The present disclosure is directed to a semiconductor device and a manufacturing method thereof, which relate to the field of semiconductor technologies. The semiconductor device includes a fin ESD element. The method includes: providing a substrate structure, where the substrate structure includes a semiconductor substrate, and a semiconductor fin for the fin ESD element and an electrode structure surrounding a part of the semiconductor fin that are on the semiconductor substrate; forming a second dielectric layer on the substrate structure to cover the electrode structure; forming, in the second dielectric layer, a trench extending to a top of the electrode, where the trench is on the electrode and extends along a longitudinal direction of the electrode, and a transverse width of the trench is less than or equal to a transverse width of the top of the electrode; and filling the trench with a metal material, so as to form a metal heat sink that is on the top of the electrode and is coupled to the electrode. With the present disclosure, an existing structure of an ESD element is improved, so that a metal heat sink can effectively improve a head dissipation effect of a device, thereby improving a performance of the device.

A 3D integrated circuit device can include a substrate, a thermal interface layer and at least one die, at least one device layer bonded between the thermal interface layer and the at least one die, wherein the thermal interface layer enhances conductive heat transfer between the at least one device layer and the at least one die, and a heat sink located adjacent to a heat spreader, wherein the thermal interface layer, the at least one die and the at least one device layer are located between the heat spreader and the substrate.

A heat dissipation apparatus is provided. The apparatus includes: a bracket assembly including an accommodation portion used for accommodating a heat source component, a first opening, and a second opening; a heat sink. A heat conducting protrusion is disposed on a first surface of the heat sink, and the heat conducting protrusion extends into the accommodation portion through the second opening; and guide grooves are respectively provided in two side surfaces of the heat sink, and an extension direction of the guide grooves is inclined toward the first surface in an insertion direction of the heat source component; and fastening assemblies, each including a connecting member and a pressing member, where the pressing members are disposed on two sides of the bracket assembly, one end of the connecting member is slidably assembled in a guide groove located on a same side, and the other end abuts against a pressing member.

A heat dissipation device includes a base plate and a plurality of fins arranged on the base plate. Each fin includes a fin body including a first metal sheet and a second metal sheet coupled to each other, wherein the fin body is curved and includes a first portion and a second portion transverse to the first portion, an evaporation channel defined in the first portion, one or more connecting channels disposed in the first portion and in fluid communication with the evaporation channel, a condensation channel defined in the second portion, and one or more auxiliary channels disposed in the second portion and in fluid communication with the one or more connecting channels and the condensation channel.

Provided is an imaging device capable of efficiently dissipating heat from an imaging element. An imaging device 100 includes: an imaging element substrate 4 on which an insulating layer 51 and a conductor layer 52 are stacked and an imaging element 41 is mounted; and a housing 1 that accommodates the imaging element substrate 4. The surface of the imaging element substrate 4 has a mounting region 45 on which an electronic component 43 including the imaging element 41 is mounted, a covered region 46 in which the conductor layer 52 is covered with the insulating layer 51, and an exposed region 47 in which the conductor layer 52 is exposed from the insulating layer 51, and the exposed region 47 is connected to the housing 1.

Exfoliated graphite materials, and composite materials including exfoliated graphite, having enhanced through-plane thermal conductivity can be used in thermal management applications and devices. Methods for making such materials and devices involve processing exfoliated graphite materials such as flexible graphite to orient or re-orient the graphite flakes in one or more regions of the material.

Various embodiments may provide a semiconductor package. The semiconductor package may include a semiconductor chip, a first mold compound layer at least partially covering the semiconductor chip, and a redistribution layer over the first mold compound layer, the redistribution layer including one or more electrically conductive lines in electrical connection with the semiconductor chip. The semiconductor package may additionally include a second mold compound layer over the redistribution layer, and an antenna array over the second mold compound layer, the antenna array configured to be coupled to the one or more electrically conductive lines.

Various systems and methods for configuring a pluggable computing device are described herein. A pluggable computing device may be configured to be compatible with a pluggable host system using a default communication channel to obtain configuration settings and configure a programmable logic device on the pluggable computing device. The pluggable computing device may perform chain of trust processing on the pluggable host system. The pluggable computing device may be disposed on a compute card, which may include a heat sink in a particular configuration.

In a layered bonding material 10, a coefficient of linear expansion of a base material 11 is 5.5 to 15.5 ppm/K and a first surface and a second surface of the base material 11 are coated with pieces of lead-free solder 12a and 12b.

This application discloses a chip package assembly, an electronic device, and a preparation method of a chip package assembly. The chip package assembly includes a package substrate, a chip, and a heat dissipation part. The package substrate includes an upper conductive layer, a lower conductive layer, and a conductive part connected between the upper conductive layer and the lower conductive layer. The chip includes a front electrode and a back electrode that are disposed opposite each other, the chip is embedded in the package substrate, the conductive part surrounds the chip, the front electrode is connected to the lower conductive layer, and the back electrode is connected to the upper conductive layer. The heat dissipation part is connected to a surface of the upper conductive layer that is away from the chip. The upper conductive layer, the lower conductive layer, and the conductive part each conduct heat.