A selector device may include a first electrode, a tunneling layer, and a ferroelectric layer. The tunneling layer may be between the first electrode and the ferroelectric layer, and a thickness and dielectric constant of the tunneling layer relative to a thickness and dielectric constant of the ferroelectric layer may cause a depolarizing electric field induced in the first tunneling layer to be greater than or approximately equal to an electric field induced in an opposite direction by ferroelectric dipoles in the ferroelectric layer when a voltage is applied across the selector device. The device may also include a second electrode, and the ferroelectric layer may be between the tunneling layer and the second electrode. A seconding layer may also be added between the ferroelectric layer and the second electrode for bipolar selectors.

The present disclosure provides a resonant tunneling diode including: a first barrier layer; a second barrier layer; a potential well layer between the first barrier layer and the second barrier layer, materials of the first barrier layer, the second barrier layer, and the potential well layer including a group III nitride, a material of the potential well layer including a gallium element; a first barrier layer between the first barrier layer and the potential well layer; and/or a second barrier layer between the second barrier layer and the potential well layer.

A selector device may include a first electrode, a tunneling layer, and a ferroelectric layer. The tunneling layer may be between the first electrode and the ferroelectric layer, and a thickness and dielectric constant of the tunneling layer relative to a thickness and dielectric constant of the ferroelectric layer may cause a depolarizing electric field induced in the first tunneling layer to be greater than or approximately equal to an electric field induced in an opposite direction by ferroelectric dipoles in the ferroelectric layer when a voltage is applied across the selector device. The device may also include a second electrode, and the ferroelectric layer may be between the tunneling layer and the second electrode. A second ing layer may also be added between the ferroelectric layer and the second electrode for bipolar selectors.

A selector device may include a first electrode, a tunneling layer, and a ferroelectric layer. The tunneling layer may be between the first electrode and the ferroelectric layer, and a thickness and dielectric constant of the tunneling layer relative to a thickness and dielectric constant of the ferroelectric layer may cause a depolarizing electric field induced in the first tunneling layer to be greater than or approximately equal to an electric field induced in an opposite direction by ferroelectric dipoles in the ferroelectric layer when a voltage is applied across the selector device. The device may also include a second electrode, and the ferroelectric layer may be between the tunneling layer and the second electrode. A second ing layer may also be added between the ferroelectric layer and the second electrode for bipolar selectors.

A selector device may include a first electrode, a tunneling layer, and a ferroelectric layer. The tunneling layer may be between the first electrode and the ferroelectric layer, and a thickness and dielectric constant of the tunneling layer relative to a thickness and dielectric constant of the ferroelectric layer may cause a depolarizing electric field induced in the first tunneling layer to be greater than or approximately equal to an electric field induced in an opposite direction by ferroelectric dipoles in the ferroelectric layer when a voltage is applied across the selector device. The device may also include a second electrode, and the ferroelectric layer may be between the tunneling layer and the second electrode. A second ing layer may also be added between the ferroelectric layer and the second electrode for bipolar selectors.

The present invention relates to a voltage-controllable capacitor comprising a first electrode layer (4) composed of a non-ferroelectric material, said first electrode layer being applied on a substrate (6), a ferroelectric interlayer (3) having a thickness that is less than the thickness of the first electrode layer (4), and a second electrode layer (2) composed of a non-ferroelectric material. The ferroelectric interlayer (3) is arranged between the first electrode layer (4) and the second electrode layer (2).

A low specific on-resistance (R.sub.on,sp) power semiconductor device includes a power device and a transient voltage suppressor (TVS); wherein the power device comprises a gate electrode, a drain electrode, a bulk electrode, a source electrode and a parasitic body diode, the bulk electrode and the source electrode are shorted, the TVS comprises an anode electrode and a cathode electrode, the drain electrode of the power device and the anode electrode of the TVS are connected by a first metal to form a high-voltage terminal electrode, the source electrode of the power device and the cathode electrode of the TVS are connected by a second metal to form a low-voltage terminal electrode.

An object of the present invention is to provide a terahertz oscillator that does not have an MIM capacitor structure of which producing is intricacy, and oscillates due to resonance of an RTD and stabilizing resistors. The present invention is a terahertz oscillator, wherein a slot antenna having a slot is formed between a first electrode plate and a second electrode plate which are applied a bias voltage, stabilizing resistors to respectively connect to the first electrode plate and the second electrode plate are provided in the slot, an RTD is provided on the second electrode plate through a mesa, and a conductive material member to form an air bridge between the first electrode plate and the mesa is provided, and wherein an oscillation in a terahertz frequency band is obtained due to a resonance of the RTD and the stabilizing resistors.

A semiconductor device capable of obtaining the threshold voltage of a transistor is provided. The semiconductor device includes a first transistor, a first capacitor, a first output terminal, a first switch, and a second switch. A gate and a source of the first transistor are electrically connected to each other. A first terminal of the first capacitor is electrically connected to the source. A second terminal and the first output terminal of the first capacitor are electrically connected to a back gate of the first transistor. The first switch controls input of a first voltage to the back gate. A second voltage is input to a drain of the first transistor. The second switch controls input of a third voltage to the source.

The present invention relates to a voltage-controllable capacitor comprising a first electrode layer (4) composed of a non-ferroelectric material, said first electrode layer being applied on a substrate (6), a ferroelectric interlayer (3) having a thickness that is less than the thickness of the first electrode layer (4), and a second electrode layer (2) composed of a non-ferroelectric material. The ferroelectric interlayer (3) is arranged between the first electrode layer (4) and the second electrode layer (2).