A heteroexpitaxial structure comprises a substrate having a silicon-on-insulator structure. Applied to one surface of a layer of single-crystal silicon having a (111) surface orientation is a layer of polycrystalline diamond. Formed on the other surface of said layer of (111) surface orientation single-crystal silicon of the silicon-on-insulator structure from which layers of a dielectric and another single-crystal silicon layer are first removed is an epitaxial structure of a semiconductor device based on wide-bandgap III-nitrides.

A method for forming a board assembly includes identifying a location of a hot-spot on a semiconductor die and cutting an opening in a circuit board corresponding to the location of the identified hot-spot. A Chemical Vapor Deposition Diamond (CVDD) window is inserted into the opening. A layer of thermally conductive paste is applied over the CVDD window. The semiconductor die is placed over the layer of thermally conductive paste such that the CVDD window underlies the hot-spot and such that a surface of the semiconductor die is in direct contact with the layer of thermally conductive paste.

A thermal interface material for forming a layer conformable between a first heat transfer surface and an opposing second heat transfer surface to provide a thermal pathway therebetween includes: a matrix material composing 10 wt. % or less of the thermal interface material; a filler dispersed in the matrix material composing at least 80 wt. % of the thermal interface material, the filler including: particles of a first material having a nominal dimension in a range from 1 micron to 100 microns, the first material composing at least 40 wt. % of the thermal interface material; and diamond particles having a nominal dimension of 1,000 nm or less, the diamond particles composing 0.5 wt. % to 5 wt. % of the thermal interface material.

A method and apparatus for conducting heat away from a semiconductor die are disclosed. A board assembly is disclosed that includes a first circuit board having an opening extending through the first circuit board. A Chemical Vapor Deposition Diamond (CVDD) window extends within the opening. A layer of thermally conductive paste extends over the CVDD window. A semiconductor die extends over the layer of thermally conductive paste such that a hot-spot on the semiconductor die overlies the CVDD window.

A 3D semiconductor device, the device comprising: a first level, wherein said first level comprises a first layer, said first layer comprising first transistors, and wherein said first level comprises a second layer, said second layer comprising first interconnections; a second level overlaying said first level, wherein said second level comprises a third layer, said third layer comprising second transistors, and wherein said second level comprises a fourth layer, said fourth layer comprising second interconnections; and a plurality of connection paths, wherein said plurality of connection paths provides connections from a plurality of said first transistors to a plurality of said second transistors, wherein said second level is bonded to said first level, wherein said bonded comprises oxide to oxide bond regions, wherein said bonded comprises metal to metal bond regions, and wherein said first level comprises a plurality of trench capacitors.

A semiconductor structure includes a glass substrate and a device wafer. The glass substrate includes a glass layer, a heat dissipation layer and a silicon nitride layer stacked from bottom to top. The device wafer includes at least one semiconductor device integrated in a device layer situated over the silicon nitride layer of the glass substrate. Or, the glass substrate includes a glass layer and a silicon nitride layer stacked from bottom to top. The device wafer includes at least one semiconductor device integrated in a device layer, and a heat dissipation layer is stacked on the device layer, wherein the heat dissipation layer is bonded with the silicon nitride layer of the glass substrate. The present invention also provides a method of wafer bonding for manufacturing said semiconductor structure.

A 3D semiconductor device, the device including: a first level, wherein said first level comprises a first layer, said first layer comprising first transistors, and wherein said first level comprises a second layer, said second layer comprising first interconnections; a second level overlaying said first level, wherein said second level comprises a third layer, said third layer comprising second transistors, and wherein said second level comprises a fourth layer, said fourth layer comprising second interconnections; and a plurality of connection paths, wherein said plurality of connection paths provides connections from a plurality of said first transistors to a plurality of said second transistors, wherein said second level is bonded to said first level, wherein said bonded comprises oxide to oxide bond regions, wherein said bonded comprises metal to metal bond regions, wherein said second level comprises at least one Electrostatic discharge (ESD) circuit.

Various semiconductor chip devices with stacked chips are disclosed. In one aspect, a semiconductor chip device is provided. The semiconductor chip device includes a first semiconductor chip that has a floor plan with a high heat producing area and a low heat producing area. At least one second semiconductor chip is stacked on the low heat producing area. The semiconductor chip device also includes means for transferring heat from the high heat producing area.

Described herein is an apparatus and a method for thermal management. The apparatus includes an integrated circuit (IC) including at least one field effect transistor, wherein each at least one FET comprises a gate, a drain, and a source; and a diamond substrate bonded to the gate, the drain, and the source of each of the at least one FETs, wherein the diamond substrate includes at least one tuning element. The method includes forming at least one FET on an IC, wherein each at least one FET comprises a gate, a drain, and a source; and bonding a diamond substrate to the gate, the drain, and the source of each of the at least one FETs, wherein the diamond substrate includes at least one tuning element.

Microelectronic die package structures formed according to some embodiments may include a substrate and a die having a first side and a second side. The first side of the die is coupled to the substrate, and a die backside layer is on the second side of the die. The die backside layer includes a plurality of unfilled grooves in the die backside layer. Each of the unfilled grooves has an opening at a surface of the die backside layer, opposite the second side of the die, and extends at least partially through the die backside layer.