectric material layer, such that each of the vertical recesses vertically extends from a topmost surface of the first dielectric material layer toward the first substrate, forming silicon nitride material portions in each of the vertical recesses; and locally irradiating a second subset of the silicon nitride material portions with a laser beam. A first subset of the silicon nitride material portions that is not irradiated with the laser beam includes first silicon nitride material portions that apply tensile stress to respective surrounding material portions, and the second subset of the silicon nitride material portions that is irradiated with the laser beam includes second silicon nitride material portions that apply compressive stress to respective surrounding material portions.