Various embodiments provide a bonding pad structure that is capable of handling increased bonding loads. In one embodiment, the bonding pad structure includes a continuous metal layer, a first discontinuous metal layer, a second discontinuous metal layer, and dielectric material. The first discontinuous metal layer and the second discontinuous metal layer each include a plurality of holes that are arranged in a pattern. The plurality of holes of the first discontinuous metal layer overlaps at least two of the plurality of holes of the second discontinuous metal layer. The dielectric material is formed between the metal layers and fills the plurality of holes of the first and second discontinuous metal layers.

A multilayer structure for a semiconductor device and a method of forming a multilayer structure for a semiconductor device. The multilayer structure comprises: a substrate having an electrically conductive portion thereon; a dielectric layer formed over the substrate; the dielectric layer comprising an opening over at least part of the electrically conductive portion; and a conductive pillar formed on the at least part of the electrically conductive portion; wherein the conductive pillar comprises walls defined by at least the opening of the dielectric layer and an opening of a patterned layer.

The gate electrode is provided on the gate insulating film. The interlayer insulating film is provided to cover the gate electrode. The interlayer insulating film includes a first insulating film which is in contact with the gate electrode, contains silicon atoms, and contains neither phosphorus atoms nor boron atoms, a second insulating film which is provided on the first insulating film and contains silicon atoms and at least one of phosphorus atoms and boron atoms, and a third insulating film which contains silicon atoms and contains neither phosphorus atoms nor boron atoms. The second insulating film has a first surface which is in contact with the first insulating film, a second surface opposite to the first surface, and a third surface which connects the first surface and the second surface. The third insulating film is in contact with at least one of the second surface and the third surface.

The present application discloses a method for fabricating a semiconductor device. The method for fabricating a semiconductor device includes providing a substrate, forming a pad structure above the substrate, and forming a top groove on a top surface of the pad structure.

A semiconductor structure and a method of manufacturing thereof are provided. The semiconductor includes a semiconductor integrated circuit device and a redistribution layer structure. The semiconductor integrated circuit device has a top surface and an electrode on the top surface. The redistribution layer structure is formed on the top surface. The redistribution layer structure includes an oxide layer, a nitride layer, a dielectric layer, a groove and a through via. The oxide layer and the nitride layer are formed on the top surface. The dielectric layer is formed on the nitride layer. The groove is formed at a topside of the dielectric layer and overlaps the electrode. The through via is formed at a bottom of the groove and extends within the electrode through the dielectric layer, the nitride layer and the oxide layer. The through via and the groove are filled with a conductive material.

A method of forming a package includes providing a die, which includes a substrate having a circuit, a first passivation layer on the substrate, a plurality of pads on the first passivation layer, and a second passivation layer disposed on the first passivation layer and covering the plurality of pads. The method also includes forming one or more trenches by etching the second passivation layer that overlies a portion of the first passivation layer on the outside of the plurality of pads, and forming an organic polymer overlying the die after the one or more trenches are formed, thereby forming the package.

Described herein is a method and a power semiconductor device produced by the method. The method includes: forming a structured metallization layer above a semiconductor substrate; forming a protective layer on the structured metallization layer; forming a first passivation over the structured metallization layer with the protective layer interposed between the first passivation and the structured metallization layer; structuring the first passivation to expose one or more regions of the protective layer; removing the one or more exposed regions of the protective layer to expose one or more parts of the structured metallization layer; and after structuring the first passivation and removing the one or more exposed regions of the protective layer, forming a second passivation on the first passivation and electroless plating the one or more exposed parts of the structured metallization layer.

A chip package and a fabrication method thereof are provided according to an embodiment of the invention. The chip package includes a semiconductor substrate containing a chip and having a device area and a peripheral bonding pad area. A plurality of conductive pads is disposed at the peripheral bonding pad area and a passivation layer is formed over the semiconductor substrate to expose the conductive pads. An insulating protective layer is formed on the passivation layer at the device area. A packaging layer is disposed over the insulating protective layer to expose the conductive pads and the passivation layer at the peripheral bonding pad area. The method includes forming an insulating protective layer to cover a plurality of conductive pads during a cutting process and removing the insulating protective layer on the conductive pads through an opening of a packaging layer.

Improved bump coplanarity for semiconductor device assemblies, and associated methods and systems are disclosed. In one embodiment, when openings in a passivation layer of a semiconductor device are formed to expose surfaces of bond pads, additional openings may also be formed in the passivation layer. The additional openings may have depths shallower than the openings extending to the surfaces of bond pads by leveraging partial exposures to the passivation layer using a leaky chrome process. Subsequently, when active bumps (pillars) are formed on the exposed surfaces of bond pads, dummy bumps (pillars) may be formed on recessed surfaces of the additional openings such that differences in heights above the surface of the passivation between the active bumps and the dummy bumps are reduced to improve coplanarity.

The present disclosure is directed to a die including a first contact with a first shape (e.g., a ring-shape contact) and second contact with a second shape different from the first shape (e.g., a cylindrical-shape contact). The first contact has an opening that extends through a central region of a surface of the first contact. A first solder portion is coupled to the surface of the first contact and the first solder portion has the first shape. A second solder portion is coupled to a surface of the second contact and the second solder portion has the second shape. The first solder portion and the second solder portion both have respective points furthest away from a substrate of the die. These respective points of the first solder portion and the second solder portion are co-planar with each other such that a standoff height of the die remains consistent when coupled to a PCB or an electronic component.