A semiconductor device architecture includes a silicon substrate having sidewalls that are passivated by encapsulating the sidewalls in dielectric materials having high electric field strength. Encapsulating all the sidewalls using high field strength dielectric materials eliminates electrical paths in air or vacuum and confines the electric fields in these high field strength materials, increasing the breakdown voltage relative to unencapsulated devices and allowing the device to withstand greater standoff voltages. In some cases, encapsulating the sidewalls in this manner can allow the device to withstand voltages of 500V or greater.

A semiconductor die includes a substrate, a first passivation layer over the substrate, and a second passivation layer over the first passivation layer and the substrate. The substrate has boundaries defined by a substrate termination edge. The first passivation layer is over the substrate such that it terminates at a first passivation termination edge that is inset from the substrate termination edge by a first distance. The second passivation layer is over the first passivation layer and the substrate such that it terminates at a second passivation termination edge that is inset from the substrate termination edge by a second distance. The second distance is less than the first distance such that the second passivation layer overlaps the first passivation layer.

A semiconductor package includes a first integrated circuit, a first conductive via, a second conductive via, a second integrated circuit, a third conductive via and an encapsulant. The first conductive via is disposed in a first passivation layer over the first integrated circuit. The second conductive via is disposed in a second passivation layer over the first passivation layer. The second conductive via is electrically connected to the first conductive via. The third conductive via is disposed over the second integrated circuit, wherein a surface of the third conductive via is substantially coplanar with a surface of the third conductive via. The encapsulant encapsulates the first integrated circuit, the first passivation layer, the second passivation layer, the second integrated circuit and the third conductive via.

Disclosed is a semiconductor device comprising a semiconductor substrate, a conductive pad on a first surface of the semiconductor substrate, a passivation layer on the first surface of the semiconductor substrate, the passivation layer having a first opening that exposes the conductive pad, an organic dielectric layer on the passivation layer, the organic dielectric layer having a second opening, and a bump structure on the conductive pad and in the first and second openings. The organic dielectric layer includes a material different from a material of the passivation layer. The second opening is spatially connected to the first opening and exposes a portion of the passivation layer. The bump structure includes a pillar pattern in contact with the passivation layer and the organic dielectric layer.

A package that includes a first redistribution portion, a second redistribution portion, a third redistribution portion, a first encapsulation layer coupled to the first redistribution portion and the third redistribution portion, a first discrete device encapsulated by the first encapsulation layer, wherein the first discrete device is located between the first redistribution portion and the third redistribution portion, a second encapsulation layer coupled to the first redistribution portion and the second redistribution portion, and a second discrete device encapsulated by the second encapsulation layer, wherein the second discrete device is located between the first redistribution portion and the second redistribution portion.

A semiconductor device and a method of producing the semiconductor device are described. The semiconductor device includes: a semiconductor substrate; a metallization layer over the semiconductor substrate; a plating over the metallization layer, the plating including NiP; a passivation over the metallization layer and laterally adjacent the plating such that a surface of the plating that faces away from the semiconductor substrate is uncovered by the passivation, wherein a seam is present along an interface between the passivation and the plating; and a structure that covers the seam along a periphery of the plating and delimits a bondable area for the plating. The structure extends from the periphery of the plating onto the passivation. The structure includes an imide having a curing temperature below a recrystallization temperature of the NiP or an oxide having a deposition temperature below the recrystallization temperature of the NiP.

In some embodiments, an integrated chip (IC) is provided. The IC includes a metallization structure disposed over a semiconductor substrate, where the metallization structure includes an interconnect structure disposed in an interlayer dielectric (ILD) structure. A passivation layer is disposed over the metallization structure, where an upper surface of the interconnect structure is at least partially disposed between opposite inner sidewalls of the passivation layer. A sidewall spacer is disposed along the opposite inner sidewalls of the passivation layer, where the sidewall spacer has rounded sidewalls. A conductive structure is disposed on the passivation layer, the rounded sidewalls of the sidewall spacer, and the upper surface of the interconnect structure.

In an embodiment, a device includes: a processor die including circuit blocks, the circuit blocks including active devices of a first technology node; a power gating die including power semiconductor devices of a second technology node, the second technology node larger than the first technology node; and a first redistribution structure including first metallization patterns, the first metallization patterns including power supply source lines and power supply ground lines, where a first subset of the circuit blocks is electrically coupled to the power supply source lines and the power supply ground lines through the power semiconductor devices, and a second subset of the circuit blocks is permanently electrically coupled to the power supply source lines and the power supply ground lines.

A conductive structure, a semiconductor package and methods of forming the same are disclosed. A conductive structure includes a metal feature, an insulating layer and a nitridized metal layer. The metal feature is disposed over a substrate and includes a lower metal pattern and an upper metal pattern over the lower metal pattern. The insulating layer surrounds the metal feature. The nitridized metal layer is disposed between the lower metal pattern and the upper metal pattern.

Semiconductor package includes interposer, dies, encapsulant. Each die includes active surface, backside surface, side surfaces. Backside surface is opposite to active surface. Side surfaces join active surface to backside surface. Encapsulant includes first material and laterally wraps dies. Dies are electrically connected to interposer and disposed side by side on interposer with respective backside surfaces facing away from interposer. At least one die includes an outer corner. A rounded corner structure is formed at the outer corner. The rounded corner structure includes second material different from first material. The outer corner is formed by backside surface and a pair of adjacent side surfaces of the at least one die. The side surfaces of the pair have a common first edge. Each side surface of the pair does not face other dies and has a second edge in common with backside surface of the at least one die.