The present disclosure discloses an array substrate, a display device and manufacturing methods thereof. The array substrate comprises: a base, a gate metal layer, an active layer, a source/drain metal layer, and a pixel electrode layer, wherein the array substrate has a storage capacitor region; in the storage capacitor region, the gate metal layer, the active layer, the source/drain metal layer and the pixel electrode layer comprise respective patterns; wherein, the projections of the gate metal layer storage pattern, the active layer storage pattern, the source/drain metal layer storage pattern, and the pixel electrode layer storage pattern on the base at least partially overlap, and the pixel electrode layer storage pattern is electrically connected to the gate metal layer storage pattern to form a first electrode of the storage capacitor, the active layer storage pattern is electrically connected to the source/drain metal layer storage pattern to form a second electrode.

After a sputtering gas is supplied to a deposition chamber, plasma including an ion of the sputtering gas is generated in the vicinity of a target. The ion of the sputtering gas is accelerated and collides with the target, so that flat-plate particles and atoms of the target are separated from the target. The flat-plate particles are deposited with a gap therebetween so that the flat plane faces a substrate. The atom and the aggregate of the atoms separated from the target enter the gap between the deposited flat-plate particles and grow in the plane direction of the substrate to fill the gap. A film is formed over the substrate. After the deposition, heat treatment is performed at high temperature in an oxygen atmosphere, which forms an oxide with a few oxygen vacancies and high crystallinity.

The purpose of the invention is suppressing a kink phenomenon and improvoning the image quality of a display device. The display device has a TFT in a pixel. The TFT has a semiconductor layer, a first insulating layer under the semiconductor layer, a second insulating layer over the semiconductor layer, and a gate electrode facing the semiconductor layer with a gap. The gate electrode has a first gate electrode portion facing a lower surface of the semiconductor layer, a second gate electrode portion facing an upper surface of the semiconductor layer, and a third gate electrode portion facing a lateral surface of the semiconductor layer and connected to the first and second gate electrode portions. A laminated part where the first and second insulating layers are stacked is around the semiconductor layer, and a part of the laminated part is between the lateral surface and the third gate electrode portion.

Provided is a display control element which can improve a display device in driving speed. A display control element (A) includes a semiconductor layer (l) having a counter surface (p) connected to a gate line (GL), a source electrode (s) provided on a side of the semiconductor layer (l) and connected to a source line (SL), and drain electrodes (da and db) provided on the side of the semiconductor layer (l) and connected to the same pixel (P). The gate surface, the source electrode (s), and each of the drain electrodes constitute a single thin film transistor.

A display panel includes a first substrate, an upper capacitor electrode, a capacitor dielectric layer, a second substrate opposite to the first substrate, a conductive bump, an electroluminescent layer, and a counter electrode. The upper capacitor electrode is disposed on an inner surface of the second substrate. The upper capacitor electrode is disposed on an inner surface of the second substrate. The capacitor dielectric layer covers the upper capacitor electrode of the second substrate. The first substrate has at least one pixel electrode and a first capacitor electrode separated from the pixel electrode. The conductive bump is protrusively disposed on the first capacitor electrode of the first substrate. The electroluminescent layer is sandwiched between the pixel electrode and the counter electrode.

A thin film transistor (TFT) substrate and a display device using the same are disclosed. The TFT substrate includes a first TFT including a polycrystalline semiconductor layer, a first gate electrode, a first source electrode, and a first drain electrode deposited on a substrate, a second TFT separated from the first TFT, the second TFT including a second gate electrode, an oxide semiconductor layer, a second source electrode, and a second drain electrode deposited on the first gate electrode, and a plurality of storage capacitors separated from the first and second TFTs, each storage capacitor including a first dummy semiconductor layer, a first gate insulating layer on the first dummy semiconductor layer, a first dummy gate electrode on the first gate insulating layer, and an intermediate insulating layer on the first dummy gate electrode.

A semiconductor device that is suitable for miniaturization and higher density is provided. A semiconductor device includes a first transistor over a semiconductor substrate, a second transistor including an oxide semiconductor over the first transistor, and a capacitor over the second transistor. The capacitor includes a first conductor, a second conductor, and an insulator. The second conductor covers a side surface of the first conductor with an insulator provided therebetween.

An organic light emitting display device includes a driving TFT on the substrate, a switching TFT on the substrate, and an organic light emitting diode. The driving TFT includes a first active layer formed of poly-Si, and at least a first part of an interlayer insulation layer on the first active layer. The interlayer insulation layer is formed of a first material including hydrogen. The switching TFT includes a second active layer, at least a second part of the interlayer insulation layer between the first active layer and the second active layer, and at least a part of a gate insulation layer between the second part of the interlayer insulation layer and the second active layer. The gate insulation layer is formed from a second material different from the first material and blocking diffusion of hydrogen from the interlayer insulation layer to the second active layer.

A liquid-crystal display including: a gate line extending in a first direction; a gate electrode protruding from the gate line; a gate insulating layer arranged on the gate electrode; an active layer arranged on the gate insulating layer while being insulated from the gate electrode; a data line arranged on the active layer and extending in a second direction; a source electrode protruding from the data line, having a portion overlapping the gate electrode on a plane, and including a plurality of source electrode branches that are separate from each other; a drain electrode being separate from the source electrode, and including a plurality of drain electrode branches, each being arranged between two of the plurality of source electrode branches, and a drain electrode connecting part connecting the plurality of drain electrode branches; a pixel electrode defining a pixel region; a liquid-crystal layer arranged on the pixel electrode.

An electro-optical device includes one or more control lines that include a scanning line, a data line and a pixel circuit. The pixel circuit has a drive transistor, a write-in transistor with a gate which is electrically connected to the scanning line, a light-emitting element that emits light at a brightness that depends on the size of a current that is supplied through the drive transistor, and a control line which overlaps the gate of the drive transistor when viewed from a direction that is perpendicular to a surface of a substrate on which the pixel circuit is formed is included in the one or more control lines.