An electronic device, and method of producing an electronic device, are disclosed. The electronic device comprises a diamond substrate 10. Within the substrate 10 is an electrode 12, known as a ‘buried electrode’. A first surface 14 of the substrate 10 is provided with a conductive contact region 16. The electrode 12 is electrically connected to the contact region 16 by a conductive pillar 18. The electrode, conductive pillar, and contact region comprise modified portions of the diamond substrate, for example comprising at least one of graphitic carbon, amorphous carbon, and a combination of SP2 and SP3 phases of carbon, formed from a portion of diamond substrate.

A Schottky diode comprises: a first electrode; a second electrode; and a body of semiconductive material connected to the first electrode at a first interface and connected to the second electrode at a second interface, wherein the first interface comprises a first planar region lying in a first plane and the first electrode has a first projection onto the first plane in a first direction normal to the first plane, the second interface comprises a second planar region lying in a second plane and the second electrode has a second projection onto the first plane in said first direction, at least a portion of the second projection lies outside the first projection, said second planar region is offset from the first planar region in said first direction, and one of the first interface and the second interface provides a Schottky contact.

A semiconductor apparatus includes a plurality of semiconductor devices with a single substrate, a plurality of trench regions, each trench region including a trench, wherein the single substrate includes a substrate layer, a first epitaxial layer of a first conductivity type, disposed on the substrate layer, and a second epitaxial layer of a second conductivity type, disposed on the first epitaxial layer, wherein each trench of the plurality of trench regions extends through the second epitaxial layer and into the first epitaxial layer, thereby isolating adjacent semiconductor devices of the plurality of semiconductor devices.

An electronic circuit having a first terminal and a second terminal. The electronic circuit includes a plurality of diodes connected in parallel, the plurality of diodes including a first diode and a second diode that respectively have applied thereto a first forward voltage and a second forward voltage, the second forward voltage being higher than the first forward voltage. A first path and a second path are formed from the first terminal, respectively via the first diode and the second diode, to the second terminal. An inductance of the first path is larger than an inductance of the second path.

A transient voltage suppressor (TVS) device uses a punch-through silicon controlled rectifier (SCR) structure for the low-side steering diode where the punch-through SCR structure realizes low capacitance at the protected node. In some embodiments, the punch-through silicon controlled rectifier of the low-side steering diode includes a first doped region formed in a first epitaxial layer, a first well formed spaced apart from the first doped region where the first well is not biased to any electrical potential, and a second doped region formed in the first well. The first doped region, the first epitaxial layer, the first well and the second doped region form the punch-through silicon controlled rectifier, with the first doped region forming the anode and the second doped region forming the cathode of the punch-through silicon controlled rectifier.

A power device which is formed on a semiconductor substrate includes: a lateral insulated gate bipolar transistor (LIGBT), a PN diode and a clamp diode. The PN diode is connected in parallel to the LIGBT. The clamp diode has a clamp forward terminal and a clamp reverse terminal, which are electrically connected to a drain and a gate of the LIGBT, to clamp a gate voltage applied to the gate not to be higher than a predetermined voltage threshold.

The electronic device having a Schottky diode includes first and second electrodes disposed on a semiconductor substrate and spaced apart from each other. A first semiconductor region is formed within the semiconductor substrate. The first semiconductor region may include a first surface portion in contact with the second electrode, forming a Schottky diode with the second electrode. A second semiconductor region having the same conductivity-type as the first semiconductor region and overlapping the first electrode is formed within the semiconductor substrate. A third semiconductor region having a different conductivity-type from the first semiconductor region, and having a first portion and a second portion spaced apart from each other, is formed within the semiconductor substrate. An isolation region is disposed between the second and the third semiconductor regions. The isolation region includes a first isolation portion and a second isolation portion spaced apart from each other.

A diode according to the present invention includes a semiconductor layer of a first conductivity type having an impurity concentration of 1×10.sup.16 cm.sup.−3 to 2.4×10.sup.17 cm.sup.−3, a Zener diode region of a second conductivity type formed selectively in the semiconductor layer and forming a pn junction with the semiconductor layer, a Schottky metal disposed on the semiconductor layer, forming a Schottky junction with the semiconductor layer, and having a work function of 3 eV to 6 eV, and a JBS (junction barrier Schottky) structure including a plurality of second conductivity type regions formed selectively in the Schottky junction region of the semiconductor layer.

Embodiments of the present disclosure relate to the field of semiconductors, and provide a semiconductor structure and a fabrication method thereof, and a memory. The semiconductor structure includes: a base substrate including a first side and a second side opposite to each other; a first device layer including a first device, the first device layer being arranged on the first side of the base substrate; and a second device layer including a second device, the second device layer being arranged on the second side of the base substrate. At least part of the first device and at least part of the second device share a first doped region.

A method can be used to make a semiconductor device. A number of projecting regions are formed over a first semiconductor layer that has a first conductivity type. The first semiconductor layer is located on an insulating layer that overlies a semiconductor substrate. The projecting regions are spaced apart from each other. Using the projecting regions as an implantation mask, dopants having a second conductivity type are implanted into the first semiconductor layer, so as to form a sequence of PN junctions forming diodes in the first semiconductor layer. The diodes vertically extend from an upper surface of the first semiconductor layer to the insulating layer.