Patent classifications
H01L27/1251
ORGANIC THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME AND THIN FILM TRANSISTOR ARRAY PANEL AND ELECTRONIC DEVICE
An organic thin film transistor includes a gate electrode, an organic semiconductor layer overlapped with the gate electrode, a hydrophilic nanolayer on the organic semiconductor layer, and a source electrode and a drain electrode electrically connected to the organic semiconductor layer.
Display panel, method of manufacturing the same, method of driving the same and display device
A display panel, a method of manufacturing the display panel, a method of driving the display panel and a display device are provided. The display panel includes an array substrate and a plurality of micro light-emitting diodes arranged on the array substrate, and further includes: a photoelectric conversion structure in a one-to-one correspondence with a micro light-emitting diode, the photoelectric conversion structure is located on a side of the corresponding micro light-emitting diode facing the array substrate, connected to the corresponding micro light-emitting diode, and configured to convert a received light signal emitted by the micro light-emitting diode into an electrical signal, and charge the corresponding micro light-emitting diode by using the electrical signal. The display panel is used for display.
Display device and production method for display device
A display device according to the disclosure includes a substrate, a first transistor provided on the substrate, and a second transistor provided on the substrate, not overlapping the first transistor. The first transistor includes a polycrystalline silicon layer provided on the substrate, a first insulating film provided on the polycrystalline silicon layer, a first gate electrode provided on the first insulating film, and a second insulating film provided on the first gate electrode. The second transistor includes an oxide semiconductor layer provided on the first insulating film, a third insulating film provided on the oxide semiconductor layer, and a second gate electrode provided on the third insulating film. The first and third insulating films are SiOx films. The second insulating film is an SiNx film including hydrogen, and is provided overlapping the polycrystalline silicon layer, and is provided not overlapping the oxide semiconductor layer.
Organic light-emitting display panel and display device
An organic light-emitting display panel and a display device are provided. The organic light-emitting display panel includes a control circuit. The control circuit includes a plurality of transistors. The plurality of transistors includes at least one first-type transistor, and each of the at least one first-type transistor has a channel width and a channel length, one of which is greater than five times the other one. Each of the at least one first-type transistor is a single-gate transistor.
Display device and manufacturing method thereof
A display device includes a substrate, a first electrode disposed on the substrate, a second electrode disposed on the substrate and spaced apart from the first electrode, a plurality of first protruding electrodes disposed on the first electrode, a plurality of second protruding electrodes disposed on the second electrode, and a plurality of light emitting elements electrically connected to the plurality of first protruding electrodes and the plurality of second protruding electrodes.
Pixel, a display device including same, and a method for manufacturing the display device
A pixel including: a light emitting element; a first transistor between a first node and the light emitting element to control current flowing from a first driving power source through the light emitting element to a second driving power source; a second transistor between a data line and the first transistor, and tamed on by a first scan signal; a third transistor between the first transistor and first node, and turned on by the first scan signal; and a fourth transistor between an initialization power line and the first node, and turned on by a second scan signal, wherein the fourth transistor is a tunneling field effect transistor including a source and drain area that are spaced apart from each other and have opposite conductivities, a channel area between the source area and drain area, and a gate electrode on the channel area with a gate insulating layer therebetween.
Display device
A display device includes a substrate including a pixel area and a transmission area, and a pixel circuit disposed in the pixel area. The pixel circuit includes a first thin-film transistor included in a first multi-layer film, and a second thin-film transistor included in a second multi-layer film on the first multi-layer film. The first thin-film transistor and the second thin-film transistor are electrically connected to each other. The display device also includes a display element disposed on the second multi-layer film and including a pixel electrode electrically connected to the second thin-film transistor via a contact hole defined in the second multi-layer film, an opposite electrode facing the pixel electrode, and an intermediate layer between the pixel electrode and the opposite electrode.
Display panel and display device having first transistor including first drain electrode and first source electrode made of different materials
A display panel and a display device are provided. The display panel includes a substrate, a driving unit including a first transistor, and at least one light-emitting element. The first transistor includes a first source electrode and a first drain electrode that are located at a side of the at least one light-emitting element close to the substrate. Each of the at least one light-emitting element includes a first electrode, a light-emitting layer, and a second electrode that are sequentially stacked. The first electrode is connected to the first drain electrode through a first via, and the first drain electrode is located at a side of the first source electrode close to the substrate. A material of the first drain electrode is different from a material of the first source electrode.
Display apparatus comprising different types of thin film transistors with compact design and method for manufacturing the same
Discussed is a display apparatus capable of realizing a high resolution and a small power consumption, and a method for manufacturing the same, wherein the display apparatus includes a bottom gate type first thin film transistor disposed in a display area, and a top gate type second thin film transistor disposed in a non-display area.
Display Apparatus Having a Connecting Electrode which Crosses a Bending Area
A display apparatus having a connection electrode which crosses a bending area may be provided. The connection electrode may be disposed on a device substrate including a bending area between a display area and a pad area. The connection electrode may connect the display area and the pad area across the bending area. The connection electrode may have a stacked structure of the lower connecting electrode and the upper connecting electrode. A light-emitting device, an encapsulating element and a touch electrode may be sequentially stacked on the display area of the device substrate. The upper connecting electrode may include the same material as the touch electrode. Thus, in the display apparatus, the disconnection of the connection electrode due to bending stress and external impact may be reduced.