A display device includes a first substrate, a light-emitting element, a light conversion layer, and a color filter layer. The light-emitting element is disposed on the first substrate. The light conversion layer is disposed on the light-emitting element. In addition, the color filter layer is overlapped the light-emitting element and the light conversion layer.

A change in electrical characteristics of a semiconductor device including an interlayer insulating film over a transistor including an oxide semiconductor as a semiconductor film is suppressed. The structure includes a first insulating film which includes a void portion in a step region formed by a source electrode and a drain electrode over the semiconductor film and contains silicon oxide as a component, and a second insulating film containing silicon nitride, which is provided in contact with the first insulating film to cover the void portion in the first insulating film. The structure can prevent the void portion generated in the first insulating film from expanding outward.

Various embodiments provide a thin and lightweight organic light-emitting display device having a touch sensor. The organic light-emitting display device having a touch sensor includes a touch-sensing line and a touch-driving line disposed on an encapsulation stack so as to overlap each other. The touch-sensing line and the touch-driving line overlap each other in a location in which an organic touch dielectric film and an inorganic touch dielectric film are disposed therebetween, thereby preventing the generation of spots in the event of degeneration of the organic touch dielectric film and preventing damage to the organic touch dielectric film.

A display panel includes a base layer having a first region and a bent second region. An inorganic layer is disposed on the base layer. A lower groove is formed within the inorganic layer and overlaps the second region. A first thin-film transistor is disposed on the inorganic layer and includes a silicon semiconductor pattern overlapping the first region. A second thin-film transistor is disposed on the inorganic layer and includes an oxide semiconductor pattern overlapping the first region. Insulating layers overlap the first and second regions. An upper groove is formed within the insulating layers. A signal line electrically connects the second thin-film transistor. An organic layer overlaps the first and second regions and is disposed in the lower and upper grooves. A luminescent device is disposed on the organic layer and overlaps the first region.

The present application relates to the field of display technology and, in particular, to an array substrate, a manufacturing method of the array substrate, and a display device. An array substrate comprises: a base substrate having a pixel display area and a gate drive circuit area; a first thin film transistor formed in the pixel display area, the first thin film transistor comprising a first gate insulating layer; a second thin film transistor formed in the gate drive circuit area, the second thin film transistor comprising a second gate insulating layer, where a thickness of the second gate insulating layer is smaller than a thickness of the first gate insulating layer.

A pixel array substrate including a substrate, a plurality of pixel structures, and a flat layer is provided. The pixel structures are correspondingly disposed in pixel regions of the substrate. At least one of pixel structure includes an active element, a reflective electrode, and an auxiliary electrode. The reflective electrode is electrically connected to the active element. The auxiliary electrode is electrically connected to the reflective electrode and the active element. A vertical projection of the reflective electrode on the substrate overlaps a vertical projection of the auxiliary electrode on the substrate. An area of the vertical projection of the reflective electrode on the substrate is not greater than an area of the vertical projection of the auxiliary electrode on the substrate. The flat layer is disposed between the auxiliary electrode and the active element. A display device by using the pixel array substrate is also provided.

Disclosed herein is a display substrate comprising: a support; a pixel on the support and with a thin-film transistor (TFT) therein; and a barrier on the support, surrounding the pixel, and separated from the pixel by a trench; wherein the barrier comprises a protrusion extending from the support and configured to retard invasion of moisture and oxygen into the pixel; wherein the protrusion comprises a layer coplanar with a layer of the TFT. Also disclosed herein are a display panel with this display substrate and a system with this display panel.

An array substrate, a manufacturing method thereof, and a display panel are provided. The array substrate includes a bending area and a non-bending area, and further includes an inorganic stacked layer disposed on a substrate layer. A recess is formed on the inorganic stacked layer in the bending area. A plurality of first metal lines are disposed in the inorganic stacked layer at two sides of the bending area. A filling layer is filled in the recess. The array substrate further includes a second metal line disposed on the inorganic stacked layer and the filling layer, and the first metal lines at the two sides of the bending area form a lap joint by the second metal line.

A semiconductor device in which variation of characteristics is small is provided. A second insulator, an oxide, a conductive layer, and an insulating layer are formed over a first insulator; a third insulator and fourth insulator are deposited to be in contact with the first insulator; a first opening reaching the oxide is formed in the conductive layer, the insulating layer, the third insulator, and the fourth insulator; a fifth insulator, a sixth insulator, and a conductor are formed in the first opening; a seventh insulator is deposited over the fourth insulator, the fifth insulator, and the sixth insulator; a mask is formed in a first region over the seventh insulator in a top view; oxygen is implanted into a second region not overlapping the first region in the top view; heat treatment is performed; a second opening reaching the fourth insulator is formed in the seventh insulator; and heat treatment is performed.

The present invention is for a backplane substrate including an in-cell type touch panel advantageous to reducing the number of masks and the number of processes, a liquid crystal display device including the same, and a method of manufacturing the same, includes a plurality of interlayer dielectric layers disposed above a drain electrode of a thin film transistor are simultaneously patterned after forming a sensing line and a common electrode.