[Problem] There is provided a solid-state image pickup device and an electronic apparatus, which are capable of using a substrate other than a {100} substrate while suppressing the problem of substrates other than the {100} substrate.

[Means of Solution] The solid-state image pickup device in the present disclosure includes a first substrate that is a substrate other than a {100} substrate; a photoelectric conversion unit that is provided in the first substrate; a lens that is provided above the first substrate; one or more substrates that are provided below the first substrate and have a crystal plane different from a crystal plane of the first substrate; and a transistor that is provided on an upper surface or a lower surface of one of the one or more substrates and is included in a source follower circuit.

The present specification provides a detector for an X-ray imaging system. The detector includes at least one high resolution layer having high resolution wavelength-shifting optical fibers, each fiber occupying a distinct region of the detector, at least one low resolution layer with low resolution regions, and a single segmented multi-channel photo-multiplier tube for coupling signals obtained from the high resolution fibers and the low resolution regions.

A semiconductor device includes a device feature. The semiconductor device includes a first silicide layer having a first metal, wherein the first silicide layer is embedded in the device feature. The semiconductor device includes a second silicide layer having a second metal, wherein the second silicide layer, disposed above the device feature, comprises a first portion directly contacting the first silicide layer. The first metal is different from the second metal.

A device for luminescent imaging includes an array of imaging pixels, a photonic structure over the array of imaging pixels, and an array of features over the photonic structure. A first feature of the array of features is over a first pixel of the array of imaging pixels, and a second feature of the array of features is over the first pixel and spatially displaced from the first feature. A first luminophore is within or over the first feature, and a second luminophore is within or over the second feature. The device includes a radiation source to generate first photons having a first characteristic at a first time, and generate second photons having a second characteristic at a second time. The first pixel selectively receives luminescence emitted by the first and second luminophores responsive to the first photons at the first time and second photons at the second time, respectively.

A front-side type image sensor may include a substrate successively including: a P− type doped semiconducting support substrate, an electrically insulating layer and a semiconducting active layer, and a matrix array of photodiodes in the active layer of the substrate. The substrate may include, between the support substrate and the electrically insulating layer, a P+ type doped semiconducting epitaxial layer.

A solid-state imaging device includes a plurality of pixels, each of the plurality of pixels including a photoelectric converter. The photoelectric converter includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type provided under the first semiconductor region, and a third semiconductor region of the first conductivity type provided under the second semiconductor region. The second semiconductor region has a first end portion and a second end portion opposing to the first end portion. The third semiconductor region has a first region and a second region overlapping with the second semiconductor region in a plan view, and the first region and the second region are spaced apart from each other from a part of the first end portion to a part of the second end portion.

A method for forming a pixel includes forming, in a semiconductor substrate, a wide trench having an upper depth with respect to a planar top surface of the semiconductor substrate. The method also includes ion-implanting a floating-diffusion region between the planar top surface and a junction depth in the semiconductor substrate. In a cross-sectional plane perpendicular to the planar top surface, the floating-diffusion region has (i) an upper width between the planar top surface and the upper depth, and (ii) between the upper depth and the junction depth, a lower width that exceeds the upper width. Part of the floating-diffusion region is beneath the wide trench and between the upper depth and the junction depth.

Alignment accuracy between an imaging element and a filming lens is improved. An imaging apparatus includes an imaging element, a wiring substrate, a sealing section, and fitting sections. The imaging element includes an imaging chip and pads. A light transmission section that transmits incident light is arranged on the imaging chip, and the imaging chip generates an image signal on the basis of the incident light that has transmitted through the light transmission section. The pads are arranged on a bottom surface of the imaging chip which is a surface different from the surface on which the light transmission section is arranged and convey the generated image signal. The wiring substrate includes wiring that is connected to the pads, and the imaging element is arranged on a front surface of the wiring substrate. The sealing section is arranged adjacent to side surfaces of the imaging chip which are the surfaces adjacent to the bottom surface of the imaging chip and seals the imaging chip. The fitting sections are arranged in the sealing section, and part of a lens unit for forming an optical image on the imaging element is fitted into the fitting sections.

Provided is a beam steering apparatus including a driving pixel unit including a plurality of driving pixels that are respectively configured to supply a voltage or a current, a light modulator including a plurality of pixels corresponding to the plurality of driving pixels, each pixel of the plurality of pixels being configured to modulate incident light, and a wiring layer including a wiring structure configured to electrically connect the plurality of driving pixels to the plurality of pixels, wherein the wiring structure includes a first conductive wire connected to the plurality of driving pixels, a second conductive wire connected to the plurality of pixels, and at least one third conductive wire connected between the first conductive wire and the second conductive wire, and wherein the first conductive wire, the second conductive wire, and the at least one third conductive wire form a step structure.

To provide an imaging device that allows miniaturization to be achieved in an in-plane direction without impairing operation performance. This imaging device includes a first pixel and a second pixel. The first pixel includes m (m represents an integer greater than or equal to 2) first wiring lines and m first gate electrodes that are coupled to the m respective first wiring lines. The second pixel includes n (n represents a natural number smaller than m) second wiring lines and n second gate electrodes that are coupled to the n respective second wiring lines.