A highly reliable semiconductor device is provided. The semiconductor device includes first to third transistors and a capacitor. In the first transistor, one of a source and a drain is supplied with a first signal, the other of the source and the drain is connected to a gate of the second transistor and one electrode of the capacitor, and a gate is supplied with a second pulse signal. In the second transistor, one of a source and a drain is supplied with a first pulse signal, and the other of the source and the drain is connected to the other electrode of the capacitor and one of a source and a drain of the third transistor. In the third transistor, the other of the source and the drain is supplied with the first potential, and a gate is supplied with a second signal that is an inverted signal of the first signal. The first pulse signal is a clock signal, and the second pulse signal has a duty ratio of 55% or lower.

An object is to provide a display device with excellent display characteristics, where a pixel circuit and a driver circuit provided over one substrate are formed using transistors which have different structures corresponding to characteristics of the respective circuits. The driver circuit portion includes a driver circuit transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using a metal film, and a channel layer is formed using an oxide semiconductor. The pixel portion includes a pixel transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using an oxide conductor, and a semiconductor layer is formed using an oxide semiconductor. The pixel transistor is formed using a light-transmitting material, and thus, a display device with higher aperture ratio can be manufactured.

An array substrate has a plurality of sub-pixel regions. The array substrate includes: a substrate; a first transistor and a second transistor that are disposed on a side of the substrate and located in each sub-pixel region; and a first pixel electrode and a second pixel electrode that are disposed on the side of the substrate and located in the sub-pixel region. The first pixel electrode and the second pixel electrode are insulated from each other; the first pixel electrode is electrically connected to the first transistor, and the second pixel electrode is electrically connected to the second transistor.

A thin film transistor array substrate and a display device are provided. The thin film transistor array substrate includes a first semiconductor layer, a second semiconductor layer, a first gate electrode, a conductive layer, a second gate electrode, a third gate electrode, and an intermediate insulating layer. The first semiconductor layer and the second semiconductor layer are made of different semiconductor materials. The first gate electrode and the conductive layer overlap with the first semiconductor layer. The second gate electrode and the third gate electrode overlap with the second semiconductor layer. The intermediate insulating layer is disposed between the second semiconductor layer and the second gate electrode.

A photomask, a method of manufacturing an array substrate, and a display panel are provided. The photomask includes a photomask line of a first conductive portion, a photomask line of a second conductive portion spaced apart from the photomask line of the first conductive portion, and a bridging line. Two opposite ends of the bridging line are respectively connected to the photomask line of the first conductive portion and the photomask line of the second conductive portion, and a width of the bridging line is less than a preset width.

The present disclosure discloses a display panel, a method for manufacturing a display panel, and a display device, and belongs to the field of liquid crystal display technologies. The display panel includes an array substrate, a counter substrate, and a liquid crystal layer between the array substrate and the counter substrate. For the array substrate, a diffuse reflection layer is sequentially laminated on the array substrate. The array substrate includes a first base substrate, and a thin film transistor array, a diffuse reflection layer, and a first planarization layer that are laminated on the first base substrate. A surface of the diffuse reflection layer proximal to the first planarization layer is a reflection surface that has a plurality of protrusion structures, the protrusion structures are configured to diffusely reflect light irradiated on the reflection surface. Based on this structure, the first planarization layer may separate the protrusion structure from the liquid crystal layer to prevent the protrusion structure from affecting the driving effect of the liquid crystal layer. In this way, the problem in the related art regarding the poor display effect of the display panel is solved and thus the display effect of the display panel is improved.

A thin film transistor substrate is provided, which comprises a substrate, a first thin film transistor on the substrate, and a second thin film transistor on the substrate, wherein the first thin film transistor includes a first active layer having a first channel portion, a first gate insulating layer on the first active layer, a first gate electrode on the first gate insulating layer, a first source electrode connected to the first active layer, and a first drain electrode spaced apart from the first source electrode and connected to the first active layer, the second thin film transistor includes a conductive material layer on the substrate, a first buffer layer on the conductive material layer, a second active layer having a second channel portion on the first buffer layer, a second gate insulating layer on the second active layer, a second gate electrode on the second gate insulating layer, a second source electrode connected to the second active layer, and a second drain electrode spaced apart from the second source electrode and connected to the second active layer, and the conductive material layer is connected to the second source electrode and overlaps the second channel portion. Also, a display device comprising the thin film transistor substrate is provided.

The object of the present invention is to make it possible to form an LTPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes a substrate having a display region in which pixels are formed. The pixel includes a first TFT using an oxide semiconductor 109. An oxide film 110 as an insulating material is formed on the oxide semiconductor 109. A gate electrode 111 is formed on the oxide film 110. A first electrode 115 is connected to a drain of the first. TFT via a first through hole formed in the oxide film 110. A second electrode 116 is connected to a source of the first TFT via a second through hole formed in the oxide film 110.

A display substrate, a display apparatus, and a manufacturing method of the display substrate are provided. The display substrate includes: a base substrate; and a crystallization induction layer and a polysilicon layer stacked on the base substrate. The crystallization induction layer includes induction layer patterns and intervals between the induction layer patterns. The polysilicon layer includes a portion overlapping the induction layer patterns and a portion overlapping the intervals, a crystallinity of the portion of the polysilicon layer overlapping the induction layer patterns is larger than a crystallinity of the portion of the polysilicon layer overlapping the intervals.

A display device, includes: a pixel connected to a scan line and a data line crossing the scan line, wherein the pixel includes a light emitting element, a driving transistor configured to control a driving current supplied to the light emitting element according to a data voltage received from the data line, and a first switching transistor configured to apply the data voltage of the data line to the driving transistor according to a scan signal applied to the scan line; wherein the driving transistor includes a first active layer including an oxide semiconductor and a first oxide layer on the first active layer and including an oxide semiconductor; and wherein the first switching transistor includes a second active layer on the first active layer and including the same oxide semiconductor as the first oxide layer.