A semiconductor device structure is provided. The semiconductor device structure includes a substrate and a magnetic element over the substrate. The semiconductor device structure also includes an isolation layer extending exceeding edges the magnetic element. The isolation layer contains a polymer material. The semiconductor device structure further includes a conductive line over the isolation layer and extending exceeding the edges of the magnetic element.

A method for forming a semiconductor device is provided. The method includes the following steps: providing a semiconductor substrate; forming a pad layer on the semiconductor substrate; forming a first passivation layer on the pad layer; forming a second passivation layer on the first passivation layer, wherein the second passivation layer comprises polycrystalline silicon; forming an oxide layer on the second passivation layer; forming a nitride layer on the oxide layer; removing a portion of the oxide layer and a portion of the nitride layer to expose a portion of the second passivation layer; removing the portion of the second passivation layer that has been exposed to expose a portion of the first passivation layer; and removing the portion of the first passivation layer that has been exposed to expose a portion of the pad layer.

A semiconductor device is provided. The semiconductor device includes a dielectric layer over a substrate and a contact structure embedded in the dielectric layer. The contact structure includes a diffusion barrier contacting the dielectric layer, the diffusion barrier including a titanium (Ti)-containing alloy. The contact structure further includes a liner on the diffusion barrier, the liner including a noble metal. The contact structure further includes a conductive plug on the liner.

An embodiment relates to a method for manufacturing a semiconductor device. The method includes providing a semiconductor body including a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type interposed between the first semiconductor region and a first surface of the semiconductor body. The method further includes forming a first contact layer over the first surface of the semiconductor body. The first contact layer forms a direct electrical contact to the second semiconductor region. The method further includes forming a contact trench extending into the semiconductor body by removing at least a portion of the second semiconductor region. The method further includes forming a second contact layer in the contact trench. The second contact layer is directly electrically connected to the semiconductor body at a bottom side of the contact trench.

An interconnect structure may include a graphene-metal barrier on a substrate and a conductive layer on the graphene-metal barrier. The graphene-metal barrier may include a plurality of graphene layers and metal particles on grain boundaries of each graphene layer between the plurality of graphene layers. The metal particles may be formed at a ratio of 1 atom % to 10 atom % with respect to carbon of the plurality of graphene layers.

A microelectronic device comprises a stack structure comprising insulative levels vertically interleaved with conductive levels. The conductive levels individually comprise a first conductive structure, and a second conductive structure laterally neighboring the first conductive structure, the second conductive structure exhibiting a concentration of β-phase tungsten varying with a vertical distance from a vertically neighboring insulative level. The microelectronic device further comprises slot structures vertically extending through the stack structure and dividing the stack structure into block structures, and strings of memory cells vertically extending through the stack structure, the first conductive structures between laterally neighboring strings of memory cells, the second conductive structures between the slot structures and strings of memory cells nearest the slot structures. Related memory devices, electronic systems, and methods are also described.

A semiconductor device is provided. The semiconductor device includes a dielectric layer over a substrate and a contact structure embedded in the dielectric layer. The contact structure includes a diffusion barrier contacting the dielectric layer, the diffusion barrier including a titanium (Ti)-containing alloy. The contact structure further includes a liner on the diffusion barrier, the liner including a noble metal. The contact structure further includes a conductive plug on the liner.

In one example, an electronic device includes a substrate with a substrate front side, a substrate rear side opposite to the substrate front side, a substrate body, and conductive vias extending through the substrate body from the substrate front side to the substrate rear side. A first construct is over the substrate front side and includes a first dielectric structure and first conductors embedded in the first dielectric structure and coupled to the conductive vias. A second construct is over the substrate rear side and includes a second dielectric structure and second conductors embedded in the second dielectric structure and coupled to the conductive vias. One or more of the first conductors or the second conductors define one or more passive devices. Other examples and related methods are also disclosed herein.

An integrated circuit comprises a first circuit element operably connected to a second circuit element by a nanowire interconnect; wherein the nanowire interconnect comprises molybdenum phosphide (MoP), tungsten phosphide (WP.sub.2), or niobium phosphide (NbP). A nanowire interconnect can be made by providing a template nanowire; providing a phosphine source; producing phosphine from the phosphine source; and contacting the template nanowire with the phosphine. The nanowire interconnect demonstrates low resistance.

Embodiments disclosed herein include electronic packages with first level interconnects that comprise a first layer. In an embodiment, the electronic package comprises a package substrate and a pad on the package substrate. In an embodiment, the pad comprises copper. In an embodiment, a first layer is over the pad. In an embodiment, the first layer comprises iron. In an embodiment, a solder is over the first layer, and a die is coupled to the package substrate by the solder.