A stack including at least a semiconductor drift layer stacked on a single-crystal diamond substrate having a coalescence boundary, wherein the coalescence boundary of the single-crystal diamond substrate is a region that exhibits, in a Raman spectrum at a laser excitation wavelength of 785 nm, a full width at half maximum of a peak near 1332 cm.sup.−1 due to diamond that is observed to be broader than a full width at half maximum of the peak exhibited by a region different from the coalescence boundary, the coalescence boundary has a width of 200 μm or more, and the semiconductor drift layer is stacked on at least the coalescence boundary.

In one embodiment, a semiconductor device includes a first substrate with a transistor formed in a first active are, a first bonding pad electrically connected to the transistor and a first metal pad surrounding the first active area. A second substrate of a type that is different from the first substrate includes a passive circuit element in a second active area on a front surface, a second bonding pad electrically connected to the passive circuit element, a second metal pad surrounding the second active area, and a mounting pad on a back surface of the second substrate with a through-via electrically connecting the second bonding pad to the mounting pad. A first interconnection extends from the first bonding pad to the second bonding pad, and a second interconnection extends from the first metal pad to the second metal pad and surrounds the region through which the first interconnection extends.

A diamond and a preparation method and use. The method for preparing diamond comprises: processing a substrate material of a substrate holder to obtain a surface that is easily separated from diamond films using a plasma chemical vapor deposition method to form a diamond film layer on the surface of the substrate holder, wherein the plasma chemical vapor deposition uses a multi-energy sources coupled plasma; post-processing the diamond film layer to remove impurity material on the diamond surface and a nucleation layer and/or stress layer with inconsistent properties of a main body of the diamond film. The method has the advantages of controllable thickness, controllable quality, controllable cost, etc., and lays the foundation for diamond in the fields of cutting tools and heat sinks.

A doped diamond semiconductor and method of production using a laser is disclosed herein. As disclosed, a dopant and/or a diamond or sapphire seed material may be added to a graphite based ablative layer positioned below a confinement layer, the ablative layer also being graphite based and positioned above a backing layer, to promote formation of diamond particles having desirable semiconductor properties via the action of a laser beam upon the ablative layer. Dopants may be incorporated into the process to activate the reaction sought to produce a material useful in production of a doped semiconductor or a doped conductor suitable for the purpose of modulating the electrical, thermal or quantum properties of the material produced. As disclosed, the diamond particles formed by either the machine or method of confined pulsed laser deposition disclosed may be arranged as semiconductors, electrical components, thermal components, quantum components and/or integrated circuits.

In certain examples, methods and semiconductor structures are directed to a method comprising steps of forming by monolithically integrating or seeding via polycrystalline diamond (PCD) particles on a GaN-based layer characterized as including GaN in at least a surface region of the GaN-based layer. After the step of seeding, the PCD particles are grown under a selected pressure to form a diamond layer section and to provide a semi-conductive structure that includes the diamond layer section integrated on or against the surface region of the GaN-based layer.

A semiconductor device includes a semiconductor substrate in which a first region having a freewheeling diode arranged therein, second regions having an IGBT arranged therein, and a withstand-voltage retention region surrounding the first region and the second regions in plan view are defined. The semiconductor substrate has a first main surface and a second main surface. The semiconductor substrate includes an anode layer having a first conductivity type, which is arranged in the first main surface of the first region, and a diffusion layer having the first conductivity type, which is arranged in the first main surface of the withstand-voltage retention region adjacently to the anode layer. A first trench is arranged in the first main surface on a side of the anode layer with respect to a boundary between the anode layer and the diffusion layer.

An electronic device, and method of producing an electronic device, are disclosed. The electronic device comprises a diamond substrate 10. Within the substrate 10 is an electrode 12, known as a ‘buried electrode’. A first surface 14 of the substrate 10 is provided with a conductive contact region 16. The electrode 12 is electrically connected to the contact region 16 by a conductive pillar 18. The electrode, conductive pillar, and contact region comprise modified portions of the diamond substrate, for example comprising at least one of graphitic carbon, amorphous carbon, and a combination of SP2 and SP3 phases of carbon, formed from a portion of diamond substrate.

A method includes orienting a silicon carbide layer to a first crystal channel direction relative to a first ion beam and implanting phosphorous into the silicon carbide layer using the first ion beam to define a first doped region in the silicon carbide layer. A deviation angle between the first crystal channel direction and the first ion beam is less than ±1° and the first crystal channel direction comprises a <0001> direction or a <11-23> direction.

Disclosed herein is a new and improved system and method for fabricating diamond semiconductors. The method may include the steps of selecting a diamond semiconductor material having a surface, exposing the surface to a source gas in an etching chamber, forming a carbide interface contact layer on the surface; and forming a metal layer on the interface layer.

According to the disclosure, a semiconductor device includes a semiconductor substrate including an IGBT region and a diode region, a first electrode provided on an upper surface of the semiconductor substrate and a second electrode provided on a back surface of the semiconductor substrate, wherein the diode region includes an n-type drift layer, a p-type anode layer provided on an upper surface side of the drift layer, and an n-type cathode layer provided on a back surface side of the drift layer, a lifetime control region having crystal defect density higher than crystal defect density of other portions of the drift layer and including protons is provided on a back surface side relative to a center in a thickness direction of the semiconductor substrate among the drift layer, and a maximum value of donor concentration of the lifetime control region is equal to or less than 1.0×10.sup.15/cm.sup.3.